HDQ13 Search Results

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16M b S yn c h ro n o u s D RAM Features • High Performance: I • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command I cl% j C L ^ S i Units j 100 83 ! MHz ; • Data Mask for Read/W rite control x4,x8

t3d01

Abstract: pin configuration of IC 1619 cp LM 3177 C16-256 MT4C16257
Contextual Info: PRELIMINARY M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM |U |I C R O N WIDE DRAM 2 5 6 K X 16 DRAM FAST-PAGE-MODE SELF REFRESH FEATURES OPTIONS P IN A S S IG N M E N T 4 0 -P in S O J T o p 4 0 -P in MARKING • Timing 70ns access -7 80ns access -8 • Write Cycle Access

hdq10

Abstract: HDQ13
Contextual Info: Advance Information S E M I C O N D U C T O R S MU9C8358 Quad 10/1 OOMb Ethernet Filter Interface DISTINCTIVE CHARACTERISTICS APPLICATION BENEFITS > 10/1 OOMb Ethernet switching, bridging, and remote access at wire speed > Four industry-standard 10/100Mb Mil ports

HDQ13

Contextual Info: O K I Semiœnductor E2G0053-17-41 M S M 5 1 1 6 1 6 5 B _ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116165B achieves high integration, high-speed operation, and low-power

2TNC

Contextual Info: IBM0316409C IBM0316809C IBM0316169C 16Mbit Synchronous DRAM Features • High Performance: • Multiple Burst Read with Single Write Option -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command 100 91 83 77 MHz • Data Mask for Read/Write control x4,x8

Contextual Info: Advance Information C T O R S M U9C8358 Quad 10/1 OOMb Ethernet F ilter Interface DISTINCTIVE CHARACTERISTICS APPLICATION BENEFITS > > 10/1 OOMb Ethernet switching, bridging, and remote access at wire speed Glueless connection to MUSIC LANCAM and > Four industry-standard 10/100Mb Mil ports