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onsemi NGB8206N IGBT 390V 20A 150W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206N	Tube			450	1 - 10 - 100 - 1000 $1.06 10000 $1.06	Buy Now
onsemi NGB8206NG IGBT 390V 20A 150W D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206NG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NGB8206NG		1,788		1	1 - 10 - 100 $0.59 1000 $0.49 10000 $0.44	Buy Now
Littelfuse Inc LGB8206ARI IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LGB8206ARI	Reel			800	1 - 10 - 100 - 1000 $0.81 10000 $0.76	Buy Now
TME	LGB8206ARI				1	1 $1.25 10 $1.12 100 $0.89 1000 $0.83 10000 $0.83	Get Quote
Littelfuse Inc XGB8206ATI IGBT N-CH 20A 350V D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XGB8206ATI	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc XGB8206ARI IGBT N-CH 20A 350V D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	XGB8206ARI	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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GB8206 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
418B-04 Abstract: GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206	PDF
Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D	PDF
GB8206 Abstract: NGB8206A NGB8206NG Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG	PDF
GB8206 Contextual Info: GB8206N, GB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206	PDF
8206NG Abstract: GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G Contextual Info: GB8206N Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and	Original	NGB8206N NGB8206N/D 8206NG GB8206N NGB8206N NGB8206NG NGB8206NT4 NGB8206NT4G	PDF