GCJ4360 Search Results
GCJ4360 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
2N06L
Abstract: 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos 12N05L
|
OCR Scan |
STD12N06L 12N05L 12N06L 2N06L 2N06L 11 12N06L 2N06L 13 mp10 D12N06L 2N06L mos | |
14N05
Abstract: BR03 TK14N GCJ4360
|
OCR Scan |
STK14N05 STK14N06 STK14N OT-82 OT-194 STK14N05/STK14N06 GC344 14N05 BR03 TK14N GCJ4360 | |
Contextual Info: *57 SGS-THOMSON TYPE STD8N06 STD8N06 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V < 0.25 a 8 A . TYPICAL R DS(on) = 0.21 Cl • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C • LOW GATE CHARGE |
OCR Scan |
STD8N06 O-251) O-252) O-251 O-252 | |
Contextual Info: SGS-THOMSON * 5 iL iO M iQ £ I 7 STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 . T Y P IC A L V d ss R D S(on) Id 600 V < 8a 1.9 A R D S (o n ) = 7.2 Q m ± 30V G A TE TO S O U R C E V O LT A G E R ATING . . • . . 100% A V A LA N C H E TE S TE D |
OCR Scan |
STK2NA60 | |
2N06
Abstract: 2N05 D12N05
|
OCR Scan |
STD12N05 STD12N06 O-251) O-252) O-251 O-252 2N06 2N05 D12N05 | |
Contextual Info: *57 SGS-THOMSON STD6N10 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE STD 6N 10 V dss R D S o n Id 100 V < 0 .4 5 Ü 6 A . • . . • . . ■ TYPICAL R Ds(on) = 0.35 Cl AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C |
OCR Scan |
STD6N10 O-251) O-252) O-251 O-252 | |
2N06L
Abstract: k12n06l K12N05 2N06L 13 STK12N
|
OCR Scan |
STK12N06L STK12N05L 2N06L k12n06l K12N05 2N06L 13 STK12N |