GEX06260 Search Results

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor SFH 313 SFH 313 FA New: Silicon NPN Phototransistor .O -'“ ’ Area not flat 9.0 5.9 5.5 0.6 0.4 5.1 Chip position Cathode Diode Collector (Transistor) GEX06260 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

Contextual Info: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA CO CM Û O CO Area not flat 0.6 0 .4 Cathode (Diode Collector (Transistor) GEX06260 (O (O (O C\J Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820 OHR01882 transistor SR 51
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

GEX06260

Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)

Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 0.6 0.4 5.7 5.1 29 27 Chip position Cathode Diode Collector (Transistor) fex06260 1.8 1.2 GEX06260

Q1031

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 A re a not flat 5.9 5.5 0.4 GEX06260 Collector Transistor Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

GEX06260

Abstract: Q62702-P1671 Q62702-P930 SFH213FA 870nm
Contextual Info: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA SFH 213 SFH 213 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 213 und bei 880 nm (SFH 213 FA)

Q62702-P1667

Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 313 SFH 313 FA SFH 313 SFH 313 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 313 und bei 880 nm (SFH 313 FA) • Hohe Linearität • 5 mm-Plastikbauform

foto transistor

Abstract: OHF02331 p1752 phototransistor 500-600 nm GEX06260 Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 0.6 0.4