HHS3T31 Search Results

BYX38-300

Abstract: BYX38 BYX38-300R
Contextual Info: IT N AMER PHILIPS/DISCRETE 2SE D H hhS3T31 □D22fiOcl b • BYX38 SERIES ' 7= 01-/7 SILICON RECTIFIER DIODES Silicon rec tifie r diodes in D O -4 m etal envelopes, intended fo r use in po w er re c tifie r ap plicatio ns. Th e series consists o f the fo llo w in g types:

BUZ50B

Abstract: T0220AB 2SC252
Contextual Info: N AMER PHILIPS/DISCRETE OhE D PowerMOS transistor m ” hhS3T31 001MSb3 L BUZ50B W May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching

Contextual Info: N AMER PHILIPS/DISCRETE 90D 10592 1DD D • D T '0 3 - £ . l 00105=12 2 B Y V 23 SERIES SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—5 metal envelopes, featuring low forward voltage drop, low capacitance, absence o f stored charge and high temperature stability. They are

BYV118-35

Abstract: M3174 BYV118 M3178
Contextual Info: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

BFG195

Abstract: 5609 transistor transistor 5609 5609 npn transistor 5609 npn 5609 6 LC 0703 transistor 702 Z TRANSISTOR MSB037 5609 t transistor
Contextual Info: Philips Semiconductors bb53S31 □ □ 3 1 3 3 li 314 M APX Product specification NPN 7 GHz wideband transistor — ^ DESCRIPTION BFG195 N AUER PHILIPS/DISCRETE b'lE ]> PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

Contextual Info: TIP30; A TIP30B; C _ A SILICON EPITAXIAL BASE POWER TRANSISTORS PNP silicon transistors in a plastic envelope intended fo r use in output stages of audio and television amplifier circuits where high peak powers can occur.NPN complements are TIP29 series.

marking code 11G1

Contextual Info: • bbSB'iai 0024733 3T3 « A P X N AMER PHILIPS/DISCRETE BF990A b7E » SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for UHF applications, such as UHF television tuners with 12 V

MSB11900Y

Abstract: philips ic power amplifier
Contextual Info: N AMER PH ILIPS/DI SCRE TE OLE D • bh53iBl DDlSQb? & ■ MSB11900Y T - 3 3 - is r PULSED M ICROW AVE PO W ER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at

Contextual Info: • bbSBisi ooaMsm boa bapx N AMER PHILIPS/DISCRETE BCV29 BCV49 b7E D J V SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal darlington transistors, housed in a microminiature envelope S089 . PNP complementary types are BCV28/48. QUICK REFERENCE DATA BCV29