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    GAL Gate Array Logic

    Abstract: GAL20V6
    Text: GAL20V8 3 National Semiconductor GAL20V8 Generic Array Logic General Description The NSC E^CMOStm GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable


    OCR Scan     		PDF GAL20V8 GAL20V8 24-pin GAL20V8; 28-lead GAL Gate Array Logic GAL20V6

    gal programming algorithm

    Abstract: 16L6 18L4 20L8 GAL20V8 GAL20V8A GAL20V8A-10 GAL20Vb
    Text: GAL20V8A-10, -12, -15, -20 Generic Array Logic General Description Features The NSC E2CMOS GAL device combines a high per­ formance CMOS process with electrically erasable floating gate technology. This programmable memory technology applied to array logic provides designers with reconfigurable


    OCR Scan     		PDF GAL20V8A-10, 24-pin GAL20V8A GAL20V8A; 26-lead gal programming algorithm 16L6 18L4 20L8 GAL20V8 GAL20V8A-10 GAL20Vb

    GAL20V8QS-15LNC

    Abstract: IC 2576 5.0v gal20v8qs GAL programming Guide manufacturers electrical diagram to a low voltage security diagram GAL programming opal
    Text: National Semiconductor GAL20V8QS-10L, -15L 24-Pin 0.8ju EECMOS PLDs General Description Features T h e EECM OS G A L20V8Q S devices are fabricated using N atio n a l’s C S80BEV 0.8/x E lectrically E rasable CM O S pro­ cess. This advanced p rocess m akes


    OCR Scan     		PDF GAL20V8QS-10L, 24-Pin GAL20V8QS CS80BEV Cep-01451. GAL20V8QS-15LNC IC 2576 5.0v GAL programming Guide manufacturers electrical diagram to a low voltage security diagram GAL programming opal