GERMANIUM DIODES FORWARD DROP Search Results

Germanium Power Diodes

Abstract: BD3 tunnel diode Germanium Power Devices
Contextual Info: Germanium Power Devices Corp. r— rr— r - - -— :- Specifications BACK DIODES BDl, 2, 3, 4, 5, 6 & 7 are germanium back diodes which make use of the quantum mechanical tunneling phenomenon, thereby attaining a very low forward voltage

BKC Semiconductors

Abstract: BAT46 smd
Contextual Info: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Efficient portable systems battery isolator. Features DO-35 Glass Package Six Sigma quality

1N60P

Abstract: 1N60 diode diode 1n60 DO-35 silicon Rectifier diodes germanium rectifier diode 1N60 1N60P,Germanium, DO-35
Contextual Info: 1N60, 1N60P GERMANIUM DIODES Features • Metal silicon junction, majority carrier conduction DO-35 GLASS · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics 0.075(1.9) MAX. DIA.

BKC Semiconductors

Abstract: BAT43 SMD D0213AA D0-213AA Germanium Schottky diode
Contextual Info: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.

BKC Semiconductors

Abstract: DSAIH0002561
Contextual Info: DO-35 Glass Schottky Diode BAT43 Applications Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CD ROMs and hard disk drives.

DSAIH00025313

Contextual Info: DO-35 Glass Applications n Schottk» Diode BAT42 J Guard ring protected schottky barrier. Low forward drop. Excellent protection for MOS devices. Ideal relacement for germanium diodes. Used in small fast motor applications such as CO ROMs and hard disk drives.

DSAIH0002561

Abstract: BAT46 smd
Contextual Info: DO-35 Glass Schottky Diode BAT46 Applications Higher voltage and lower leakage. Low forward drop. More ESD protection. Ideal relacement for germanium diodes in instruments. Features • • • • • • • • DO-35 Glass Package Six Sigma quality Humidity proof glass

BKC Semiconductors

Abstract: Germanium DO-35 DIODE germanium diodes forward drop DSAIH0002561
Contextual Info: Schottky Diode I BAT42 Applications DO-35 Glass Guard ring protected schottky barrier. Low forward drop.Excellent protection for M O S devices. Ideal replacem ent for germanium diodes, used in small fast mo­ tor applications such as CD ROMs and hard disc drives. Efficient portable sys­

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 1N268 Gold Bonded Germanium Diodes in DO-7 Package FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)

diode 0a47

Abstract: DIODE OA91 OA95 diode OA90 diode oa47 diode DIODE OA90 OA91 diode OA1182 0a47 diode germanium oa95
Contextual Info: B K C INTERNATIONAL 30E D • 1 1 7 H 4 3 0000355 ? ■ x iiL lL H - d - . -pOl-OT i 6 Lake Street PO Box 1436 Lawrence. MA 01841 617)681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes TYPE G1607 FEATURES Low forward voltage drop

TY 8004

Abstract: G1607 tolol
Contextual Info: B K C INTERNATIONAL ✓•o nx-t « i 3ÛE D ■ 117^03 Q0QQ322 7 ■ " T O I- 0 7 I M /. ? f - 1 ^ I. 6 Lake Street PO Box 1436 Lawrence. MA 0184! 617 681-0392 (508) 681-0392 BK C International Electronics Inc. Gold Bond Germanium Diodes type G1607 FEATURES Low forward voltage drop

Germanium Power Diodes

Abstract: T-75 A HIGH VOLTAGE DIODES Germanium power 490mV Germanium Power Devices G40S20 430mv germanium
Contextual Info: G Germanium Power Devices Corporation * Ge Schottky Rectifier D05 High Reverse Energy/Ultra-Low Vp G40S20 PRELIMINARY SPECIFICATIONS MAXIMUM RATINGS: IF avg Average forward current rectangular waveform 40 A IFM Peak rectified forward current 50%duty cycle

1N770

Abstract: 1N910 1N911 1N695 1N695A 1N771 1N771A 1N771B gold bonded germanium diode BKC International
Contextual Info: IITT^ÛB 0DQQ333 1 3QE D B K C INTERNATIONAL [ 1 4 BKC " International Electronics Inc. L .J X i T - O 3 .-0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N695

n452 ak

Abstract: toho electronics inc 1N4537 1N454 germanium diode 0Q0017 N452 n314 1N277 1N278
Contextual Info: BKC IIT^ÔB 0000331 & • 'T-Ol -07 30E D I NTERNATI ONAL M <r 6 Lake Street PO Box 1436 Lawrence, M A USA 01841 BKC International Electronics Inc. L „ l Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N277 Low forward voltage drop

1N995

Abstract: germanium diodes forward drop 1n995 1n995 diode
Contextual Info: B K C BQE D INTERNATIONAL [ \ d BKC International \Electronics Inc. •as-07 IITTTÔB 000033b ? 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE 1N 995 Low forward voltage drop

Contextual Info: Resolution and Accuracy of Cryogenic Temperature Measurements D. Scott Holmes and S. Scott Courts Lake Shore Cryotronics, Inc., Westerville, Ohio 43081-2399 A procedure is outlined and typical data provided for calculation of achievable resolutions and accuracies using commercially

G60S15

Abstract: G60S10 Germanium power
Contextual Info: GERMANIUM POWER DEVICES 31E I • 3=147375 0000S48 S ■ E R M A N I U M PO W ER DEVICES CORP. Ge Schottky Rectifier High Reverse Energy/Ultra-Low Vp Preliminary Specifications DO-5 pkg Nov. ’90 Maximum Ratings: IF avg IFM IFSM VRWM T. JC IRRM Average Forward Current Rectangular W aveform . . 60 Amps

D3E diode

Abstract: germanium diode gold bonded germanium diode 1N3110 "Germanium diode" 1N3287 1N949 117T 1N3125 1N3287W
Contextual Info: B K C INTERNATIONAL 30E D [•■Mi BKC International Electronics Inc. L .,« il X » ■ 0DD033S 5 ■ 1- 0 1-0~7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

1N3483

Abstract: Germanium diode D3E diode 1N3469 gold bonded germanium diode 1N3470 1N34* diode 1N3592
Contextual Info: B K C INTERNATIONAL 30E D [•«Ml BKC International Electronics Inc. I-III V » ■ 117^03 GG D G 3 3 T 2. ■ -"pOI-O"/ 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 Telephone 617 681-0392 « TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES

germanium diode

Abstract: 1N4523 117T 1N3666 1N3666M1 1N3666M2 1N3769 1N3773 gold bonded germanium diode
Contextual Info: 3QE D B K C INTERNATIONAL EN§ IITTTÔB 0000340 •= ■ ¡ ■ ' ^ 0 3 - 0 7 6 Lake Street PO Box 1436 Lawrence, MA USA 01841 BKC International Electronics Inc, Telephone 617) 681-0392 • TeleFax (617) 681-9135 • Telex 928377 GOLD BONDED DIODES TYPE

2n2082

Abstract: 2N2152 2N2075 2N2076 2N2153 2N2156 2N3312 2N2079 2N2077 2N2078
Contextual Info: germanium power transistors PNP TO-36 I c max — 5 to 30A V c e o js u s j — 20 to 65V Ii f e VcEO(SUS) V ebo (Volts) (Volts) Type# @ Ic /V ce (Min-Max @ A /V ) VcEISAT) @ Ic / I b (V @ A /A ) V be @ Ic / V ce (V @ A /V ) IC EV Pd @ @ V cE (m A @ V )

Germanium Schottky diode

Abstract: CDSH-4 Germanium DO-35 DIODE 30V 200mA schottky barrier diode
Contextual Info: Data Sheet Central CDSH-2 CDSH-4 S em iconductor Corp. 145 Adam s Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SILICON SCHOTTKY BARRIER DIODE Manufacturers of World Class Discrete Semiconductors JEDEC DO-35 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR CDSH Series types are Silicon Schottky Barrier Diodes designed for

Contextual Info: GENERAL PURPOSE DIODES, C1 CAN M inim um B reakdow n P a rt Num ber V . . . V C ontinuous laxlm um A ve ra g e I l l l l f i R everse Forw ard C u rre n t C u rre n t 1. <UA) Forward Voltage Drop T .« 2 5 « C T„»1 d o ° c v* (V olts) ta |m A ) V, (V o lts)

OA47 germanium

Abstract: AA118 AA218 diode aa118 AAZ15 1N695 IN34A OA90 iN87 AA117
Contextual Info: B IC C INTERNATI ONAL 30E D • H 7 n f l 3 00003Q0 6 ■ 'T-01-0“7 Q erm anium d i o d e s B B B 3 Type AA117 AA118 AA121 M 123 M 130 AA143 AA144 AAY30 AAY32 AAY33 AAY42 AAZ13 AAZ15 AAZ17 AA218 OA47 OA90 OA180 1N34A 1N55B 1N60 1N87 1N98A 1N100A 1N270 1N276