X10V Search Results

p6r8m

Abstract: 13006-2 FZ 63 capacitor 1000 6.3V 20SEP33M 10SVPD56M 16SVP100M 25SEP6R8M 6SVP100M 7190K
Contextual Info: 2010-07 2 主な使用事例 回路使用上の注意 1．大電流サージ抑制方法の説明 3 2．大電流サージの抑制方法の例 4 3．急速放電の電流抑制 5 4．ＯＳ-ＣＯＮとアルミ電解コンデンサ並列接続時の注意

M25053

Abstract: 30 kw induction heater motor protection relay k2cm LG2-AB OTG-L21 complete 5v circuit diagram induction heater sdv-dh6 pf08 3a OMRON tacho-generator SDN SD fuse F10A
Contextual Info: Measuring & Motor Protective Relays Group Catalog Measuring & Motor Protective Relays Group Catalog OMRON Corporation Industrial Automation Company Industrial Devices and Components Division H.Q Industrial ControI Components Department Shiokoji Horikawa, Shimogyo-ku,

75545P

Abstract: 75545S
Contextual Info: in terrii HUF75545P3, HUF75545S3S D ata S h e e t J u n e 1999 F ile N u m b e r 4 7 3 8 .1 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance • rDS ON = 0.01 O il, V q s = 10V

DETECTION FUITE

Abstract: DETECTEUR X2F1-G
Contextual Info: IE2FQ DETECTEUR DE PROXIMITE INDUCTIF Détecteur résistant aux projections de soudure Boîtier et écrous de fixation en Teflon, résistant aux projections de soudure et aux produits chimiques. Boîtier étanche à l’eau, conforme à la norme IEC IP67.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

FMXG26

Abstract: sanken power transistor FGM623S FMX-G26S fmxg sanken
Contextual Info: SANKEN ELECTRIC FGM623S Features ・Low Saturation Voltage VCE sat =1.5V typ. (IC=30A) ・High Speed SW tf=120ns typ. (IC=30A) http://www.sanken-ele.co.jp Jul. 2010 Package TO-3PF Applications ・Current Resonance Inverter Switching Equivalent circuit C(2)

t04 88

Abstract: CF35 IGBT 100V 100A MGD623 T04003 mgd623s T04-003EA-090721
Contextual Info: IGBT MGD623S July, 2009 •Features ■Package-TO-3P • Low Saturation Voltage VCE sat =1.8V typ. • High Speed tf=120ns typ. • Low VF FRD Included VF=1.2V typ. ■Applications • Current Resonance Inverter Switching • Induction Heating Cooking ■Equivalent circuit

mgd623n

Abstract: t04 88 T04 diode CF35 15VRG t04 75 B-205
Contextual Info: IGBT MGD623N July, 2009 •Features ■Package-TO-3P • Low Saturation Voltage VCE sat =1.7V typ. • High Speed tf=200ns typ. • Low VF FRD Included VF=1.2V typ. ■Applications • Current Resonance Inverter Switching • Induction Heating Cooking ■Equivalent circuit

GT40

Contextual Info: GT40M301 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE fiTJil M 301 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode • H ig h s p e e d IG B T : t f = 0 .25^8 TYP.

Contextual Info: 600 V, 18 A, IGBT FGM633 Features Package  Low Saturation Voltage  High Speed Switching  RoHS Compliant TO-3PF-3L  VCE - 600 V  IC-18 A TC = 100 °C

VQE 24

Abstract: GT40M101
Contextual Info: GT40M101 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 4 0 M 1 01 HIGH POWER SWITCHING APPLICATIONS. • • • • High Input Impedance High Speed : tf^ O .^ s Max. Low Saturation Voltage : V C E (sa t)~ 3 .4 V (Max.) Enhancement-Mode

GT80J101

Abstract: 80J101 2-21F1C J101
Contextual Info: TOSHIBA GT80J101 G T 8 0 J 101 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N -C H A N N E L MOS TYPE HIGH POWER SW ITCHING APPLICATIONS. • High Input Impedance • High Speed • Low Saturation Voltage • Enhancement-Mode tf=0.40^s Max. v CE(sat) = 3-5V (Max.)

Contextual Info: H I-5 6 9 0 V /9 5 V /9 7 V H a r r is High Speed, 12-Bit Low Cost Monolithic Digital-to-Analog Converter Features Applications • V o lta g e O u tp u t w ith Fast S e t tlin g . 750n s H ig h S le w R a te .5 0 V // lis

Contextual Info: h a r r i s H S -508A R H /883S Radiation Hardened 8 Channel CMOS Analog Multiplexer With Overvoltage Protection J u ly 1 9 9 0 Pinouts Features SID EBRAZE TOP VIEW • This Circuit is Processed in Accordance to M IL-STD -883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Vectron Laboratories

Abstract: CO-711 BV63T ocxo 705sb C0718 CO-718S CO718S
Contextual Info: VECTRON LABORATORIES 3=iE INC » • CI 4 4 7 3 2 Q OGGObSG 2 «VEL Low Profile PC Board Mount OCXOs 5 - 4 5 - 0 2 » T - S O - O S ' FREQUENCY CO-711 SER IE S C0-718S S E R IE S AT Cut Crystal (S C /IT Cut Crystal) 5 MHz and 10 MHz standard. Other frequencies available in 4-34 MHz range with sine output

GT60M101

Abstract: X10V
Contextual Info: INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL MOS TYPE GT60M101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm 20.5MAX . 0 3 .3 ± 0 .2 . High Input Impedance . High Speed : tf = 0. l\is Max. . Low Saturation Voltage : VCE(sat) • OV(Max.) . Enhancement-Mode

irc 455 bd

Contextual Info: ANALOG DEVICES □ Real-Time Analog Computational Unit ACU A0S38 FEATURES AD538 FU N C TIO N A L BLOCK DIAGRAM (VzY" Transfer Function Wide Dynamic Range (Denominator) -1000:1 Simultaneous Multiplication and Division Resistor-Programmable Powers & Roots

AN5355

Abstract: AN5356 AN535
Contextual Info: AN5355, AN5356 AN5355, AN5356 > ^ 7 1 — X HI! & / Analog Interface C ircuit for T eletex t S ystem s • m m U n it : mm AN5355, AN5356Ü, ? 7 x - x ■ * r ' 3 - r b il 4 > 1<C b L X aa:Wt5 ftfc¥ # fa ifc fA |n |jf& -c l-o 2<n a • BW # 2 8 MHz • i ë S i â X 'i

GT60M104

Abstract: S5J12 GT60M
Contextual Info: GT60M104 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : V^ e (sat) = 3.7V (Max.) Enhancement-Mode

S87A

Abstract: sdv-dh6 100-110VDC SDV-FH2T sdv-fh1 SDV-DH2
Contextual Info: Voltage Sensor SDV CSM_SDV_DS_E_3_1 Overvoltage/Undervoltage Monitoring Relay for AC and DC Input • Detect overvoltages or undervoltages switch selectable from 4 mV to 300 V. • Detect undercurrent, reverse current, or overcurrent in DC circuits using shunt (SDV-FL).

SANKEN BRIDGE DIODE 50A

Abstract: sanken diode
Contextual Info: http://www.sanken-ele.co.jp SANKEN ELECTRIC ＳＬＡ５２２７ Features ・Built-in IGBT and diode bridge of partial switching PFC circuit Enable to reduce mounting area ・Low saturation voltage IGBT VCE sat = 1.7V max ・Low saturation voltage diode bridge VF = 1.1V max

sdv-dh6

Abstract: S87A SH100 50 sdv-fh2 SDV-DH2 OMRON STEP RELAY 8 pin dc omron relay terminals for engine signal dc ac inverter reference design 8PFA OMRON DIP switch
Contextual Info: Voltage Sensor SDV Overvoltage/Undervoltage Monitoring Relay for AC and DC Input • Detect overvoltages or undervoltages switch selectable from 4 mV to 300 V. • Detect undercurrent, reverse current, or overcurrent in DC circuits using shunt (SDV-FL).

35kA

Abstract: hi-524-2
Contextual Info: HI-524 HARRIS S E M I C O N D U C T O R 4-Channel Wideband and Video Multiplexer A u g u st 1997 Features Description • • • • T h e H I-52 4 is a 4 -C h a n n e l C M O S analog m u ltip le xe r d e sig n e d Crosstalk 10M H z . <-60dB

1S1948

Abstract: 1S2063 V03J
Contextual Info: 4496205 H I T A C H I / OPTOELECTRONICS V03 • —iSSaiEffl U3 > 5' -f % 6 8C 0 9 7 9 4 o T - ö l - 1 3 — K (General-Use Rectifier Diode) bñ VRRM : 2 0 0 V -8 0 0 V DE I ^ M T L S D S OOOTTTM 0 O ' f (AV) : 1 -3A 62M IN -(2 .4 4 )5 .0M A X "2 9 M IN -+ ^ o .2 H ^ 2 9 M I N - <1-1 4 >