HM65262 Search Results

HM-65262C-5

Abstract: 65262 HM65262 HM-65262 HM-65262C-9
Contextual Info: HM65262 16K x 1 Very Low Power CMOS SRAM Introduction The HM 65262 is a very low power CMOS static RAM organized as 16384 x 1 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM 65262 are TTL compatible and operate from single 5V supply thus

6216 static ram

Abstract: T800 equivalent
Contextual Info: Œ \ H A R R HM-8816H I S S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January 1992 Features Description • Low Standby Supply C u rre n t.800|iA • Low Operating Supply C urrent. 400mA

Contextual Info: X H M - 6 5 2 6 2 /8 8 3 16K X 1 Asynchronous CMOS Static RAM January 1992 Features Pinouts • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Fast Access

hm 6203

Abstract: 841320 J20.C Package rm 6203
Contextual Info: HM-65262 HARRIS S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/85ns Max • Low Standby Current. 50|.iA Max

Contextual Info: M M a rc h l 1994 HM 65262 DATA SHEET 16 K x 1 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME COMMERCIAL : 70 ns max MILITARY/INDUSTRIAL : 70/85 ns (max) VERY LOW POWER CONSUMPTION ACTIVE: 110 mW(typ) STANDBY : 2.0 pW (typ) DATA RETENTION : 0.8 pW (typ)

HM1-65262-9

Contextual Info: HARRIS S E M ICON SECTOR f Ì> H U U S E M I C O N D U C T O R A R R MbE D • M3G2271 DD3Tlb7 5 * H A S HM-65262 I S 2 3 - 0 5 1 6 K x 1 Asynchronous CMOS Static RAM January 1992 Pinouts Features Fast A ccess T im e . . 70/85nsM ax

Contextual Info: HM-65262 HARRIS a S E M I C O N D U C T O R 16K x 1 Asynchronous CMOS Static RAM August 1996 Description Features • Fast Access T im e. 70/85nsM ax • Low Standby C urrent. 50|xA Max

Contextual Info: S h K S S « HM-65262/883 16K x 1 Asynchronous CM O S Static RAM August 1996 Features • Description T h is Circuit is P ro cessed in A cco rd a n ce to MIL-STD883 and is Fully Conform ant Under the P rovision s of Paragraph 1.2.1. • Fast A c c e s s T im e . 70/85nsMax

Creative IC CT 1975

Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
Contextual Info: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.

Contextual Info: HM-65262/883 S 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

PDIL20

Abstract: HM65664A PDIL24 LCC-28 HM65687A-5 HM65162-5 LCC28
Contextual Info: Tem ic S e m i c o n d u c t o r s Part Number l> Format Temperata» Power •; Raoge f ee> Supply Access -lime V Icc Operating im ) te c ■ Standby, (fBÂ) ' (OÁJ . Package . . 256 K High-Speed SRAM HM65756X-5 32 K X 8 0 to +70 4.5 to 5.5 20 to 55 20

HM-65262C-5

Abstract: c9285
Contextual Info: 4RE » • SôtôMSb DDG1307 SSI ■ H M H S _ _ Ììllll I r T H I MATRA M H S September 1990 "T = - 4 { û - 2 J ï r - C Ô HM 65262 DATASHEET 16 k X 1 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max)

sxxxx

Contextual Info: æ H A « « H M - 6 5 2 2 /8 8 3 16K x 1 Asynchronous CMOS Static RAM January 1992 Features • 6 Pinouts This Circuit Is Processed In Accordance to Mtl-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. HM1-65262/883 CERAMIC DIP

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

smd transistor A13

Abstract: A9 transistor SMD 29103BRA 29109BRA 8413201RA 8413201YA 8413203RA 8413203YA HM1-65262-9 HM1-65262B-9
Contextual Info: HM-65262 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/85ns Max The HM-65262 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil Advanced

S-80141ALMC notes

Contextual Info: H A SEMICOND S E C T O R TS Ï Ë| 4 3 0 5 S 7 1 0 0 1 D 7 S S R R I S 16K x 1 Asynchronous CMOS Static RAM □ HM-65262 HARRIS Pinouts Features TOP VIEW • Low Standby C u rre n t. 50//A

LH5167-55

Abstract: HM65261S-5 HM65262B HY61C67-35 HY61C67-55 HY61C67-70 HY61C67L-25 HY61C67L-35 16384x1 ram 16384x1
Contextual Info: - 36 - 16K A 4 m % a TAAC £ °C (ns) TCAC max (ns) TOE max (ns) •/ TOH min (ns) C MOS S t a t i c RAM (1 6 3 8 4 x 1 ) m f TOD max (ns) TWP min (ns) TDS rein (ns) TDH min (ns) TWD (ns) TWR max (ns) V D D or V C C I DD max (raA) (V) 2 0 P I N À M I )D STANDBY

Contextual Info: f il H U U S E M I C O N D U C T O R A R R IS HS-65C262RH/RRH HS-65T262RRH Radiation Hardened 16K x 1 CMOS RAM December 1992 Pinouts Features • Radiation Hardened EPI-CMOS • Total Dose 2 x 10s RAD Sl • Transient Upset > 5 x 108 RAD(Siys - Latch-up Free > 1 x 101* RAD(Siys

Contextual Info: IlM l DATA SHEET_ HM 65262 16 Kx 1 VERY LOW POWER CMOS SRAM FEATURES . 300 MILS WIDTH PACKAGE . TTL COMPATIBLE INPUTS AND OUTPUTS . ASYNCHRONOUS . SINGLE 5 VOLT SUPPLY . EQUAL CYCLE AND ACCESS TIME . GATED INPUTS : NO PULL-UP/DOWN

Contextual Info: Inllll I V l M September 1989 DATA SHEET_ HM 65262 16 k x 1 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) . VERY LOW POWER CONSUMPTION ACTIVE : 110 mW (typ)

Contextual Info: ¡2 HM-65262 H A R R IS 16K x 1 Asynchronous CMOS Static RAM Pinouts Features T O P VIEW • Low Standby C u rre n t. 50//A • Low Operating C u rre n t. 50m A

6216 static ram

Abstract: 6216 ram
Contextual Info: m U U HM-8816H HARRIS S E M I C O N D U C T O R 16K x 8 High Speed Asynchronous CMOS Static RAM Module January1992 Features Description The HM-8816H is a high speed, asynchronous CMOS static RAM module, based on a multilayer, co-fired, dual-in-line ceramic substrate and eight HM-65262 16K x 1 asynchro­

128X128

Abstract: HM-65262 hm65262
Contextual Info: HM-65262/883 Semiconductor 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Ran­

HM1-65262

Abstract: HM-65262
Contextual Info: HM-65262/883 16K x 1 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65262/883 is a CMOS 16384 x 1-bit Static Random Access Memory manufactured using the Intersil