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Catalog Datasheet	Type	Document Tags	PDF
GT602 Abstract: IGT6D21 IGT6E21 Contextual Info: Insulated-Gate Bipolar Transistors • IGT6D21, IGT6E21 F ile N um ber N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2128 TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.145 Q Features: ■ Low I/c e i s a h — 2.5V typ. @ 20A	OCR Scan	IGT6D21, IGT6E21 IGT6D21 IGT6E21 GT602	PDF

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GT602

Abstract: IGT6D21 IGT6E21
Contextual Info: Insulated-Gate Bipolar Transistors • IGT6D21, IGT6E21 F ile N um ber N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2128 TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.145 Q Features: ■ Low I/c e i s a h — 2.5V typ. @ 20A

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IGT6D21, IGT6E21 IGT6D21 IGT6E21 GT602

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