HONEY TECHNOLOGY Search Results

Contextual Info: MSS1Û7S GÜG1D12 flSb « H 0 N 3 b3E D Honeywell HONEYùlELL/S S E C Advance Information 64K X 16 RADIATION-HARDENED SRAM HC81610 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Full military temperature operation -55°C to 125°C

Contextual Info: honeyüjell/ s s e c 3ÛE D • 4-S S I 0 7 5 □ Q nQ b‘13 7 ■ I H0N3 VDTDemod Preliminary VARIABLE DIFFERENTIAL TRANSFORMER DEMODULATOR This is a Boeing owned design manufactured by Honeywell FEATURES OTHER Programmable electronic interface between a LVDT

Contextual Info: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02

t4423

Contextual Info: HONEY WEL L DIGITAL PRODUCT hb D E j MSS14S3 OQOOOlfl 0 T-44-23' S AUGUST 1985 16K x 1 STATIC RAM HC6167R PRODUCT DESCRIPTION FEATURES The HC6167R is a 16,384-word by 1-bit static Random Access Memory RAM designed for strategic and tactical military applications. The HC6167R is fabricated

HR2340

Abstract: sram pull down honeywell memory sram
Contextual Info: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec

tantalum capacitor case b avx

Abstract: AVX Tantalum Capacitance
Contextual Info: A W O R L D O F A D V A N C E D Honey, I shrunk the tantalums C O M P O N E N T S AVX is the first to deliver the industry’s smallest 0603 tantalum capacitor. The revolutionary TAC microchip packs 10 times more capacitance value than traditional tantalum technology, while reducing ESR by 3.5 times.

harris 6616

Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02

Contextual Info: HONEYÜI ELL/ S S E C 3ÖE D D 4SS1Ô72 GQOOSSfl 1 HH0N3 Advance Information 16K x 1 MAGNETORESISTIVE RAM MRAM T ^ fc -^ -O S T FEATURES Non-volatile 250 ¡as Read Cycle Time Fabricated with RICMOS 1.2 |am Process 400 ns Write Cycle Time Write Cycles in Excess of 1x1015

HM3500

Contextual Info: HONEYüJELL D I G I T A L P R O D U C T bt De | 4 S S m S 3 □□0DD73 7 | T-42-11-15 MAY 1985 HM3500 ECL/TTL GATE ARRAY PRELIMINARY PRODUCT DESCRIPTION The HM3500 Figure 1 is a 400 picosecond, 3500 equivalent gate density VLSI monolithic integrated circuit using Honeywell’s ADB-II fabrication process.

Contextual Info: b3E D • Honeywell 4 S 5 1 Û 7 2 G Q D 1 1 G 1 151 « H O N B MAGNETIC FIELD SENSORS honeyüiell / s s e c DESCRIPTION SSEC permalloy magnetic field sensors provide an unmatched ability to trade off size, power consumption, and sensitivity. They are fabricated by depositing a thin film of nickel-iron onto a silicon substrate which can have a simple

Honey Technology

Abstract: MCL245 55199
Contextual Info: MCL245 SILICON EPITAXIAL PLANAR DIODE Absolute Maximum Ratings Ta= 25°C Symbol Value Unit Reverse Voltage VR 220 V Peak Reverse Voltage V rm 250 V Mean Rectified Current lo 200 mA Maximum Forward Current Ifm 625 mA Surge Forward Current at t<1s and Tj= 25°C

ZENER DIODE 0.5W 3.7 V

Abstract: voltage regulation diode 8.2 v 1w Zener diode 183 39 77 zener diode Honey Technology ZM-PTZ10B ZENER DIODE 15W ZM-PTZ12B ZM-PTZ13B ZM-PTZ16B
Contextual Info: ZM-PTZ3.6B ~ ZM-PTZ36B SILICON EPITAXIAL PLANAR ZENER DIODES LL-41 Features 1 Small surface mounting type 2) 1W of power can be obtained despite compact size 3) High surge withstand level Applications 1) Voltage regulation and voltage limiting 2) Voltage surge absorption

MCR100

Abstract: MCR100-8 Honey Technology transistor mcr100-6 MCR100-7 MCR100-3 MCR100-4 MCR100-5 MCR100-6
Contextual Info: MCR100-3 … MCR100-8 G K A TO-92 Plastic Package Weight approx. 0.18g MAXIMUM RATINGS TJ=25°C unless otherwise noted. Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage, Note 1 MCR100-3 (TJ=25 to 125°C, RGK=1KΩ) MCR100-4 VDRM

Honey Technology

Abstract: carton box 1N-SS254 0092G SEMTECH LABEL SS-254 ss254 HONEY
Contextual Info: 1N-SS254 HIGH-SPEED SWITCHING DIODE Features • Ultra-high speed. • High withstand voltage. • Low leakage and high voltage. Weight approx. 0.092g Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak reverse voltage VRM 40 V Reverse voltage VR 35

BZT33

Abstract: Bzt30 BZT200 BZT36
Contextual Info: BZT2.0 . BZT200 Silicon Planar Zener Diodes in Mini Melf case especially for automatic insertion. The Zener voltages are graded according to the international E24 standard. Other tolerance, non standard and higher Zener voltages upon request. These diodes are delivered

DIODE 1N34A Reverse resistance

Abstract: diodes 1N34A DIODE 1N34A 1n34a germanium diode 1n34a diode 1N34A diode germanium 1N34A germanium point contact diode n34a Honey Technology
Contextual Info: 1N34A POINT CONTACT GERMANIUM DIODE The germanium point contact Ge diodes are widely used For detecting the rectifying efficiency or for switching on the radio, TV, or stereo, ect. max. 03. 2 L Features • High reliability for resistance to vibration and shock proof.

LL700

Abstract: LL700A Honey Technology
Contextual Info: LL700, LL700A SILICON EXPITAXIAL PLANAR TYPE SCHOTTKY BARRIER DIODES for Ordinary Wave Detection for Super High Speed Switching Features • Low forward rise voltage VF and satisfactory wave • detection efficiency (η) • Small temperature coefficient of forward characteristic

zener barrier

Abstract: Gems Sensors 202530 MIR-800 wave guide radar sensor Types of Radar Antenna radar level sensor MIR-900
Contextual Info: MIR-900 Series – Flexible Dual Rod  Highly Repeatable  Lengths to 12 Feet  Tefzel  Ideal Wave Guide Encapsulation for Coating/Viscous Liquids MIR-900 Series sensors handle tank depths to 12 feet, but more important for some will be the ability of this series to deliver

student

Contextual Info: mexictst.qxd 6/16/00 9:12 AM Page 1 Going Mobile Instituto Tecnológico y de Estudios Superiores de Monterrey Monterrey Tech Called “the MIT of Mexico” in the Wall Street Journal, the Monterrey Institute of Technology and Higher Education claims to be the most wired university in

sensor Flow meter PNP

Abstract: sensor DN15 npn transistor dc 558 en 175301-803 burkert s070 DD0-2 transistor 1451 "Flow Sensor" DN25 DN50
Contextual Info: 8070 Positive displacement Flow sensor for continuous flow measurement • High accuracy • Medium with high viscosity • Mounting and dismounting of the sensor head by a quarter-turn • Connection to Bürkert devices in remote versions Type 8070 can be combined with.

erni 32 pins connector

Abstract: erni minibridge 1.27 connectors M12 connector PCB AWG30 ITS 7166 erni smc
Contextual Info: New Products 2009 On the right track. www.erni.com With ERNI, you’re heading in the right direction. You set the pace. You know the feeling: When your navigation system tells you to turn around or your passenger has the map in his or her head, you have no time to look at

Qwik Connect

Contextual Info: Qwik Connect GLENAIR n o c t o b er 2010 VOLUME 14 n NUMBER 4 Electronica 2010 New Product Launch Extravaganza QwikConnect Electronica 2010, Munich, Germany New Product Launch Extravaganza Why CHOOSE Glenair? W illkommen! Glenair has a long history of interconnect system product innovation. We designed and

October 2010 QwikConnect

Contextual Info: Qwik Connect GLENAIR n OCTOBER 2010 VOLUME 14 n NUMBER 4 Electronica 2010 New Product Launch Extravaganza QwikConnect Electronica 2010, Munich, Germany New Product Launch Extravaganza W illkommen! Glenair has a long history of interconnect system product innovation. We designed and

WP_001 Connecting Peripherals to an Android Platform

Abstract: Android
Contextual Info: White Paper WP_001 Connecting Peripherals to an Android Platform Version 1.0 Issue Date: 2012-02-09 This white paper will describe some of the options for connecting peripheral accessories to Android OS based tablets/phones. The main focus will be the use of the Android Open Accessory Initiative.