KSA1201 Search Results

Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

SOT89 MARKING CODE B2

Abstract: KSC2881 KSA1201
Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2881 POWER AMPLIFIER • • • • SO T-89 C ollector-E m itter Voltage V Ceo = 1 2 0 V fT=120M H z C ollector Dissipation Pc=1~2W : M ounted on C eram ic Board C om plem ent to KSA1201 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

KSA1201

Abstract: KSC2881
Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

Contextual Info: KSC2881 NPN Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage : VCEO=120V • Current Gain Bandwidth Productor : fT=120MHz • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board • Complement to KSA1201 Marking 2 8 8 1 P Y

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSA1201 POWER AMPLIFIER • • • • S O T-89 C ollector-E m itter Voltage: VCeo= -120V fx=120MHz C ollector Dissipation Pc=1~2W : M ounted on C eram ic Board C om plem ent to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C

Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • CoHector-Emftter Voltage Veto“ 120V • fr“ 120MHz • Collector Dissipation Pc“ 1~2W: Mounted on Ceram ic Board • Complement to KSA1201 ABSOLUTE MAXIMUM RATINGS Ta-251C Sym bol

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • • • • Collector-Em itter Voltage V ceo * -120V fr-120M Hz Collector Dissipation PC“ 1~2W: Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25 TC C haracteristic

Contextual Info: Transistors Transistor T SMD Type Product specification KSA1201 Features Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSC2881 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • Collector-Emitter Voltage V c e o = 120V • fT= 120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1201 ABSOLUTE MAXIMUM RATINGS TA = 25°C Characteristic

Contextual Info: KSA1201 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER SOT-89 • • • • Collector-Emitter Voltage VCEo= -1 2 0 V fT= 120MHz Collector Dissipation Pc= 1 -2 W : Mounted on Ceramic Board Complement to KSC2881 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic

KSC2881

Abstract: KSA1201
Contextual Info: KSC2881 KSC2881 Power Amplifier • • • • Collector-Emitter Voltage : VCEO=120V Current Gain Bandwidth Productor : fT=120MHz Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Complement to KSA1201 SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor

KSA1201

Abstract: KSC2881
Contextual Info: KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

TRANSISTOR marking ar code

Abstract: KSA1201 KSC2881
Contextual Info: KSA1201 PNP Epitaxial Silicon Transistor Power Amplifier • Collector-Emitter Voltage: VCEO= -120V • fT=120MHz • Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board • Complement to KSC2881 Marking 1 2 0 1 P Y W W SOT-89 1 Weekly code Year code

KSA1201

Contextual Info: Transistors SMD Type PNP Epitaxial Silicon Transistor KSA1201 Features Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage

KSA1201

Abstract: KSC2881
Contextual Info: KSC2881 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER • Collector-Emitter Voltage VCEO=120V • fT=120MHz • Collector Dissipation PC=1~2W: Mounted on Ceramic Board • Complement to KSA1201 SOT-89 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic

KSD 166

Abstract: KSD 168 kst 232 KSC1845 KST1623 ksc2328 KSR1001 KSD201 ksp94 TIP41 342
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 KSA1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220 KSA1241

KSA1201

Abstract: KSC2881
Contextual Info: KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board Complement to KSC2881 SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

KSC2880

Abstract: KSA1200
Contextual Info: FUNCTION GUIDE TRANSISTORS 1-4. High Voltage Transistors 1-4-1. SOT-23'Type Transistors Condition Device and Polarity NPN KST42 1D KST43(1 E) PNP lc (A) VCE (V) lc (mA) MIN 300 200 150 140 0.5 0.5 0.5 0.6 10 10 5 5 30 30 10 10 40 40 60 60 KST92(2D) KST93(2E)

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™