DDR2 Hynix 2Gb x 8
Abstract: H5PS2G H5PS2G83
Text: H5PS2G43MFP H5PS2G83MFP 2Gb DDR2 SDRAM H5PS2G43MFP H5PS2G83MFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5PS2G43MFP
H5PS2G83MFP
6-10per)
DDR2 Hynix 2Gb x 8
H5PS2G
H5PS2G83
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H5PS2G83AFR
Abstract: No abstract text available
Text: H5PS2G43AFR H5PS2G83AFR 2Gb DDR2 SDRAM Lead-Free&Halogen-Free RoHS Compliant H5PS2G43AFR H5PS2G83AFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5PS2G43AFR
H5PS2G83AFR
6-10per)
H5PS2G83AFR
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DDR2 Hynix 2Gb x 8
Abstract: No abstract text available
Text: H5PS2G43EMR H5PS2G83EMR 2Gb DDR2 SDRAM DDP H5PS2G43EMR H5PS2G83EMR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5PS2G43EMR
H5PS2G83EMR
6-10per)
DDR2 Hynix 2Gb x 8
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Untitled
Abstract: No abstract text available
Text: H5PS2G43EMR H5PS2G83EMR 2Gb DDR2 SDRAM DDP H5PS2G43EMR H5PS2G83EMR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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H5PS2G43EMR
H5PS2G83EMR
6-10per)
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H5PS2G83AFR-S6C
Abstract: CAPACITOR CK 158 VN0810 DDR2-800 PC2-6400 DDR2 samsung pc2-6400 samsung dram H5PS2G83AFR
Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a
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VL491T2863B-E7S
128Mx72
200-PIN
VL491T2863B
128Mx8
200-pin
200-pin,
VN-081009
H5PS2G83AFR-S6C
CAPACITOR CK 158
VN0810
DDR2-800
PC2-6400
DDR2 samsung pc2-6400
samsung dram
H5PS2G83AFR
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H5PS2G
Abstract: DDR2-667 DDR2-800 RA13
Text: 240pin Registered DDR2 SDRAM DIMMs based on 2Gb version A This Hynix Registered Dual In-Line Memory Module DIMM series consists of 2Gb version A DDR2 SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 2Gb version A based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width
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240pin
1Gx72
HMP31GP7AFR4C
00MIN
00max
1240pin
H5PS2G
DDR2-667
DDR2-800
RA13
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HYMP512S64CP8-Y5
Abstract: HYMP564S64CP6-Y5 H5TQ1G63BFR-H9C h5ps2g83afr-s6c H5PS1G63EFR-Y5C H5TQ1G83BFR-H9C HYMP564S64CP6-C4 HY5PS121621Cfp-y5 H5PS1G63EFR-S5C HY5PS12821CFP-Y5
Text: Q3’2009 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43AFP-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43BFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C
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256Mx4
H5TQ1G43AFP-H9C
78ball)
H5TQ1G43BFR-H9C
H5TQ1G43TFR-H9C
H5TQ1G43AFP-G7C
H5TQ1G43BFR-G7C
HYMP512S64CP8-Y5
HYMP564S64CP6-Y5
H5TQ1G63BFR-H9C
h5ps2g83afr-s6c
H5PS1G63EFR-Y5C
H5TQ1G83BFR-H9C
HYMP564S64CP6-C4
HY5PS121621Cfp-y5
H5PS1G63EFR-S5C
HY5PS12821CFP-Y5
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL495T5263A-E6Y REV: 1.2 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED Mini-DIMM 244-PIN Description The VL495T5263A is a 512Mx72 DDR2 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 28-bit registered buffer in BGA
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VL495T5263A-E6Y
512Mx72
244-PIN
VL495T5263A
256Mx8
28-bit
244-pin
VN-281009
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL495T5269EE6YA-S REV: 1.3 General Information 4GB 512Mx72 DDR2 SDRAM VLP ECC REGISTERED Mini-RDIMM 244-PIN Description The VL495T5269E is a 512Mx72 DDR2 SDRAM high density Mini-RDIMM. This memory module is dual rank, consists of nine stacked CMOS 512Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 28-bit
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VL495T5269EE6YA-S
512Mx72
244-PIN
VL495T5269E
512Mx8
28-bit
244-pin
VN-281009
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL470T5763A-E6YA REV: 1.0 General Information 2GB 256Mx64 DDR2 SDRAM NON-ECC UNBUFFERED SODIMM 200-PIN Description The VL470T5763A is a 128Mx64 DDR2 SDRAM high density SODIMM. This single rank memory module consists of eight CMOS 256Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages and a 2K EEPROM in an 8-pin
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VL470T5763A-E6YA
256Mx64
200-PIN
VL470T5763A
128Mx64
256Mx8
200-pin
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H5TQ2G63BFR-H9C
Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9
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256Mx4
H5TQ1G43BFR-H9C
78ball)
H5TQ1G43TFR-H9C
H5TQ1G43BFR-G7C
H5TQ1G43TFR-G7C
H5TQ1G83BFR-H9C
H5TQ2G63BFR-H9C
H5TQ1G83BFR-H9C
H26M42001EFR
H5RS1H23MFR
h27u1g8f2b
H27U1G8F2
H27UBG8T2A
H27UBG8T
H5MS2G22MFR-J3M
H26M54001BKR
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H5PS2G83AFR-S6C
Abstract: H5PS2G83AFR DDR2-667 PC2-5300 VL495T5263A-E6 VL495T5263A
Text: Product Specifications PART NO.: VL495T5263A-E6Y REV: 1.2 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED Mini-DIMM 244-PIN Description The VL495T5263A is a 512Mx72 DDR2 SDRAM high density Mini-DIMM. This memory module consists of eighteen CMOS 256Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 28-bit registered buffer in BGA
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VL495T5263A-E6Y
512Mx72
244-PIN
VL495T5263A
256Mx8
28-bit
244-pin
VN-281009
H5PS2G83AFR-S6C
H5PS2G83AFR
DDR2-667
PC2-5300
VL495T5263A-E6
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H5PS2G83AFR-S6C
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL491T2863B-E7S REV: 1.3 General Information 1GB 128Mx72 DDR2 SDRAM ULP ECC UNBUFFERED SO-CDIMM 200-PIN Description The VL491T2863B is a 128Mx72 DDR2 SDRAM high density SO-CDIMM. This memory module consists of nine CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a zero delay PLL clock in BGA package, and a
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VL491T2863B-E7S
128Mx72
200-PIN
VL491T2863B
128Mx8
200-pin
200-pin,
VN-081009
H5PS2G83AFR-S6C
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Untitled
Abstract: No abstract text available
Text: Product Specifications PART NO.: VL495T5269EE6YA-S REV: 1.3 General Information 4GB 512Mx72 DDR2 SDRAM VLP ECC REGISTERED Mini-RDIMM 244-PIN Description The VL495T5269E is a 512Mx72 DDR2 SDRAM high density Mini-RDIMM. This memory module is dual rank, consists of nine stacked CMOS 512Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, a 28-bit
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VL495T5269EE6YA-S
512Mx72
244-PIN
VL495T5269E
512Mx8
28-bit
244-pin
VN-281009
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