GT30 Search Results

Contextual Info: TOSHIBA TENTATIVE GT30J301 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm M OTOR CONTROL APPLICATIONS $3.2 ± 0.2 The 3rd Generation Enhancement-Mode High Speed : t f= 0.30/^s Max.

Contextual Info: GT30J311 TOSHIBA TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement-Mode High Speed : tf= 0.30/iS Max. Low Saturation Voltage : VQE(say = 2.7V (Max.)

Contextual Info: GT30J341 ディスクリートIGBT シリコンNチャネルIGBT GT30J341 1. 用途 • モータドライブ用 2. 特長 1 第6世代品 (2) 飽和電圧が低い: VCE(sat) = 1.5 V (標準) (IC = 30 A) (3) 接合温度が高い: Tj = 175 (最大) (4)

Contextual Info: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz

GT3020

Abstract: in 4436 MARK 2T X2C-BXXXXXXXXX 10MAY2010 Q2C-B2832AC2
Contextual Info: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide

Contextual Info: GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • Enhancement mode type • High speed: tf = 0.25 s Typ. (IC = 50A) • Low saturation voltage: VCE (sat) = 2.1V (Typ.) (IC = 50A)

Contextual Info: TOSHIBA Preliminary GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)

GT30J101

Abstract: GT30J301
Contextual Info: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT30J101 High Power Switching Applications Unit: mm • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.30 µs max • Low Saturation Voltage: VCE (sat) = 2.7 V (max)

GT30J126

Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
Contextual Info: GT30J126 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ

GT30J101

Abstract: GT30J301
Contextual Info: GT30J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications • Third-generation IGBT • Enhancement mode type • High speed: tf = 0.30 s max • Low saturation voltage: VCE (sat) = 2.7 V (max)

GT30J324

Contextual Info: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

GT30J301

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. : VCE (sat) = 2.7V (Max.)

GT30J301

Abstract: failure report IGBT
Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30 s Max. z Low saturation voltage

GT30J121

Abstract: GT30J324
Contextual Info: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

Contextual Info: GT30J311 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J311 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

GT30J322

Abstract: MARKING toshiba
Contextual Info: GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J322 FOURTH-GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Unit: mm z FRD included between emitter and collector z Enhancement mode type z High speed z Low saturation voltage

in 4436

Abstract: GT3020
Contextual Info: Technical Data Sheet Top View LEDs GT3020/X2C-BXXXXXXXXX/2T Features ․P-LCC-2 package. ․Fluorescence Type ․High Luminous Intensity ․High Efficiency ․Pb-free. ․The product itself will remain within RoHS compliant version. Descriptions ․ Due to the package design, GT3020 has wide

GT300FD060N

Contextual Info: VS-GT300FD060N www.vishay.com Vishay Semiconductors DIAP Low Profile 3-Levels Half-Bridge Inverter Stage, 300 A FEATURES • Trench plus Field Stop IGBT technology • FRED Pt antiparallel and clamping diodes • Short circuit capability • Speed 4 kHz to 30 kHz

GT30J322

Contextual Info: TOSHIBA GT30J322 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT30J322 THE 4TH GENERATION Unit in mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS • • • • FRD Included Between Emitter and Collector Enhancement-Mode High Speed

GT30J301

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. Low Saturation Voltage : VCE (sat) = 2.7V (Max.)

RKM 40

Contextual Info: Housing Style 30 mm - Nonembeddable, minifast Connection, Teflon Coated Part Number Ni20U-GT30-ADZ30X2-B1131 ID Number M4281822 Features Sen s Ran ing ge m m Inductive Sensors Output 20 2-Wire AC/DC Short-Circuit Protected 30 mm - Nonembeddable, Right Angle minifast Connection

Contextual Info: GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed : tf = 0.30µs Max. z Low saturation voltage

Contextual Info: GT30 High Thermal Conductivity Glassfiber Reinforcement Features Natural tack Smooth surface & low thermal contact resistance Exceptional thermal performance at lower application pressures 20psi~400psi Usable over a wide temperture range Simplified processing and reduced operating costs