GENERAL SEMICONDUCTOR MARKING UM SMA Search Results

Contextual Info: TOSHIBA 2SA1873 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. 2.1 ± 0.1 Small Package (Dual Type) Ih — High hpE -I o JJ Tl CO i T-; in ID O V - <o , 1 : J 1 5 + I 0 ,6 5 High Voltage and High Current

JDP2S01E

Contextual Info: TO SH IBA JDP2S01E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01E Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.

Contextual Info: TOSHIBA JDP2S01U TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01U UHF-VHF BAND RF ATTENUATOR APPLICATIONS Unit in mm Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. + 0.2 1.25-0.1 1-1 Low Capacitance

Contextual Info: TO SH IBA JDP2S01E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S01E Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: RECTIFIER marking UG 08 us1d US1A
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •

Contextual Info: TO SH IBA JDP2S04E TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE JDP2S04E Unit in mm VHF-UHF BAND RF ATTENUATOR APPLICATIONS • • Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Capacitance Ratio : CT = 0.25 pF Typ.

HP4291A

Abstract: JDP2S01T
Contextual Info: TOSHIBA JDP2S01T JDP2S01T TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm UHF-VHF BAND RF ATTENUATOR APPLICATIONS Suitable for reducing set’s size as a result from enabling highdensity mounting due to 2-pin small packages. Low Series Resistance : rs = 0.65 fl Typ.

Contextual Info: 1SV276 T O SH IB A TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE 1 S V2 7 6 Unit in mm High Capacitance Ratio : C iy /C 4 v = 2.0 Typ. Low Series Resistance : r$ = 0.22il (Typ.) Small Package MAXIMUM RATINGS (Ta = 25°C)

2SA1203

Abstract: 2SC2883
Contextual Info: TO SH IBA 2SC2883 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2883 Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • • • • Suitable for Output Stage of 3 Watts Amplifier P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package

GENERAL SEMICONDUCTOR MARKING uj sma

Abstract: GENERAL SEMICONDUCTOR MARKING UD Device Marking Code UB UD UG UJ UK UM
Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t ol V d e e d n ang e t R Ex 0.110 (2.79) 0.100 (2.54) 0.049 (1.25)

Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: GENERAL SEMICONDUCTOR us1j vishay MARKING UM SMA
Contextual Info: US1A thru US1M Vishay Semiconductors formerly General Semiconductor Surface Mount Ultrafast Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.0A DO-214AC SMA Cathode Band 0.065 (1.65) e g a t l o V d e d n nge e t x E Ra 0.110 (2.79) 0.100 (2.54)

Contextual Info: TOSHIBA 1SS388 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 s S 3 88 HIGH SPEED SWITCHING APPLICATION U nit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (Typ.) • Low Reverse Current : I r = 5/./Á (Typ.) MAXIMUM RATINGS (Ta = 25°C)

GENERAL SEMICONDUCTOR MARKING UJ SMA

Abstract: vishay MARKING UM SMA Device Marking Code UB UD UG UJ UK UM us1j diode us1m vishay GENERAL SEMICONDUCTOR MARKING UD GENERAL SEMICONDUCTOR us1j marking UD JESD22-B102D J-STD-002B
Contextual Info: US1A thru US1M Vishay General Semiconductor Surface Mount Ultrafast Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A trr 50 ns, 75 ns VF 1.0 V, 1.7 V Tj max. 150 °C DO-214AC (SMA) Features Mechanical Data • • •

Contextual Info: 1SV313 TOSHIBA 1 SV3 1 3 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • • SILICON EPITAXIAL PLANAR TYPE Unit in mm High Capacitance Ratio : Co 5 y / C2.5 y = 2.5 Typ. Low Series Resistance : rs = 0.35 ü, (Typ.) Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

1SV314

Contextual Info: 1SV314 TOSHIBA 1 SV3 14 TOSHIBA DIODE VCO FOR UHF BAND RADIO • • SILICON EPITAXIAL PLANAR TYPE High Capacitance Ratio • C0.5 V / c 2.5 V = 2-5 TyP- : rs = 0.35 O (Typ.) Low Series Resistance Useful for Small Size Tuner M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 1SS181 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1S S 18 1 ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm + 0.5 • Small Package : SC-59 • Low Forward Voltage : Vjr 3 = 0.92V (Typ.) • Fast Reverse RecoveryTime : • Small Total Capacitance

Contextual Info: 1SV214 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE TV TUNING. Unit in mm • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0 .4 0 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

marking 15C SMA TVS

Abstract: SMA 22a general semiconductor D Q B 91A 100A 110A 120A 130A 150A
Contextual Info: a G en era l “v 5 S e m ic o n d u c to r" P4SMA6.8Athru P4SMA220CA Surface Mount T ra n s Z o rb Transient Voltage Suppressors DO-214AC SMA Breakdown Voltage 6.8 to 220V Peak Pulse Power 400W ^ -C a th o d e Band 0. 0 6 5 ( 1.65 ) Mounting Pad Layout

2SK1829

Contextual Info: TOSHIBA 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 829 Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package

transistor 4213

Abstract: 2SC4213 SC4213
Contextual Info: 2SC4213 TO SH IBA 2SC4213 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage High Reverse hjrg • • • Low On Resistance High DC Current Gain Small Package Ve BO = 25V (Min.)

100S

Abstract: 1N4148WS BAV16WS VISHAY 1N4148WS Rev
Contextual Info: PRELIM INARY 1N4148WS / BAV16WS VISH AY SURFACE MOUNT FAST SWITCHING DIODE LITEM ZI Ì POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance H I /k B

2SK1830

Contextual Info: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT

Contextual Info: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5i2 (Typ.) MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING