TK14N Search Results
TK14N Price and Stock
Toshiba America Electronic Components TK14N65W,S1FMOSFET N-CH 650V 13.7A TO247 |
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TK14N65W,S1F | Tube | 32 | 1 |
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TK14N65W,S1F | Tube | 16 Weeks | 30 |
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TK14N65W,S1F | 47 |
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TK14N65W,S1F | 30 | 5 |
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TK14N65W,S1F | 30 | 1 |
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Toshiba America Electronic Components TK14N65W5,S1FMOSFET N-CH 650V 13.7A TO247 |
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TK14N65W5,S1F | Tube | 1 |
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TK14N65W5,S1F | Tube | 16 Weeks | 30 |
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TK14N65W5,S1F |
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Toshiba America Electronic Components TK14N65W5,S1F(SMosfet, N-Ch, 650V, 13.7A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:13.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4.5V Rohs Compliant: Yes |Toshiba TK14N65W5,S1F(S |
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TK14N65W5,S1F(S | Bulk | 29 | 1 |
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Toshiba America Electronic Components TK14N65W,S1F(SMosfet, N-Ch, 650V, 13.7A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:13.7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V Rohs Compliant: Yes |Toshiba TK14N65W, S1F(S |
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TK14N65W,S1F(S | Bulk | 1 |
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TK14N Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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TK14N65W5,S1F |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 13.7A TO-247 | Original | 246.82KB | ||||
TK14N65W,S1F |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 13.7A TO-220 | Original | 10 |
TK14N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TK14N65W MOSFETs Silicon N-Channel MOS DTMOS TK14N65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK14N65W O-247 | |
Contextual Info: TK14N65W5 MOSFETs Silicon N-Channel MOS DTMOS TK14N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK14N65W5 O-247 | |
Contextual Info: TK14N65W MOSFETs Silicon N-Channel MOS DTMOS TK14N65W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK14N65W O-247 | |
Contextual Info: TK14N65W5 MOSFETs Silicon N-Channel MOS DTMOS TK14N65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS |
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TK14N65W5 O-247 | |
gt50jr22
Abstract: fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W
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SCE0024G gt50jr22 fast tlp785 TOSHIBA BIPOLAR POWER TRANSISTOR TK10A65D TLP152 TLP293 TPH1400ANH TK8P65W | |
14N05
Abstract: BR03 TK14N GCJ4360
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OCR Scan |
STK14N05 STK14N06 STK14N OT-82 OT-194 STK14N05/STK14N06 GC344 14N05 BR03 TK14N GCJ4360 | |
12N60FI
Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
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OCR Scan |
2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL | |
7N90FI
Abstract: 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90
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OCR Scan |
TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 TP20N 8N80F 9N80FI 4N90F y 4m TSD4M450V 5N90 |