2N4921 Search Results

2N4923

Abstract: 2N4922 2N4921 2N4922 npn
Contextual Info: Inchange Semiconductor Product Specification 2N4921 2N4922 2N4923 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N4918/4919/4920 ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS

2n4921 amplifier circuit

Abstract: 2N4923 2N4918 2N4919 2N4920 2N4921 2N4922
Contextual Info: ON Semiconductor 2N4921 thru 2N4923 * Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *ON Semiconductor Preferred Device • Low Saturation Voltage —

2N4923

Abstract: 2N4921 2N4922 2N4922 npn
Contextual Info: SavantIC Semiconductor Product Specification 2N4921 2N4922 2N4923 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and

2N4918

Abstract: 2N4920 2N4919
Contextual Info: SavantIC Semiconductor Product Specification 2N4918 2N4919 2N4920 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and

Contextual Info: 2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

2N4921

Abstract: LM390
Contextual Info: 2N4921 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N4921 Availability Online Store

2N4923

Abstract: 2N4922 2N4921 2N4922G 2N4921G 2N4923G N492 2N4918 2N4919 2N4920
Contextual Info: 2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

S6157

Abstract: 2N4922 2N4918 2N4919 2N4920 2N4921 2N4923
Contextual Info: • 7 c]2eì237 DDSqBCn £ Z 7 S C S -T H 0 M S 0 N m 7# S G S-THOMSON b ■ ' 7 V 2 > 3 - 0 ¿\ 2N 4918/19/20 2N 4921/22/23 3 QE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The 2N4921, 2N4922 and 2N4923 are silicon epi­ taxial planar NPN transistors in Jede TO-126 plastic

2N4923 MOTOROLA

Abstract: 2n4923r 2N4923 to.225aa 2N4921 12 volt-30 amp power diode 2N4921-D 2N4922 MOTOROLA 2N4918 2N4919
Contextual Info: MOTOROLA Order this document by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature:

Contextual Info: ON Semiconductor 2N4921 thru 2N4923 * Medium−Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high−performance plastic devices feature: *ON Semiconductor Preferred Device • Low Saturation Voltage —

2N4923

Abstract: 2N4921 2n921 2N4922 npn
Contextual Info: Datasheet Central ^ M 2N4921 2NA922 2N^923 Sem iconductor Corp. NPN S i l i c o n T r a n s is t o r G en eral Purpose Power 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

darlington bd139

Abstract: MJE222 mje520
Contextual Info: Power Transistors TO-126 Case TYPE NO. ic PD BVCBO A (W) m m BVCEO • @ le U FE (mA) Bottom View V C E (S A T ) @ 1C (V) (A) *T (MHz) MIN MIN MIN MAX 2N4921 2N4918 1.0 30 40 40 30 150 500 0.6 1.0 3.0 2N4922 2N4919 1.0 30 60 60 30 150 500 0.6 1.0 3.0 2N4923

Contextual Info: 2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

b0436

Abstract: BD139 Power Transistors TO-126 Case
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. PD A NPN PNP (W) hFf BVCBO BVCEO @ lo (mA) Bottom View VCE(SAT) @ 1C (V) (V> MIN MIN IMI MAX 30 40 40 30 150 500 0.6 1.0 MAX (A) (V) MAX fT (MHz) MIN 2N4921 2N4918 - 2N4922 2N4919- 1.0 30 60 60 30 150 500 0.6

Contextual Info: 2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • • • • • Low Saturation Voltage Excellent Power Dissipation Due to Thermopadt Construction

2N4923

Abstract: 2N4922 2N4921 2N4922 npn 2N4918 2N4919 2N4920 416W
Contextual Info: Product Specification www.jmnic.com 2N4921 2N4922 2N4923 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N4918,2N4919 2N4920 ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

BD699

Abstract: BD595 N6034 bd697 BD609 BD588 BD587 bd561 MJE34 pnp BD698
Contextual Info: N PN PN P l e = 3.0 A. 2N4921 2N4918 v C EO V olts Hf e @ 'c Am p V C E sat @ 'C V o lts Am p fT MHz PD Watts Case 40 20/100 0.5 0.6 1.0 3.0 30 77 M JE 3 1 M JE 3 2 40 25/- 1.0 1.2 3.0 3.0 40 77R BD 17 5 BD 17 6 45 15/— 1.0 0.8 1.0 3.0 30 77 BD 57 5 BD 5 7 6

2SC105

Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

Contextual Info: 2N4921 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N4922G

Abstract: 2N4923 2N4921G 2N4922 2N4922 npn 2N4918 2N4919 2N4920 2N4921 2N4923G
Contextual Info: 2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium−Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage − VCE sat = 0.6 Vdc (Max) @ IC = 1.0 A

2N4920

Abstract: 2N4918 2N4919 2N4923 2N4921 2N4922
Contextual Info: Product Specification www.jmnic.com 2N4918 2N4919 2N4920 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2N4921,2N4922 2N4923 ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS

2N4923

Abstract: 2N4921 2N4918 2N4922 2N4920 "Schematic Diagrams" 2N4922 npn 2N4919
Contextual Info: r r 7 SGS-THOMSON 2N4918/19/20 * 7 # [ « « L iE M M O S 2N4921/22/23 MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The 2N4921, 2N4922 and 2N4923 are silicon epi­ taxial planar NPN transistors in Jede TO-126 plastic package, they are intended for driver circuits, swit­

b0615

Abstract: B0180 BD139 2N5192 BD441 2N4923 2N60 2N4918 2N4919 bd679, bd680 2N4921
Contextual Info: o Top View TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO <V) (V) hFE @ Ic (mA) Bottom View VCE(SAT) @ IC (V) (A) fT (MHz) MIN MIN MIN MAX 2N4921 2N4918 1.0 30 40 40 30 150 2N4922 2N4919 1.0 30 60 60 30 150 500 0.6 1.0 3.0 2N4923 2N4920 1.0 30 80 80 30 150