HM621864H Search Results

Contextual Info: HM621664H/HM621864H Series 65536-word x 16/18-bit High Speed CMOS Static RAM HITACHI Description The HM621664H/HM621864H is an asynchronous high speed static RAM organized as 64-kword x 16/18bit. It realize high speed access time 20/25 ns with employing 0.8 |im CMOS process and high speed circuit

HM621864HB

Abstract: HM621864HBJP-15 HM621864HBJP-20 HM621864HBLJP-15 HM621864HBLJP-20 Hitachi DSA0044
Contextual Info: HM621864HB Series 1 M High Speed SRAM 64-kword x 18-bit ADE-203-739A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword × 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit designing

Contextual Info: HM621664H / HM621864H Series 65,536-word x 16/18-bit High Speed CMOS Static RAM HITACHI The H M 6 2 1 6 6 4 H /H M 6 2 1 8 6 4 H is an asynchronous high speed static RAM organized as 64-kword x 16/18-bit. It realize high speed access tim e 20 /2 5 ns w ith em p lo y in g 0.8 pm C M O S

03CZ

Abstract: 09CZ A14EZ
Contextual Info: HM621864HB Series 65536-word x 18-bit High Speed CMOS Static RAM HITACHI ADE-203-739 Z Preliminary Rev. 0.0 Feb. 6, 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword x 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 fim CMOS process and high speed circuit designing

Contextual Info: HM621664H/HM621864H Series 65536-word x 16/18-bit High Speed CMOS Static RAM HITACHI Description The HM621664H/HM621864H is an asynchronous high speed static RAM organized as 64-kword x 16/18bit. It realize high speed access time 20/25 ns with employing 0.8 |im CMOS process and high speed circuit

HM621664HJP-20

Abstract: HM621664HJP-25 HM621664HLJP-20 HM621664HLJP-25 HM621864HJP-20 HM621864HJP-25 HM621864HLJP-20 HM621864HLJP-25
Contextual Info: HM621664H/HM621864H Series 65536-word x 16/18-bit High Speed CMOS Static RAM The HM621664H/HM621864H is an asynchronous high speed static RAM organized as 64-kword × 16/18-bit. It realize high speed access time 20/25 ns with employing 0.8 µm CMOS process and high speed circuit designing

HM621664HJP

Abstract: HM621864HLJP-15
Contextual Info: HM621664H/HM621864H Series Preliminary 6 5 5 3 6 -w o rd x 1 6 /1 8 -b it H ig h S pe ed C M O S S ta tic RAM T h e H M 6 2 1 6 6 4 H / H M 6 2 1 H 6 4 H is an a s y n c ro n o u s O rdering Inform ation h ig h s p e e d static R A M o r g a n i z e d as 64 k w o r d x

HM621864HB

Abstract: HM621864HBJP-15 HM621864HBJP-20 HM621864HBLJP-15 HM621864HBLJP-20 HM621864HB-20 Hitachi DSA00180
Contextual Info: HM621864HB Series 65536-word x 18-bit High Speed CMOS Static RAM ADE-203-739 Z Preliminary Rev. 0.0 Feb. 6, 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword × 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 µm CMOS process and high speed circuit designing

Contextual Info: HM621864HB Series 65536-word x 18-bit High Speed CMOS Static RAM HITACHI ADE-203-739 Z Preliminary, Rev. 0.0 Feb. 6, 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword X 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing

HM621664HJP-20

Abstract: HM621664HJP-25 HM621664HLJP-20 HM621664HLJP-25 HM621864HJP-20 HM621864HJP-25 HM621864HLJP-20 HM621864HLJP-25
Contextual Info: HM621664H/HM621864H Series 65536-word x 16/18-bit High Speed CMOS Static RAM Description The HM621664H/HM621864H is an asynchronous high speed static RAM organized as 64-kword × 16/18bit. It realize high speed access time 20/25 ns with employing 0.8 µm CMOS process and high speed circuit

Contextual Info: HM621864HB Series 1 M High Speed SRAM 64-kword x 18-bit HITACHI ADE-203-739A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM621864HB is an asynchronous high speed static RAM organized as 64-kword x 18-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am CMOS process and high speed circuit designing

Contextual Info: HM621664H/HM621864H Series — — Preliminary 65536-word x 16/18-bit High Speed CM O S Static RAM T he H M 621664H /H M 621864H is an asyncronous high speed static R A M organized as 64 kw ord x 1 6 /1 8 b it. It r e a liz e h ig h s p e e d a c c e s s tim e

Contextual Info: flPR 2o ms HM621864H Series Preliminary 65536-Word X 18-Bit High Speed CMOS Static RAM H IT A C H I The HM621864H is an asyncronous high speed static RAM organized as 64 kword x 18 b it It realize high speed access time 15/20/25 ns with employing 0.8 pm CMOS process and high speed

65536-word

Abstract: 8192-WORD SRAM
Contextual Info: Contents • L in e U p o f H ita c h i IC M e m o r i e s . 7 • P a c k a g e In f o rm a tio n s .

HM6287HL-35

Abstract: HM62256BL-10 HM628128AL-5 HM6264AL-15 HM6287-70 HM621100AL-20 SP 1191 hm6285128 HM62V256L-8 HM658128
Contextual Info: Quick Reference Guide to Hitachi IC Memories Contens MOS RAM MOS Static RAM Static RAM Module MOS Pseudo Static RAM Application Specific Memory Synchronous Graphic RAM Dynamic RAM Module MOS Dynamic RAM Synchronous Dynamic RAM MOS ROM MOS Mask ROM MOS EEPROM

SC 2272

Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in

Contextual Info: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series

4096 RAM

Abstract: 8 bit memory ic 16 BIT WORD STATIC RAM "Video RAM" 524,288 9bit HM658512 DYNAMIC RAM 16384-WORD HM628512 RAM HM63021
Contextual Info: CONTENTS • Quick Reference Guide to Hitachi IC Memories . 7 • MOS RAM.

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

HN58C256 Series

Abstract: HN58V1001 hm514270a hm62256a HM628512 HN58C1001 Series DP-32 HN27C4096A HN62442 HM658512
Contextual Info: Package Information Contents Dual-in-line-Plastic Applicable Ics CERDIP Applicable Ics Zigzag-in-line Plastic Applicable Ics Flat Package Applicable Ics Chip Carrier Applicable Ics Package Information Dual-in-line Plastic Unit: mm • DP-18C 22.26 22.86 Max

eprom 2904

Abstract: L 4440 72-Pin SO-DIMM
Contextual Info: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.

HM6206

Abstract: 32Kx64
Contextual Info: SRAMs Cache Synchronous SRAMs P ackage P a rt N um b e r D e n i lt y O r g a n iz a tio n C y c le tim e / A c c e « » tim e (n e ) Max. Key F e a tu re LQ FP HM62C3232 1M 32K x32 9/10/12/15 Pipeline 100 HM62C3232FP-7 1M 32K x32 7 Pipeline 100 HM62C3232FP-8L

SC-606-B

Abstract: HM62256B MS-024BB HM6207H HM6208H HM6264B HM6287 HM6288 HM9264B 024bb
Contextual Info: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration of your circumstance. When you use the package that has the material variation, please write down the package name in a form in

eprom 2904

Abstract: 4502 C DRAM 64kx16
Contextual Info: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —