NGB8206AN Search Results

NGB8206AN Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NGB8206ANSL3G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206ANT4G		On Semiconductor	NGB8206 - TRANSISTOR 20 A, 390 V, N-CHANNEL IGBT, LEAD FREE, CASE 418B-04, D2PAK-3, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8
NGB8206ANTF4G		On Semiconductor	NGB8206 - TRANSISTOR IGBT, Insulated Gate BIP Transistor	Original	PDF	119.74KB	8

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Littelfuse Inc NGB8206ANT4G IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANT4G	Reel			800	1 - 10 - 100 - 1000 $0.69 10000 $0.63	Buy Now
Rochester Electronics LLC NGB8206ANT4G IGBT 390V 20A D2PAK
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DigiKey	NGB8206ANT4G	Bulk			342	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now
Littelfuse Inc NGB8206ANTF4G IGBT 390V 20A 150W D2PAK3
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DigiKey	NGB8206ANTF4G	Reel			700	1 - 10 - 100 - 1000 $1.13 10000 $1.10	Buy Now
Littelfuse Inc NGB8206ANSL3G IGBT 390V 20A 150W D2PAK3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANSL3G	Tube			50	1 - 10 - 100 $0.98 1000 $0.98 10000 $0.98	Buy Now
Rochester Electronics LLC NGB8206ANSL3G IGBT 390V 20A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NGB8206ANSL3G	Bulk			342	1 - 10 - 100 - 1000 $0.88 10000 $0.88	Buy Now

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NGB8206AN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
418B-04 Abstract: GB8206 Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D 418B-04 GB8206	PDF
Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D	PDF
GB8206 Abstract: NGB8206A NGB8206NG Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206 NGB8206A NGB8206NG	PDF
GB8206 Contextual Info: NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses	Original	NGB8206N, NGB8206AN NGB8206N/D GB8206	PDF