HLG09283 Search Results

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

TLE4966K

Abstract: TSOP6 AEA03645 HLG09283
Contextual Info: Data Sheet, Rev. 1.0, September 2007 TLE4966K High Precision Hall-Effect Switch with Direction Detection Sensors Edition 2007-09 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

SMD MARKING d36

Abstract: BSL802SN HLG09283 JESD22-A114 L6327
Contextual Info: BSL802SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 22 mΩ V GS=1.8 V 31 ID 7.5 A • Avalanche rated • Qualified according to AEC Q101

BSL207N

Abstract: HLG09283 JESD22-A114 L6327
Contextual Info: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101

BSL214N

Contextual Info: BSL214N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 ID 1.5 A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSL806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101

JESD22-C10-HBM

Abstract: A70 SMD
Contextual Info: BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 25 mΩ V GS=4.5 V 38 ID 7.1 A • Avalanche rated • dv /dt rated PG-TSOP-6 • Pb-free lead plating; RoHS compliant

Contextual Info: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP6 • Qualified according to AEC Q101

BSL207N

Abstract: D-21A
Contextual Info: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101

bsl307sp

Contextual Info: BSL307SP Rev 1.5 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5

marking 8d

Abstract: marking 8E 8d4f marking IBW 8D marking MARKING 3B
Contextual Info: 3B=*'/@6 # <?5" # & E $  & 9 -8 8& 53: -8'=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ 9I S  G4? * 6;4AA8? ' 9I"^]#$\Pf S  A;4A68@ 8AF@ B78 S & B: <6 ?8H8?   / D4F87 %+ K ) =I / 0( \" ) =I   / )+( $9 %*&( 6 S  -  CDBF86F87 F=%JIEF%. S + G4?<9<87 466BD7<A: FB    +

BSL215C

Abstract: HLG09283 L6327
Contextual Info: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

Contextual Info: BSL307SP Rev 1.6 OptiMOS-P Small-Signal-Transistor Feature Product Summary • P-Channel VDS -30 V • Enhancement mode RDS on 43 mΩ • Logic Level ID -5.5 • 150°C operating temperature A PG-TSOP-6-1 • Avalanche rated • dv/dt rated 4 3 2 1 5

Contextual Info: TLE4966-2K High Precision Hall Switch with two Outputs Datasheet Rev.1.0, 2010-06-28 Sense & Control Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

55b7

Abstract: C89T marking BM marking A9
Contextual Info: 3B=* ,@ # <?5" # & E $ & 9 -88& 53: -8 '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ ;J T  H5@ + 7<5BB9@ ' ;J"_^#$]Qg T B<5B79A 9BGA C89 %+( L ) >J 0 )-( ]" ) >J   0 */( $; T ' C;=7 @9I9@   0 E5G98 %)&- 7 T  I5@5B7<9 E5G98 G>%KJFG%. T , H5@=:=98 577CE8=B; GC 

CH 8i

Contextual Info: 3C=/'-? @Y\R>@Cb ' : .99' 64;.9 >.;?6?@<> % ><1 A0@' A: : .>E 7NJ\]ZN[ ;J U  I6A) 8=6CC: A ' ;J"`_#$^Rh U C=6C8: B : CHB D9: U 0 AHF6 ' D<> 8 A: J: A  1 F6H: 9 *( M ) >J   1 -/ ^" ) >J  1 0* $; *&+ 7 U  J6A6C8=: F6H: 9 U , I6A> ;> : 9 688DF9>

BSL315P

Abstract: JESD22-A114 L6327
Contextual Info: BSL315P OptiMOS -P 2 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode -30 V V GS=10 V 150 mΩ V GS=4.5 V 270 ID • Logic level (4.5V rated) -1.5 • Avalanche rated A PG-TSOP-6 • Qualified according to AEC Q101

BSL314PE

Abstract: JESD22-A114 L6327
Contextual Info: BSL314PE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V DS • Dual P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 140 mΩ V GS=-4.5 V 230 ID -1.5 A • ESD protected PG-TSOP-6 • Qualified according AEC Q101

BSL308C

Abstract: HLG09283 L6327
Contextual Info: BSL308C OptiMOS P3 + Optimos™ 2 Small Signal Transistor Product Summary Features P N -30 30 V V GS=±10 V 80 57 mΩ V GS=±4.5 V 130 93 -2.0 2.3 • Complementary P + N channel · Enhancement mode V DS · Logic level 4.5V rated R DS(on),max · Avalanche rated

AEA03645

Abstract: PG-SSO-41 4966B AEA03255 AEP03646 HLG09283 TLE4966H TLE4966L
Contextual Info: Da ta Sh e et , V 1 .1 , Oct o be r 20 0 5 TLE4966H TLE4966L High Precision Hall-Effect Switch with Direction Detection Sen s ors Edition 2005-10 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.

Contextual Info: BSL207N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 70 mΩ V GS=2.5 V 110 ID 2.1 A • Avalanche rated • Qualified according to AEC Q101

Contextual Info: BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 ID 2.5 A • Avalanche rated • Qualified according to AEC Q101

JESD22-A114

Abstract: BSL306N HLG09283 L6327
Contextual Info: BSL306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated PG-TSOP-6 • Qualified according to AEC Q101

BSL205N

Abstract: D-195 HLG09283 JESD22-A114 L6327
Contextual Info: BSL205N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • Dual N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 20 V V GS=4.5 V 50 mΩ V GS=2.5 V 85 ID 2.5 A • Avalanche rated • Qualified according to AEC Q101