HARRIS SEMICONDUCTOR OPERATIONAL EQUIVALENTS Search Results

Contextual Info: a HC-5504ALC HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit juiy 1993 Features • Description Functional Replacement for the HC-5504 T h e Harris S LIC incorporates many of the B O R S H T func­ tions on a single IC chip. This includes D C battery feed, a

Harris Semiconductor operational equivalents

Abstract: sec 472 varistor
Contextual Info: NA Series S E M I C O N D U C T O R Industrial High Energy Metal-Oxide Square Disc Varistors January 1998 Features Description • Provided in Disc Form for Unique Packaging by Customer The NA Series of transient surge suppressors are varistors MOVs in square disc form, intended for special industrial

sec 472 varistor

Contextual Info: [ /Title NA Series /Subject (Industrial High Energy MetalOxide Square Disc Varistors) /Autho r () /Keywords (Harris Corporation, Suppression Products, TVS, Transient Suppression, Protection, AC Line, AC NA Series Data Sheet Industrial High Energy Metal-Oxide

Contextual Info: Af>ft ô 19» Œ CA3262A, CA3262 Quad-Gated Inverting Power Driver A prii 1993 Features Description • • • • • • • The CA3262 and CA3262A are used to interface low-level logic to high current loads. Each Power Driver has four inverting switches consisting of a non-inverting logic input

Contextual Info: FSYE430D, FSYE430R June 1999 Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor Communications Division has developed a series of Radiation Hardened MOSFETs specifically designed for

Contextual Info: FSYA250D, FSYA250R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs September 1997 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ260D, FSJ260R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Description • 44A, 200V, ros O N = 0.050Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSJ160D, FSJ160R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 70A, 100V, rDS 0 N = °<>22i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

pj 939 diode

Abstract: diode PJ 41 MG pj 939 diode SS 12 pj 889 diode
Contextual Info: H A F R R I F S S L 1 3 A D , S E M I C O N D U C T O R F 1 3 A R Description Features 9A, 100V, Tds ON = 0-180i2 • Total Dose - Meets Pre-RAD Specifications to 1 00K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/m g/cm 2 with

Contextual Info: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

max6239

Contextual Info: FSTJ9055D, FSTJ9055R Data Sheet Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Harris has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: FSJ055D, FSJ055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 70A Note 1 , 60V, r D S (0 N ) = 0.011 £2 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

FSJ264

Abstract: MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
Contextual Info: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSS913AOD

Contextual Info: FSS913AOD, FSS913AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs January 1998 Features Description • 10A, -100V, rDS ON = 0.280Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
Contextual Info: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A Note 1 , 60V, rDS(ON) = 0.011Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

FSJ260

Abstract: MIL-S-19500 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 ta1766
Contextual Info: S E M I C O N D U C T O R FSJ260D, FSJ260R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 44A, 200V, rDS ON = 0.050Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs January 1998 Features Description • 70A, 60V, rDS ON = 0.014Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSS23A4D, FSS23A4R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 7A, 250V, rDS ON = 0.460Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSS13AOD

Contextual Info: FSS13AOD, FSS13AOR TO-257AA 3 LEAD JEDEC TO-257AA HERMETIC METAL PACKAGE A INCHES ØP E A1 MIN MAX MIN MAX NOTES A 0.190 0.200 4.83 5.08 - A1 0.035 0.045 0.89 1.14 - Q H1 D 0.065 R TYP. L1 Øb1 L Øb 0.025 0.035 0.64 0.88 2, 3 Øb1 0.060 0.090 1.53 2.28 -

FSL23AOD

Contextual Info: FSL23AOD, FSL23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 6A, 200V, rDS ON = 0.350Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSL13AOD

Contextual Info: FSL13AOD, FSL13AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 100V, rDS ON = 0.180Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSS23AOD1

Contextual Info: FSS23AOD, FSS23AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 9A, 200V, rDS ON = 0.330Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSS923AOD

Contextual Info: FSS923AOD, FSS923AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs February 1998 Features Description • 7A, -200V, rDS ON = 0.650Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs