HFE CLASSIFICATION MARKING CE Search Results

HFE CLASSIFICATION MARKING CE Result Highlights (5)

Part	Manufacturer	Description
5962-8950303GC	Rochester Electronics LLC	ICM7555M - Dual Marked (ICM7555MTV/883)
54HC221AJ/883C	Rochester Electronics LLC	54HC221AJ/883C - Dual marked (5962-8780502EA)
54ACT157/VFA-R	Rochester Electronics LLC	54ACT157/VFA-R - Dual marked (5962R8968801VFA)
54LS37/BCA	Rochester Electronics LLC	54LS37/BCA - Dual marked (M38510/30202BCA)
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)

HFE CLASSIFICATION MARKING CE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SB1132 Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q Contextual Info: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE	Original	2SB1132 OT-89 2SB1132-P 2SB1132-Q 2SB1132-R -100mA -500mA, -50mA -50mA, 2SB1132 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q	PDF
pnp hfe 120-240 Contextual Info: MCC TM Micro Commercial Components Features • • • • • PNP Silicon Epitaxial Transistors Low Saturation voltage: VCE sat =0.5V(max.)(IC=1.0A) Small flat package PC=1.0 to 2.0W(mounted on ceramic substrate) High Speed Switching Time : tstg =1.0µs(typ.)	Original	2SA1213 OT-89 05Adc) 10Vdc, pnp hfe 120-240	PDF
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y	Original	KSC2881 120MHz KSA1201 OT-89 KSC2881	PDF
SOT89 MARKING CODE B2 Abstract: KSC2881 KSA1201 Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y	Original	KSC2881 120MHz KSA1201 OT-89 KSC2881 SOT89 MARKING CODE B2 KSA1201	PDF
23 marking Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3876 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KTC3876 KTA1505. 400mA. 10/--ank 100mA, 100mA 25Min. 40Min. 400mA 23 marking	PDF
KTA1505S Abstract: KTC3876S Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3876S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEAUTRES • Excellent Iif e Linearity : hFE 2 =25(Min.) a t V ce=6V , • Complementary to KTA1505S. Ic=400mA. MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KTC3876S 40QmA. KTA1505S. OT-23 100mA 400mA 100mA, 25Min. 40Min. KTA1505S KTC3876S	PDF
Contextual Info: KSC2883 NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter	Original	KSC2883 KSC2883 KSA1203 OT-89	PDF
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code	Original	KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201	PDF
transistor B3 OF Abstract: B3 transistor KSC2883 KSA1203 B3 marking transistor Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter	Original	KSC2883 KSA1203 OT-89 KSC2883 transistor B3 OF B3 transistor KSA1203 B3 marking transistor	PDF
B3 transistor Abstract: KSA1203 KSC2883 Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter	Original	KSA1203 KSC2883 OT-89 KSA1203 B3 transistor KSC2883	PDF
TRANSISTOR marking ar code Abstract: KSA1201 KSC2881 Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code	Original	KSA1201 -120V 120MHz KSC2881 OT-89 KSA1201 TRANSISTOR marking ar code KSC2881	PDF
Contextual Info: KSC2883 tm NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output Application • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1203 Marking 2 8 8 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter	Original	KSC2883 KSA1203 OT-89 KSC2883	PDF
transistor 1203 Contextual Info: KSA1203 PNP Epitaxial Silicon Transistor Low Frequency Power Amplifier • 3W Output application • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2883 Marking 1 2 0 3 P Y W W SOT-89 1 Weekly code Year code hFE grage 1. Base 2. Collector 3. Emitter	Original	KSA1203 KSA1203 KSC2883 OT-89 KSA1203OTF KSA1203YTF transistor 1203	PDF
Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic	OCR Scan	KSA1201 OT-89 120MHz KSC2881 250mm2x 0024b64	PDF

transistor marking 12w Contextual Info: KSC2883 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER SOT-89 • 3W Output Application • Collector Dissipation Pc=1-2W: Mounted on Ceramic Board • Complement to KSA1203 ABSOLUTE MAXIMUM RATINGS TA=25t; Symbol Characteristic Collector-Base Voltage	OCR Scan	KSC2883 KSA1203 OT-89 transistor marking 12w	PDF
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2982 STROBE FLASH MEDIUM POWER AMPLIFIER SOT-89 • Excellent hFE Linearity: h F E i = 140~600 • Low Collector-Emitter Saturation Voltage: Vce sat = 0.5V • Collector Dissipation Pc =1 ~2W: Mounted on Ceramic Board ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	KSC2982 OT-89 002402b	PDF
Contextual Info: 2SA1182 TOSHIBA 2 S A 1 1 82 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL PCT PROCESS Unit in mm AU D IO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS + 0.5 SWITCHING APPLICATIONS • Excellent hpE Linearity : hFE( 2) = 25 (Min.)at V ce = —6V Ic = —400mA	OCR Scan	2SA1182 400mA 2SC2859.	PDF
KSC2982 Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking	Original	KSC2982 OT-89 KSC2982	PDF
2SA1204 Abstract: 2SC2884 Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2SC2884 2SA1204 2SA1204 2SC2884	PDF
2SA1204 Abstract: 2SC2884 Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2SA1204 2SC2884 2SA1204 2SC2884	PDF
2SA1204 Abstract: 2SC2884 Contextual Info: 2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2884 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 · Suitable for output stage of 1 watts amplifier · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2SC2884 2SA1204 2SA1204 2SC2884	PDF
2SA1204 Abstract: 2SC2884 Contextual Info: 2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1204 Audio Frequency Amplifier Applications Unit: mm • High DC current gain: hFE = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)	Original	2SA1204 2SC2884 2SA1204 2SC2884	PDF
2SC1623 Abstract: 2SC1623-L4 Contextual Info: MCC TM Micro Commercial Components 2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA	Original	2SC1623-L4 2SC1623-L5 2SC1623-L6 2SC1623-L7 OT-23 2SC1623	PDF
2SC1623 Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC1623 Features • • • NPN Silicon Epitaxial Transistors High DC Current Gain: hFE=200 TYP. V CE=6.0V, IC=1.0mA	Original	2SC1623 OT-23 2SC1623	PDF

HFE CLASSIFICATION MARKING CE Search Results

HFE CLASSIFICATION MARKING CE Result Highlights (5)

HFE CLASSIFICATION MARKING CE Datasheets Context Search

2SB1132

pnp hfe 120-240

SOT89 MARKING CODE B2

23 marking

KTA1505S

transistor B3 OF

B3 transistor

TRANSISTOR marking ar code

transistor 1203

transistor marking 12w

KSC2982

2SA1204

2SA1204

2SA1204

2SA1204

2SC1623

2SC1623