H7N0607DSTL Search Results

H7N0607DL

Abstract: H7N0607DS PRSS0004ZD-B PRSS0004ZD-C H7N0607DSTL A605A
Contextual Info: H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0300 Rev.3.00 Jan.27.2005 Features • Low on-resistance RDS on = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

H7N0607DL

Abstract: H7N0607DS PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

H7N0607DL

Abstract: H7N0607DS
Contextual Info: H7N0607DL, H7N0607DS Silicon N Channel MOS FET High Speed Power Switching REJ03G0124-0200Z Rev.2.00 Jul.21.2004 Features • Low on-resistance RDS on = 26 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline DPAK(L)-2 D DPAK-(S) 4 4 1. Gate