HARRIS MOSFET N-CHANNEL NH Search Results

Contextual Info: IRF614 HARRIS S E M I C O N D U C T O R 2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET January 1998 Description Features 2.0A, 250V Linear Transfer Characteristics This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET

vertical JFET

Abstract: diode c23 jfet cascode AN8610 spice models P-Channel Depletion Mosfets IRF130 datasheet list of P channel power mosfet DEPLETION MOSFET Harris Semiconductor jfet
Contextual Info: Harris Semiconductor No. AN8610.1 Harris Power MOSFETs February 1994 SPICING-UP SPICE II SOFTWARE FOR POWER MOSFET MODELING Author: C.F. Wheatley, Jr., H.R. Ronan, Jr., G.M. Dolny The SPICE II simulation software package is familiar to most designers working in computer-aided design of integrated

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

n mosfet depletion pspice model parameters

Abstract: NMOS depletion pspice model Sharp amplifier SM30 pspice high frequency mosfet Sharp SM30 RFH75N05 datasheet RFH75N05 SM30 n mosfet pspice parameters P-Channel Depletion Mosfets
Contextual Info: Harris Semiconductor No. AN9210 Harris Power MOSFETs February 1992 A NEW PSPICE SUBCIRCUIT FOR THE POWER MOSFET FEATURING GLOBAL TEMPERATURE OPTIONS Author: William J. Hepp - Harris Semiconductor - Mountaintop PA C. Frank Wheatley Jr. - SM, IEEE - Consultant

RFP9240

Abstract: IRFP P CHANNEL MOSFET* 100v
Contextual Info: HARRIS SEMICOND SECTOR 23 H a r r i s IHAS M302271 DDBSSÖS 3 4QE D IMFP9240R/P9241R IRFP9242R/P9243R Avalanche Energy Rated -Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -10 A and -12A, -20 0 V and -1S 0V • rDS ON = 0 .5 0 ii and 0 .7 fi

2N6851

Abstract: 2N6851 JANTX 2n6800
Contextual Info: Rugged Power MOSFETs 2N6851 File N u m be r 2218 Avalanche-Energy-Rated P-Channel Power MOSFETs -4.0A, and -200V I ds on = 0.80Q TERMINAL DIAGRAM Features: • S in g le p u lse a v a la n ch e e n e rg y ra te d m S O A is p o w e r-d is s ip a tio n lim ite d

MIL-STD-803

Abstract: IH5143
Contextual Info: IH 5140-IHS145 IH 5140-IH 5145 S E M I C O N D U C T O R HARRIS RCA BE • High-Level CMOS Analog Switch INTERSIL GENERAL DESCRIPTION FEATURES The IH5140 Family of CMOS switches utilizes Harris’ latch-free junction isolated processing to build the fastest

MOSFET 4465

Abstract: 4465 mosfet
Contextual Info: HARRIS A ugust IRFF330/331/332/333 IRFF330R/331R /332R /333R N -Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO-2Q5AF • 3.0A and 3.5A, 350V - 400V • rDS on = 1 o n and 1-s n • Single Pulse Avalanche Energy Rated* GATE SOURCE • SOA is Power-Disslpatlon Limited

nhjt

Contextual Info: 2N7305D, 2N7305R 2N7305H OR H a r r i s U U S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRK460 D, R, H . Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 17A, 500V, RDS(on) = 0.4000 TO-2Q4AE • Second Generation Rad Hard MOSFET Result* From New Design Concepts

Contextual Info: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*

IFU422

Abstract: FU420 IFU420 IRFR421 420 Diode FR420 IFR421 IRFU N-Channel Power MOSFETs
Contextual Info: m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Features Packages IR F U 4 2 0 /4 2 1 /4 2 2 T O -2 5 1 A A TOP VIEW • 2.2 A and 2 .5 A, 4 5 0 V and 5 0 0 V • rD S on = a i d 4 .0 n I SOURCE • Single Pulse A valanche Energy Rated

circuits of IRF150

Abstract: IRF150-152
Contextual Info: HARRIS IBM50/151/152/153 IRF150R/151R/152R/153R N -Channel Power MOSFETs Avalanche Energy Rated* August 19 9 1 Package Features TO -2Q 4AE • 33A and 40A, 60V - 100V • rDS on = 0 .0 5 5 ÎÎ and 0 .0 8 fi DRAIN (FLANGE) y SOURCE • Single Pulse Avalanche Energy Rated*

Contextual Info: H A R R I9 9H 9 5 IS S E M I C O N D U C T O R 19 4 9 0 t h * r9 u * * I H9 9 9 5 19 4 9 5 High-Level CMOS Analog Switches September 1997 Features Description • Super Fast Break-Before-Make Switching The IH5140 Family of CMOS switches utilizes Harris’ latchfree junction isolated processing to build the fastest switches

1RF440

Contextual Info: • 4 3 D5 2 7 1 0 0 5 3 Tk>fl 574 ■ Jg HARRIS HAS IR F 4 4 0 /4 4 1 /4 4 2 /4 4 3 IR F 4 4 0 R /4 4 1R /4 4 2 R /4 4 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2Û 4A A BOTTOM VIEW • 7A and 8A, 4 50 V - 500V

Contextual Info: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs Ju n e 1 9 9 8 Features Package • 5A, 500V, RDS on = 1.420S1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

F9232

Contextual Info: IR F 9230, IR F9231 IR F 9232, IR F9233 HARRIS Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • - 5 .5 A a n d - 6 .5 A , - 1 5 0 V a n d - 2 0 0 V • r D S O N = 0 . 8 0 Î Î a n d 1 . 2 f i SOURCE

C40r

Abstract: IRFA ndam
Contextual Info: m IRFAC40R IRFAC42R H a r r is N -Channel Power MOSFETs Avalanche Energy Rated August 1991 Package F e a tu re s • T O -2 0 4 A A BOTTOM VIEW 6 .2 A a n d 5.4 A , 6 0 0 V • r D S on = 1 -2 f i a n d 1-6 n • R e p e titiv e A v a la n c h e R a tin g s

IRF250R

Abstract: free IR circuit diagram
Contextual Info: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi

Contextual Info: F£Ö to 199,! HI7131 m HARRIS Ë SE M IC O N D U C TO R Ë Ë Ë Ë Ë 3 1/2 D igit Low Power, High C M R R LCD D isplay Type A /D C onverter February 1993 Features Description • 120dB CMRR Equal to ±0.01 Count/V of Com­ mon Mode Voltage Error • Fast Recovery from Input Overrange Results

mosfet 4456

Abstract: 1RFF312R 4456 mosfet LT 312r 1RFF312
Contextual Info: 3 ] H A R R I S IRFF3 1 0 /3 1 1 /3 1 2 / 3 1 3 IRFF3 1 OR/3 1 1 R/3 1 2 R/3 1 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package TQ-205AF • 1.35A and 1.15A, 350V - 400V • rDS on = 3-Bfl and 5 .0 fl • Single Pulse Avalanche Energy Rated*

1RFF113

Abstract: FF113R IRFF111R 1RFF110
Contextual Info: 3 H A R R I S IRFF110/ 111/112/113 IRFF110R/111R/112R/113R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-205AF • 3.0A and 3.5A, 80V - 100V BOTTOM VIEW • rDS(on = O-ßf1 and 0 .8 ft • Single Pulse Avalanche Energy Rated*

MOSFET IRF 630

Abstract: IRF630 f630 IRF630R 633R
Contextual Info: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*

TA17465

Abstract: RF4E20N50 power mosfet 500v 20a circuit A1025
Contextual Info: RF4E20N50S Data Sheet 20A, 500V, 0.240 Ohm, N-Channel Power MOSFETs May 2002 Features • 20A, 500V [ /Title These are N-Channel enhancement mode silicon gate • rDS ON = 0.240Ω (HUF75 power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated

IRF22

Abstract: R/Detector/"detect18 ic"/"CD"/F223
Contextual Info: IR F220, IR F 22 1 IR F222, IRF22 3 2 HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistors August 1991 Features Package TO -20 4 A A BOTTOM VIEW • 4.0A and 5.0A, 150V - 200V • rDS(on = 0 .8 0 and 1 .2 fi • SOA is Power-Dissipation Limited