GT60M Search Results

GT60M101

Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR GT60M101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX #3.3±0.2 . High Input Impedance . High Speed : tf=0.7ns Max. . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode 2.51 3.0

GT60M303

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.

Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.

GT60M302

Abstract: P channel 600v 20a IGBT
Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • Enhancement-mode • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

GT60M303

Abstract: GT60M303 application GT60M303 circuit
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT60M301

Abstract: 20A igbt
Contextual Info: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.

GT60M303 application

Abstract: GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)

GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.

GT60M322

Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A)

Contextual Info: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode

transistor fc 1013

Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •

S5J12

Abstract: IC60N gt60m104
Contextual Info: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Enhancement mode type • High speed • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) • FRD included between emitter and collector

GT60M323

Contextual Info: GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed • • Low saturation voltage : VCE sat = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT60M301

Abstract: HEI100
Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed :GBT tf= 0.25¿¿s Typ.

GT60M322

Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 s typ. (IC = 60 A)

GT60M301

Contextual Info: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT6QM3Q1 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.25,«s Typ.

VQE 22

Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.

GT60M101

Abstract: X10V
Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE GT60M101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX . 0 3 .3 ± 0 .2 . High Input Impedance . High Speed : tf = 0. l\is Max. . Low Saturation Voltage : VCE(sat) • OV(Max.) . Enhancement-Mode

GT8G101

Abstract: 2BLC 27F2C 2-21F2C GT60M302
Contextual Info: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode

Contextual Info: GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Unit: mm Enhancement mode type High speed : tf = 0.15 µs typ. (IC = 60 A)