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    IGT6E21 Search Results

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    IGT6E21 Price and Stock

    Rochester Electronics LLC IGT6E21

    IGBT 500V 32A TO-247
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    DigiKey IGT6E21 Bulk 85
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    Harris Semiconductor IGT6E21

    IGT6E21
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    Verical IGT6E21 274 88
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    Rochester Electronics IGT6E21 289 1
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    IGT6E21 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    IGT6E21
    		General Electric Power Transistor Data Book 1985 Scan PDF 186.57KB 4
    IGT6E21
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 140.35KB 4
    IGT6E21
    		International Rectifier Transistor / IGBT Scan PDF 61.52KB 1

    IGT6E21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT602

    Abstract: IGT6D21 IGT6E21
    Contextual Info: Insulated-Gate Bipolar Transistors • IGT6D21, IGT6E21 F ile N um ber N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2128 TERMINAL DIAGRAM 20A, 400V and 500V Tds on = 0.145 Q Features: ■ Low I/c e i s a h — 2.5V typ. @ 20A


    OCR Scan     		IGT6D21, IGT6E21 IGT6D21 IGT6E21 GT602 PDF

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


    OCR Scan     		0QS714 O-204AA O-218AC O-220AB 2N6975 2N6977 IGTM10N40 IGTM10N40A IGTM20N40 IGTM20N40A IGT4E10 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A PDF

    IGT6D21

    Abstract: IGT6E21
    Contextual Info: IGT6D21.E21 Insulated Gate Bipolar Transistor This IG T " Transistor Insulated Gate Bipolar Transistor is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high


    OCR Scan     		IGT6D21 -f--10% IGT6E21 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    IBJT

    Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
    Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,


    Original     		PDF

    IBJT

    Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
    Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but


    Original     		AN9319 IBJT SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5 PDF

    transistor bt 808

    Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
    Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		PDF

    IBJT

    Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
    Contextual Info: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS


    Original     		AN9319 IBJT General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N PDF