Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    GENERAL SEMICONDUCTOR TRANSISTORS Search Results

    GENERAL SEMICONDUCTOR TRANSISTORS Result Highlights (5)

    Part
    ECAD Model
    Manufacturer
    Description
    Download
    Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR TRANSISTORS Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
    Text: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General


    Original
    PDF

    darlington pair transistor

    Abstract: Darlington pair AN3100 AN31001
    Text: Freescale Semiconductor Application Note AN3100 Rev. 2, 7/2008 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single


    Original
    AN3100 darlington pair transistor Darlington pair AN3100 AN31001 PDF

    darlington pair power transistor

    Abstract: AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor
    Text: Freescale Semiconductor Application Note AN3100 Rev. 0, 3/2005 General Purpose Amplifier Biasing by: Jeff Gengler Freescale Semiconductor INTRODUCTION Freescale Semiconductor’s General Purpose Amplifier GPA devices are all designed to operate from a single


    Original
    AN3100 darlington pair power transistor AN31001 current amplifier note darlington AN3100 MMG3001NT1 MMG3002NT1 MMG3003NT1 freescale power RF products darlington pair transistor PDF

    tc7pau04

    Abstract: No abstract text available
    Text: Semiconductor Catalog 2012-11 General-Purpose Logic ICs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng ▲ ▲ ▲ ▲ ▲ Toshiba General-Purpose Logic Family . Family Positioning: Supply Voltages vs Speeds .


    Original
    BCE0008J tc7pau04 PDF

    2N6388

    Abstract: 2N6387
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


    Original
    2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB PDF

    mje3055T data

    Abstract: No abstract text available
    Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general−purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes


    Original
    MJE2955T MJE3055T MJE3055T mje3055T data PDF

    2N4918

    Abstract: 2N4919 2N4920 2N4921 2N4922 2N4923
    Text: ON Semiconductor 2N4918 thru 2N4920 * Medium-Power Plastic PNP Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device 3 AMPERE GENERAL–PURPOSE


    Original
    2N4918 2N4920 2N4921, 2N4922, 2N4923 r14525 AN4918/D 2N4918 2N4919 2N4920 2N4921 2N4922 2N4923 PDF

    pnp mje2955t

    Abstract: MJE3055T MJE2955T
    Text: ON Semiconductor PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *ON Semiconductor Preferred Device • DC Current Gain Specified to 10 Amperes


    Original
    MJE2955T MJE3055T r14525 MJE2955T/D pnp mje2955t MJE3055T MJE2955T PDF

    BD241C-D

    Abstract: BD241C BD242C
    Text: ON Semiconductor Complementary Silicon Plastic Power Transistors NPN BD241C* PNP BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — • • • *ON Semiconductor Preferred Device


    Original
    BD241C* BD242C* BD241C, BD242C r14525 BD241C/D BD241C-D BD241C BD242C PDF

    BC308

    Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
    Text: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.


    Original
    BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP PDF

    smd transistor ja

    Abstract: SOIC-16 ja smd MMPQ6700
    Text: Central MMPQ6700 TM Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6700, consisting of two complementary pairs of transistors, available in the SOIC-16 surface mount package, is designed for general purpose


    Original
    MMPQ6700 MMPQ6700, SOIC-16 100MHz 100kHz smd transistor ja ja smd MMPQ6700 PDF

    2N5822

    Abstract: 2N5823 2N5820 2N5821 general purpose complementary transistors
    Text: Central 2N5820 2N5822 NPN 2N5821 2N5823 PNP TM Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5820 series types are epoxy molded complementary silicon small signal transistors manufactured by the epitaxial planar process designed for general


    Original
    2N5820 2N5822 2N5821 2N5823 O-92-18R 2N5820 2N5821 20MHz 2N5822 general purpose complementary transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. MOTOROLA Freescale Semiconductor, Inc. MC33385 SEMICONDUCTOR Automotive Quad Low Side Driver QUAD LOW SIDE DRIVER SEMICONDUCTOR TECHNICAL DATA The MC33385 is a Quad Low Side Driver fully protected switch. This device is a general purpose Low Side Driver but has been especially


    Original
    MC33385 MC33385 HSOP20 PDF

    MMPQ3904

    Abstract: SOIC-16
    Text: MMPQ3904 SURFACE MOUNT NPN SILICON QUAD TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ3904, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.


    Original
    MMPQ3904 MMPQ3904, SOIC-16 100mA 100MHz MMPQ3904 PDF

    500ma 40v pnp

    Abstract: MMPQ2907A SOIC-16
    Text: Central MMPQ2907A TM Semiconductor Corp. SURFACE MOUNT PNP SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2907A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.


    Original
    MMPQ2907A MMPQ2907A, SOIC-16 150mA 500mA 100MHz 100kHz 150mA, 500ma 40v pnp MMPQ2907A PDF

    C1q TRANSISTOR

    Abstract: CMPT5088 CMPT5089 marking code R5 sot23 marking code "R5" sot23 C1R sot23
    Text: Central CMPT5088 CMPT5089 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and


    Original
    CMPT5088 CMPT5089 CMPT5088, CMPT5089 CMPT5088: CMPT5089: OT-23 20MHz C1q TRANSISTOR CMPT5088 marking code R5 sot23 marking code "R5" sot23 C1R sot23 PDF

    p592

    Abstract: No abstract text available
    Text: Central" MMPQ6700 Semiconductor Corp. SURFACE MOUNT COMPLEMENTARY SILICON QUAD TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ6700, consisting of two complementary pairs of transis­ tors, available in the SOIC-16 surface mount package, is designed for general purpose amplifi­


    OCR Scan
    MMPQ6700 MMPQ6700, SOIC-16 14-November mmpq67oo p592 PDF

    bcy34

    Abstract: BCY31 bcy32 BCY33
    Text: CENTRAL SEMICONDUCTOR ^5 D E | Ï T f l ^ f a 3 □QQ0357~fl DESCRIPTION The CENTRAL SEMICONDUCTOR BCY30 series types are Silicon PNP Transistors manufactured by the epitaxial planar process for general purpose applications requiring low gain hpf and low leakage.


    OCR Scan
    QQ0357 BCY30 BCY31 BCY32 BCY33 BCY34 PDF

    CA3046 equivalent

    Abstract: AN5296 Harris CA3018 CA3045
    Text: CA3045, CA3046 Semiconductor September 1998 General Purpose NPN Transistor Arrays Features The CA3045 and CA3046 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to


    Original
    CA3045, CA3046 CA3045 CA3046 500MHz CA3046 equivalent AN5296 Harris CA3018 PDF

    lt 715

    Abstract: Monolithic Transistor Pair NPN Monolithic Transistor Pair J14A LM3045 LM3045J LM3046 LM3046M LM3046N LM3086
    Text: LM3045/LM3046/LM3086 National Semiconductor LM3045/LM3046/LM3086 Transistor Arrays General Description Features The LM3045, LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally


    OCR Scan
    LM3045/LM3046/LM3086 LM3045, LM3046 LM3086 LM3045 14-lead bSD1124 TL/H/7950-7 bS01124 lt 715 Monolithic Transistor Pair NPN Monolithic Transistor Pair J14A LM3045J LM3046M LM3046N PDF

    BC856

    Abstract: BC856AWT1 BC856BWT1 BC857 BC857AWT1 BC857BWT1 BC858 BC858AWT1 BC858BWT1 transistor BC557 base collector emitter
    Text: MOTOROLA Order this document by BC856AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


    Original
    BC856AWT1/D BC856AWT1 BC857AWT1 323/SC BC858AWT1 BC856 BC857 BC858 BC856AWT1/D* BC856 BC856BWT1 BC857 BC857BWT1 BC858 BC858BWT1 transistor BC557 base collector emitter PDF

    BC856

    Abstract: BC856AWT1 BC856BWT1 BC857 BC857AWT1 BC857BWT1 BC858 BC858AWT1 BC858BWT1 bc585a
    Text: MOTOROLA Order this document by BC856AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


    Original
    BC856AWT1/D BC856AWT1 BC857AWT1 323/SC BC858AWT1 BC856 BC857 BC858 BC856AWT1/D* BC856 BC856BWT1 BC857 BC857BWT1 BC858 BC858BWT1 bc585a PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort General Purpose Transistor MMBT2907AWT1 PNP Silicon ON Semiconductor Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications.


    Original
    323/SC MMBT2907AWT1 PDF

    BC847 MOTOROLA

    Abstract: BC847C MOTOROLA BC846 BC846AWT1 BC846BWT1 BC847 BC847AWT1 BC847BWT1 BC847CWT1 BC848
    Text: MOTOROLA Order this document by BC846AWT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BC846AWT1,BWT1 NPN Silicon BC847AWT1,BWT1, COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


    Original
    BC846AWT1/D BC846AWT1 BC847AWT1 323/SC BC848AWT1 BC846 BC847 BC848 BC846AWT1/D* BC847 MOTOROLA BC847C MOTOROLA BC846 BC846BWT1 BC847 BC847BWT1 BC847CWT1 BC848 PDF