MACH ZEHNDER driver
Abstract: "InP HBT"
Text: SDA-3000 GaAs Distributed Amplifier SDA-3000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.100mmx1.450mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET 3 InGaP HBT Si BiCMOS Si CMOS
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SDA-3000
100mmx1
450mmx0
102mm
24GHz
SDA-3000
DS090603
MACH ZEHNDER driver
"InP HBT"
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FMS2020-001
Abstract: MIL-HDBK-263 35DBM
Text: FMS2020-001 FMS2020-001 10W GaAs Wideband SPDT Switch 10W GaAs WIDEBAND SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features GaAs HBT V2 V1 GaAs MESFET SiGe BiCMOS RF1 Si BiCMOS DE InGaP HBT RF2 SiGe HBT GaAs pHEMT
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FMS2020-001
35dBm
FMS2020-001SR
FMS2020-001SQ
FMS2020-001SB
FMS2020-001-EB
DS100122
FMS2020-001
MIL-HDBK-263
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GaAs MESFET amplifier
Abstract: SDA-5000 SDA5000 sda 5000 SDA-5000 GaAs Distributed Amplifier RFMD microwave amplifier RFMD microwave amplifier hbt 10GHZ GAAS
Text: SDA-5000 GaAs Distributed Amplifier SDA-5000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 2.2mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features Optimum Technology Matching Applied 3 GaAs HBT GaAs MESFET 4 OUT VG2 2 InGaP HBT IN 1 SiGe BiCMOS
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SDA-5000
45mmx0
102mm
35GHz
SDA-5000
18dBm
100mA
DS090603
GaAs MESFET amplifier
SDA5000
sda 5000
SDA-5000 GaAs Distributed Amplifier
RFMD microwave amplifier
RFMD microwave amplifier hbt
10GHZ GAAS
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RT4350
Abstract: FMS2016-005
Text: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS
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FMS2016-005
FMS2016-005
FMS2016-005SR
FMS2016-005SQ
FMS2016-005SB
FMS2016-005-EB
J-STD-020,
DS090608
RT4350
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Untitled
Abstract: No abstract text available
Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS
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FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001SB
FMS2016-001-EB
DS100125
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FMS2014QFN
Abstract: No abstract text available
Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET InGaP HBT V2 DE V1 SiGe BiCMOS
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FMS2014-001
FMS2014-001
DS100125
FMS2014-001SR
FMS2014-001SQ
FMS2014-001SB
FMS2014-001-EB
FMS2014QFN
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cf sot-363
Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Text: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
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OT-363
SCT-598
cf sot-363
GaAs FET cfy 14
GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343
cfy 14
121B
801C
SCT-595
CFY30
TSSOP-10-2
CFY 18
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GaAs pHEMT LOW SOT-343
Abstract: CLY 2
Text: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
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OT-363
VQFN-16-2
SCT-598
GaAs pHEMT LOW SOT-343
CLY 2
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Untitled
Abstract: No abstract text available
Text: R2005240 R2005240 Low Current 5MHz to 200MHz Si REVERSE HYBRID (LOW CURRENT) 3NOT FOR NEW DESIGNS Package: SOT-115J Product Description Features GaAs HBT GaAs MESFET InGaP HBT INPUT OUTPUT NE W Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS
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R2005240
200MHz
OT-115J
R2005240
DS130415
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Curtice
Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Text: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the
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AN1023
sam13-106.
Curtice
fet curtice nonlinear model
fet curtice
LAMBDA alpha 400
NE33200
FET model
NE71300
Alpha 1000 GaAsFET
pspice
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Untitled
Abstract: No abstract text available
Text: SGA9289Z SGA9289Z Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features Matching Applied GaAs HBT Typical Gmax, OIP3, P1dB @ 5V,270mA GaAs MESFET 23 21 Si BiCMOS GaAs pHEMT Si CMOS 38 17 13 11 Si BJT 7 5 InP HBT
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SGA9289Z
OT-89
SGA9289Z
DS140313
SGA9289ZSQ
SGA9289ZSR
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mmic distributed amplifier
Abstract: modulator driver mach zehnder mach zehnder
Text: SDA-2000 GaAs Distributed Amplifier SDA-2000 Preliminary GaAs DISTRIBUTED AMPLIFIER Die: 3.1mmx1.45mmx0.102mm CONFIDENTIAL: NDA REQUIRED Product Description Features GaAs HBT 3 InGaP HBT IN 1 9 GaAs pHEMT Si CMOS 5 7 6 VTI Si BJT ID EN TI AL :N DA Si BiCMOS
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SDA-2000
45mmx0
102mm
10GHz
410mA
DS090602
mmic distributed amplifier
modulator driver mach zehnder
mach zehnder
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AG101
Abstract: No abstract text available
Text: The Communications Edge TM Application Note Product Information AG101 Temperature Effects on Reliability The AG101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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AG101
beh1000
1-800-WJ1-4401
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wj 75
Abstract: AG101 power amplifier mmic
Text: The Communications Edge TM Application Note Product Information AM1 Temperature Effects on Reliability The AM1 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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1-800-WJ1-4401
wj 75
AG101
power amplifier mmic
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NE6500379A
Abstract: NE6500379A-T1
Text: DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
NE6500379A-T1
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CFA0301-A
Abstract: CF003-01 CFB0301-B CFB0301
Text: GaAs MESFET Transistor CF003-01 July 2008 - Rev 15-Jul-08 Features High Gain: 8 dB at 12 GHz P1dB Power: 22 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-01 GaAs-based transistor is a 600 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF003-01
15-Jul-08
CF003-01
CF003-01-000X
CFA0301-A
CFB0301-B
CFB0301
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AH101
Abstract: wj 75 AG101 AH102 AH11 Characteristic of mesfet mmic ah1
Text: The Communications Edge TM Application Note Product Information AH101 Temperature Effects on Reliability AH102 Included by Similarity The AH101 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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AH101
AH102
1-800-WJ1-4401
wj 75
AG101
AH11
Characteristic of mesfet
mmic ah1
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wj 75
Abstract: c 596 AG101 AH11 AH22 AH1-1
Text: The Communications Edge TM Application Note Product Information AH11 Temperature Effects on Reliability AH22 Included by Similarity The AH11 is a GaAs MESFET MMIC amplifier based on GaAs processes and technology that have been incorporated into WJ’s products for more than 15 years. Extensive life testing and field history of our GaAs
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de1000
1-800-WJ1-4401
wj 75
c 596
AG101
AH11
AH22
AH1-1
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Untitled
Abstract: No abstract text available
Text: S510065-55Z S510065-55Z CATV Out-OfBand Tuner CATV OUT-OF-BAND TUNER Package: QFN 28 Product Description Features 28 GaAs HBT GaAs MESFET GND InGaP HBT NC SiGe BiCMOS NC Si BiCMOS SiGe HBT GND GaAs pHEMT GND Si CMOS Vdd Si BJT GND GaN HEMT 27 26 25 24
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S510065-55Z
S510065
DS140120
S51006555ZSB
S51006555ZSQ
25pcs
S51006555ZSR
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CF001-01
Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF001-01
15-Mar-08
CF001-01
CF001-01-000X
CFB0101
CFB0101B
CFA0101A
CF001
GaAs MESFET
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GaAs MESFET
Abstract: mesfet
Text: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .
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AFM06P2-000)
AFM08P2-000)
GaAs MESFET
mesfet
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It
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NES1821P-30
NES1821P-30
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GaAs MESFET
Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Text: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .
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DC-18
MA01801
GaAs MESFET
SPDT FETs
MMIC
ALPHA spdt Switch
GaAs MESFET amplifier
GHz Power FET
GaAs MMIC SPDT Switch
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Untitled
Abstract: No abstract text available
Text: DATA SHEET_ N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power CW with high
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NE6500379A
NE6500379A
NE6500379A-T1
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