GAN 100 WATT Search Results

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96100F2

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

40VPulse

Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

CGHV96100F1

Abstract: taconic
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison

GaN 100 watt

Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

GaN 100 watt

Abstract: TGF2023-20 GaN matching 100 watt
Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC

TGF2023-20

Abstract: s32p
Contextual Info: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz 50 dBm Nominal Psat 55% Maximum PAE 8.5 dB Nominal Power Gain Bias: Vd = 28 - 35 V, Idq = 2 A, Vg = -3.6 V Typical Technology: 0.25 um Power GaN on SiC

2735GN-100

Abstract: transistor 3,5Ghz, power 100w s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ power transistor gan s-band
Contextual Info: 2735GN-100 Rev 1 2735GN – 100M 100 Watts - 60 Volts, 300 s, 10% 2700 - 3500 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2735GN-100 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

Contextual Info: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

Contextual Info: 2729GN-500V 500 Watts - 50 Volts, 100 us, 10% S-Band Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-500V is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 11.2 dB

Contextual Info: TGS2355-SM 0.5-6 GHz 100 Watt GaN Switch Applications • • • • • • Commercial and Military Radar Communications Electronic Warfare Test Instruments General Purpose High Power Switching Product Features • • • • • • • • • Functional Block Diagram

Contextual Info: 2729GN-400 Rev 1 2729GN-400 400 Watts - 65 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 2729GN-400 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 11dB gain, 400 Watts

circuit diagram board

Abstract: 55-QP
Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

Contextual Info: 2729GN-150 Rev 1 2729GN – 150 150 Watts - 60 Volts, 100 µs, 10% Radar 2700 - 2900 MHz CASE OUTLINE 55-QP Common Source GENERAL DESCRIPTION The 2729GN-150 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 13dB gain, 150 Watts of pulsed RF

j372

Abstract: radar circuit 2729GN J294 power transistor gan s-band 2729GN-270 J340
Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

nptb00004

Abstract: NPTB00004DT NPTB00004D 250v m1 APP-NPTB00004-25 NPTB00004DR NBD-012 0J100 j105 250v j105100
Contextual Info: NPTB00004 Datasheet Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz

PIMD3

Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz

PIMD3

Contextual Info: NPTB00004 Gallium Nitride 28V, 5W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, W-CDMA, LTE, and other applications from DC to 6GHz • 100% RF Tested at 2500MHz

Contextual Info: TGS2355 0.5-6 GHz High Power GaN Switch Applications • High Power Switching Product Features Functional Block Diagram Frequency Range: 0.5 - 6 GHz Insertion Loss: < 1.3 dB Power Handling: 100 W Isolation: 40 dB typical Control Voltages: 0 V/-40 V from either side of

EPC2001

Abstract: EPC Gan transistor FX-93 FET MARKING QG
Contextual Info: eGaN FET DATASHEET EPC2001 EPC2001 – Enhancement Mode Power Transistor VDSS , 100 V RDS ON , 7 mW ID , 25 A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure