HIGH SPEED DOUBLE DRAIN MOSFET Search Results

MYXM21200-20GAB

Abstract: silicon carbide
Contextual Info: SiC Power MOSFET Double 1200 Volt 20 Amp Hermetic MYXM21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low RDS on • High voltage 1200V isolation in a small package

Contextual Info: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •

sc1142

Abstract: diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW SC1205 sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010
Contextual Info: S^SEMTECH WA S' 4WMW PRELIMINARY - December 7, 1999 SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power

sc1142

Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power

HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
Contextual Info: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED

sc1142

Abstract: r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405B SC1405TS
Contextual Info: 3 E |W |T E C H JPy ^ December 16, 1999 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER SC1405B TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1405B is a Dual-MOSFET Driver with an inter­ nal Overlap Protection Circuit to prevent shoot-through

Contextual Info: Power MOSFET Construction and Characteristics Power MOSFET in Detail 2. Construction and Characteristics Since Power MOSFETs operate principally as majority carrier devices, adverse influences are relatively small magnitude or importance. This is in contrast to the situation with minority carrier

BUZ MOSFET

Contextual Info: bOE D 3133107 SEMELAB PLC G0GDS42 2G3 • SMLB - " T S f l - Z 5 r r MAGNA TEC BUZ 905D BUZ 906D NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SWITCHING

Contextual Info: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,

ir703

Abstract: IR7811 1N5819 30BQ015 SC1405 SC1405TS FDP6035 fet c42
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

ir703

Abstract: SC1405 1N5819 30BQ015 SC1405TS IR7030 IR7811
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 26, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

SANYO 1000uF 16V CA

Abstract: high power fet amplifier schematic IR7811 SANYO 1000uF 35V FDB7030 AC Motor Speed Controller capacitor 10u 16v capacitor 1u 16v sanyo capacitor 1000uf 25v SC1405
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER August 31, 2000 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405 is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

Contextual Info: BUZ900DP BUZ901DP M ECHANICAL DATA Dimensions in mm N-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING

n-channel 250w power mosfet

Contextual Info: BUZ900D BUZ901D IVI A CB INI A M ECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

BUZ905D

Contextual Info: BUZ905D BUZ906D IVI A CB INI A MECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V • HIGH ENERGY RATING

buz906dp

Contextual Info: BUZ905DP BUZ906DP M ECHANICAL DATA Dimensions in mm P-CHANNEL POWER MOSFET 5 .C POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE 160V & 200V) • HIGH ENERGY RATING

sc1142

Abstract: sanyo a75 amplifier IR7811 a106 diode SC1142CSW surface mount A106 diode B85 diode A107 capacitor B91 02 diode A116 diode
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER December 16, 1999 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

Contextual Info: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal

sc1142

Abstract: a106 diode B118 Mos-fet a106 capacitor surface mount A106 diode B85 diode sanyo a75 amplifier MOSFET A13 IR7811 PIN112
Contextual Info: HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER March 14, 2000 SC1405B TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION The SC1405B is a Dual-MOSFET Driver with an internal Overlap Protection Circuit to prevent shoot-through from VIN to GND in the main switching and synchronous MOSFET’s. Each driver is capable of driving

Contextual Info: BUZ900D BUZ901D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

7030BL

Abstract: 300 Volt mosfet schematic circuit 1205S 1N4148 LL42 SC1205 SC1205CS high speed mosfet driver Class-D DOUBLE FET
Contextual Info: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns

7030BL

Abstract: fb 4710 1205S 1N4148 LL42 SC1205 SC1205CS
Contextual Info: SC1205 High Speed Synchronous Power MOSFET Driver POWER MANAGEMENT Description Features K Fast rise and fall times 15ns typical with 3000pf The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns

buz901dp

Contextual Info: BUZ900DP BUZ901DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • N–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED

Contextual Info: BUZ905DP BUZ906DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2 3 • HIGH SPEED SWITCHING 2.0 2.0 • P–CHANNEL POWER MOSFET 1.0 • SEMEFAB DESIGNED AND DIFFUSED