GT60M30 Search Results

GT60M303

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP.

Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANN EL MOS TYPE GT60M301 Unit in mm HIGH POWER SW ITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq BT tf=0.25/¿s Typ.

GT60M302

Abstract: P channel 600v 20a IGBT
Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.22/¿s TYP. FRD trr —0.7/¿s (TYP.)

Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit in mm The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT : tf=0.25//s TYP. FRD

GT60M303

Abstract: GT60M303 application GT60M303 circuit
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT60M301

Abstract: 20A igbt
Contextual Info: TOSHIBA GT60M301 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N C HANNEL M O S TYPE GT60M301 U nit in mm HIGH PO W E R SWITCHING APPLICATIONS. • • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode H igh sp eed IGBT : tf= 0.25/^s TYP.

GT60M303 application

Abstract: GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25 s TYP. FRD : trr = 0.7 s (TYP.)

GT60M303 application

Abstract: GT60M303 circuit igbt failure rate
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25µs TYP.

transistor fc 1013

Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS U nit in mm 03.3 + 0.2 20.5MM. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode •

GT60M303

Abstract: GT60M303 circuit toshiba code igbt TOSHIBA IGBT TOSHIBA IGBT GT60M303
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

GT60M301

Abstract: HEI100
Contextual Info: TOSHIBA GT60M301 TO SHIBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed :GBT tf= 0.25¿¿s Typ.

GT60M301

Contextual Info: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT6QM3Q1 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • The 3rd Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed IGBT tf=0.25,«s Typ.

VQE 22

Abstract: sk 8060 GT60M303 TOSHIBA IGBT GT60M303 GT60M303 application vqe 24 d GT60M
Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • • • The 4th Generation FRD Included Between Emitter and Collector Enhancement-Mode High Speed Iq b T : tf=0.25/*s TYP.

GT8G101

Abstract: 2BLC 27F2C 2-21F2C GT60M302
Contextual Info: TOSHIBA GT60M302 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL M O S TYPE GT60M302 HIGH P O W E R SWITCHING APPLICATIONS Unit in mm ¿0 .5 M A X. • The 3rd Generation • FRD Included Between Em itter and Collector • Enhancement-Mode

2fy transistor

Abstract: RJ 0822 R K J 0822
Contextual Info: TOSHIBA GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS • The 4th Generation • FRD Included Between E m itter and Collector • Enhancem ent-Mode • High Speed IGb T : tf=0,2fy«j TYP,

GT60M303

Abstract: TOSHIBA IGBT GT60M303 GT60M303 application gt60m303 application notes 2-21F2C
Contextual Info: GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M303 Unit: mm HIGH POWER SWITCHING APPLICATIONS The 4th Generation FRD Included Between Emitter and Collector Enhancement−Mode High Speed IGBT : tf = 0.25µs TYP. FRD : trr = 0.7µs (TYP.)

Contextual Info: GT60M301 U nit in mm HIGH PO W ER SW ITCHING APPLICATIO N S. • • • • • The 3rd Generation FRD Included Between Em itter and Collector Enhancement-M ode High Speed IQBT : tf=0.25^s TY P. FRD : trr = 0.7^s (TYP.) Low Saturation Voltage : VCE(sa[) = 3.4V (MAX.)

GT60M301

Abstract: R1244 20A igbt
Contextual Info: SILICON N CHANNEL MOS TYPE GT60M301 U n it in m m HIGH POW ER SW ITCHING APPLICATION S. 20.5MAX. • T he 3rd G e n era tio n • FRD Included B etw een E m itte r a n d C ollector • E nhancem ent-M ode • H ig h s p e e d IGBT : tf= 0 .2 5 //s TYP. FRD

GT60M301

Abstract: GT60M 60A 150V IGBT
Contextual Info: TOSHIBA GT60M301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M301 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT

Contextual Info: TOSHIBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS • M A X IM U M RATINGS Ta = 25°C CARACTERISTICS Collector-Emitter Voltage Gate-Emitter Voltage Collector Current

Contextual Info: TO SH IBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT tf=0.22/¿s TYP.

GT60M302

Abstract: tf022 gt60m30 GT60M
Contextual Info: TO SH IBA GT60M302 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE GT60M302 HIGH POWER SWITCHING APPLICATIONS • The 3rd Generation • FRD Included Between Emitter and Collector • Enhancement-Mode • High Speed • IGBT tf=0.22/¿s TYP.

TOSHIBA IGBT GT60M303

Abstract: GT60M303 IGBT 900v 60a GT60M303 application 2-21F2C
Contextual Info: GT60M303 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT60M303 ○ 並列共振スイッチング用 単位: mm ○ 第 4 世代 z 高速 FRD を内蔵しています。 z 取り扱いが簡単なエンハンスメントタイプです。

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction