GUNN DIODES Search Results

AN5205

Abstract: Gunn Diode at power supply circuit gunn diode radar gunn diodes Gunn Diode gunn diode oscillator diode gunn gunn diode radar module radar gunn diode AN5205-2
Contextual Info: AN5205 AC2001 - 77 GHz Gunn Oscillator Module Application Note AN5205-2.0 July 1999 Electric field breakdown of a Gunn diode is related to the 'nl' product of the device doping level multiplied by the active length . The Gunn diode used in the AC2001 is normally operated at about 5 to 7V, whereas voltage

diode b34

Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Contextual Info: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave

gunn diodes

Abstract: DC1279F-T Gunn Diode gunn diode datasheet 10 GHz gunn diode DC1200-T gunn diode marconi Marconi gunn DC1278F-T DC1279D
Contextual Info: Millimetre Wave Graded Gap Gunn Diodes The DC1200-T series extends the range of high power, graded gap, GaAs CW Gunn diodes further into the millimetre wave frequency band. They offer superior stability where low df/dt, low df/dv and cold start turn-on are at a premium.

Gunn Diode MA49156

Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Contextual Info: HUGHES/ MICROWAVE PRDTS 1 TE D m 41313303 OOOOaiO =1 Gunn Diodes _ T :07-i| _ Hughes 4720xH series of GaAs Gunn Diodes are available for operation at any specified frequency between 26.5 and 95 GHz. Power output levels range from 20 mW at 95 GHz to

Contextual Info: P ^p jlG E C P L E S S E Y DS3420-1.2 DC1270/1220 Series MILLIMETRE WAVE GUNN DIODES STANDARD AND GRADED GAP The introduction of the DC1270/DC1220 Series extends the range of high power standard and graded-gap GaAs CW Gunn diodes further into the millimetre wave frequency

Gunn Diode MA49156

Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
Contextual Info: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is

Gunn Diode

Abstract: gunn diode oscillator gunn diode generator Gunn Diode at power supply circuit two cavity resonator GaAs Gunn Diode 24 GaAs Gunn Diode impatt varactor diode for x band radar DIODE TH 5 N
Contextual Info: A ffe Application Note Gunn Diode/Oscillator M514 Description The Gunn diode is a gallium arsenide GaAs device capable of converting direct current (dc) power into radio frequency (RF) power when inserted in an appropriate cavity. This RF power is the result o f a bulk negative resistance property

gunn diodes

Abstract: AH443 GUNN impatt DH385 AH365 DH378 AH152 AH802 GaAs p-i-n diodes
Contextual Info: DIODES SELECTION GUIDE P R O D U C T S REF. D E S C R IP T IO N AH152 to AH 169 GaAs Abrupt tuning Varactors AH202 to AH240 GaAs Hyperabrupt tuning Varactors AH365 to AH380 GaAs Gunn Diodes 18-26GHz AH443 to AH497 GaAs Gunn Diodes (9-18GHZ) AH501 to AH539

gunn diode generator

Contextual Info: GEC P L E S S E Y CT3513-1.2 GUNN DIODES - INTRODUCTION INTRODUCTION 1.1. Basic Gunn Diode Action There are two energy levels A and B— also known as Valleys—with the following properties: The variation of current with field for a perfect two terminal gallium arsenide device is shown in simplified form in Fig.1.

gunn diodes

Abstract: gunn 4411 gunn diode 10.5 ghz
Contextual Info: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw

ML4942

Abstract: ML4953
Contextual Info: M L 4000 SERIES HIGH FREQUENCY CW GUNN DIODES - 18 TO 100GHZ This series o f high frequency Gunn diodes features low noise both AM and FM , good efficiency and one-step conversion from dc to microwave energy using a single, low voltage power supply. These devices are ideally suited for use as param p pump sources and as transm itters

CXY11C

Abstract: gunn effect gunn diode 10.5 ghz CXY11a Gunn Diode CXY11B CXY11 10 GHz gunn diode Mullard CXY11B cxyiia
Contextual Info: GUNN EFFECT DEVICES CXYIIA CXYIIB CXYMC T E N T A T IV E D A T A G allium a rsen id e bulk effect devices em ploying the Gunn effect to produce CW oscillatio n s at m icrow ave fre q u e n c ie s. Each device is encapsulated in a v a ra c to r type p ill package suitable for m ounting in v a rio u s types of cavity.

MA49156

Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
Contextual Info: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION

gunn diode datasheet

Abstract: gunn diodes gunn diode marconi Marconi gunn Gunn Diode marcon DC1251F DC1251G DC1251H DC1251J
Contextual Info: High Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 40 GHz * Low cost * High reliability * Custom devices available Minimum Typical Typical operating operating Frequency output band power voltage current Outline

gunn diode datasheet

Abstract: MARCONI DC1201C Gunn Diode DC1201A marcon DC1203B DC1201E gunn diode marconi DC1203A DC1203C
Contextual Info: Low Power Gunn Diodes Gallium Arsenide bulk effect devices for CW power generation in the range 4 to 26 GHz * Low cost * Low operating current * Custom devices available Minimum Typical Typical operating Frequency output operating band power voltage current

Contextual Info: MA49192-138 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)40G Frequency Max. (Hz)60G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage4.0 I(Oper.) Typ.(A) Oper. Current300m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

gunn diode

Contextual Info: DGB6839D Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power100m Frequency Min. (Hz)12.4G Frequency Max. (Hz)18G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage8.0 I(Oper.) Typ.(A) Oper. Current500m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: ML4941 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power200m Frequency Min. (Hz)27G Frequency Max. (Hz)32G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage6.5 I(Oper.) Typ.(A) Oper. Current1.6 Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DC1204E Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power30m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DGB8241 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: DC1204C Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz) Frequency Max. (Hz)5.0G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage15 I(Oper.) Typ.(A) Oper. Current130m Semiconductor MaterialGaAs Package StylePill-C Mounting StyleS

Contextual Info: MA49190-118 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power10m Frequency Min. (Hz)18G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage7.0 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT

Contextual Info: DGB8244 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power20m Frequency Min. (Hz)24.5G Frequency Max. (Hz)26.5G Efficiency Min. V(Oper.) Nom.(V) Oper. Voltage5.0 I(Oper.) Typ.(A) Oper. Current220m Semiconductor MaterialGaAs Package StyleScrew Mounting StyleT