HP83 Search Results

HP83000

Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
Contextual Info: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC

M16A

Abstract: RG-142 DS90CP22 DS90CP22M-8 HP70841B
Contextual Info: DS90CP22 2X2 800 Mbps LVDS Crosspoint Switch General Description Features DS90CP22 is a 2x2 crosspoint switch utilizing LVDS Low Voltage Differential Signaling technology for low power, high speed operation. Data paths are fully differential from input to output for low noise generation and low pulse width

Contextual Info: DS90LV001 www.ti.com SNLS067E – JANUARY 2001 – REVISED APRIL 2013 DS90LV001 800 Mbps LVDS Buffer Check for Samples: DS90LV001 FEATURES DESCRIPTION • • • • • • The DS90LV001 LVDS-LVDS Buffer takes an LVDS input signal and provides an LVDS output signal. In

DS90LV110

Abstract: DS90LV110T DS90LV110TMTC RG-142
Contextual Info: DS90LV110T 1 to 10 LVDS Data/Clock Distributor General Description Features DS90LV110 is a 1 to 10 data/clock distributor utilizing LVDS Low Voltage Differential Signaling technology for low power, high speed operation. Data paths are fully differential

HP8756A

Abstract: HP8350B HP8970B HP8562A HP8971C low noise amplifier ghz
Contextual Info: JXWBLA-T-1000-18000-38 1~18GHz Low Noise Amplifier Test report is for reference only. TEST REPORT for JXWBLA-T-1000-18000-38 Page 1 JXWBLA-T-1000-18000-38 1~18GHz Low Noise Amplifier Technical Specification 1-18 Frequency Range GHz 38 Gain(dB) Flatness(dB)

power amplifier 2-18GHZ

Contextual Info: JXWBLA-T-2000-18000-38 2~18GHz Low Noise Amplifier Test report is for reference only. TEST REPORT for JXWBLA-T-2000-18000-38 Page 1 JXWBLA-T-2000-18000-38 2~18GHz Low Noise Amplifier Technical Specification 2-18 Frequency Range GHz 38 min Gain(dB) ±2.5 max

Contextual Info: What H E W L E T T * mLliM P A C K A R D 6 -2 0 GHz High-Gain Amplifier Technical Data HMMC-5620 Features • Wide-Frequency Range: 6 - 2 0 GHz • High Gain: 17dB • Gain Flatness: ± 1.0 dB • Return Loss: Input -15 dB Output -15 dB • Single Bias Supply

HP83483A

Abstract: DS101053 EIA-644-1995 HP70004A
Contextual Info: DS90CP22 2X2 800 Mbps LVDS Crosspoint Switch General Description Features DS90CP22 is a 2x2 crosspoint switch utilizing LVDS Low Voltage Differential Signaling technology for low power, high speed operation. Data paths are fully differential from input to output for low noise generation and low pulse width distortion. The non-blocking design allows connection of any input

R114426

Abstract: BLM11P300S dipsw_4 232270296001 433003036301 Philips 2322-702-96001 BLM11P300 AN99071 STM16 TP97036
Contextual Info: APPLICATION NOTE OM5808 demoboard negative supply for 2.5 Gb/s TZA3014 / TZA3019 with HBCC package AN99071 TP97036.2/F5.5 Philips Semiconductors OM5808 demoboard negative supply for 2.5 Gb/s TZA3014 / TZA3019 with HBCC package Application Note AN99071 Abstract

J 5027 r

Contextual Info: W f ip l H E W L E T T mLftm P A C K A R D 2 - 2 6 . 5 Medium Pow er Amplifier Technical Data HMMC-5027 Features • Wide-Frequency Range: 2-26.5 GHz • Moderate Gain: 7 dB • Gain Flatness: 1 dB • Return Loss: Input -13 dB Output -11 dB • Low-Frequency Operation

Contextual Info: What HEWLETT* mLliM PA C K A R D 2 - 5 0 GHz D istributed Amplifier Technical Data HMMC-5025 Features • Frequency Range: 2 - 5 0 GHz • Small Signal Gain: 8.5 dB • P-i<jb @ 40 GHz: 12 dBm • N oise Figure: < 6 dB @ 2 - 35 GHz < 10 dB@ 3 5 -5 0 GHz • Return Loss: In/Out: < -10 dB

CK 1636

Abstract: ethernet parallel converter
Contextual Info: í m HEWLETT PACKARD Gigabit Ethernet Transceiver Chip Preliminary Rev 1.23 04-22-97 , Subject to change without notice Features • IEEE 802.3z Gbit Ethernet compatible, Supports 1250 MBd Gigabit Ethernet • Based on X3T11 “10 bit specification” • Low Power Consumption

Contextual Info: What H E W L E T T * mLliM PACKARD DC - 8 GHz Terminated SPDT Switch Technical Data HMMC-2007 Features • Outputs Term inated in 50 il When Off • Frequency Range: DC-8 GHz • Insertion Loss: 1.2dB@ 8 GHz • Isolation: > 70 dB @ 45 MHz >35dB@ 8G H z • Return Loss:

AMT8301

Abstract: AMT8301T46F AMT8301T46L T46F ASE noise filter MSM photodetector
Contextual Info: AMT8301 2.125 Gb/s Integrated 850nm MSM-TIA Data Sheet - Rev 0 FEATURES • Differential Output TIA · 3.3V Operation · Automatic Gain Control · Integrated 850nm MSM Detector & TIA · TO-46 Ultra Flat-Window or Lens Hermetic Package · High Reliability APPLICATIONS

diode hp 2970

Contextual Info: 1 2– 26.5 GHz GaAs MMIC Traveling Wave Amplifier Technical Data HMMC-5021 2-22 GHz HMMC-5022 (2-22 GHZ) HMMC-5026 (2-26.5 GHz) Features • Wide-Frequency Range: 2 - 26.5 GHz • High Gain: 9.5 dB • Gain Flatness: 0.75 dB • Return Loss: Input: -14 dB

HP-1668

Abstract: HP8157A lm385 IC circuit diagram SC Duplex Jumper
Contextual Info: 2488 Mb/s Single Mode Fiber Transceiver for SONET OC-48/SDH STM-16 and ATM Technical Data HFCT-5402D Features Applications • 1300 nm Single Mode Transceiver for SONET/SDH Short Reach Links • Compliant with proposed ATM Forum 2488 Mb/s Physical Layer Specification

DS90LV001

Abstract: DS90LV001TLD DS90LV001TM M08A
Contextual Info: DS90LV001 3.3V LVDS-LVDS Buffer General Description The DS90LV001 LVDS-LVDS Buffer takes an LVDS input signal and provides an LVDS output signal. In many large systems, signals are distributed across backplanes, and one of the limiting factors for system speed is the "stub length" or

R114426

Abstract: BLM11P300S 3006P 201 PHILIPS 433003036301 Philips 2322-702-96001 433003036301 dipsw_4 HLMP6500-011 siemens c45 Stocko R5
Contextual Info: APPLICATION NOTE OM5809 demo board positive supply for 2.5 Gb/s TZA3014 / TZA3019 with HBCC package AN01023 TP97036.2/F5.5 Philips Semiconductors OM5809 demo board positive supply for 2.5 Gb/s TZA3014 / TZA3019 with HBCC package Application Note AN01023 Abstract

HP83712B

Abstract: E5052 LMK02000 LMK03000C LMK03001C SCAN25100 AN 1734
Contextual Info: 美国国家半导体公司 应用注释1734 Dean Banerjee 2007年10月 本应用注释以SCAN25100 SERDES和LMK03001C时钟 引言 在有线通信中，需要从数据中恢复时钟。将时钟编码到 数据中的优点是可以省却发送时钟的线路，也有助于处理偏

T056

Abstract: MSM photodetector AMT128503 AMT128503T46F AMT128503T46L AMT128503T56F
Contextual Info: AMT128503T46F AMT128503T46L AMT128503T56F 1.25 Gb/s Integrated 850 nm MSM-TIA Preliminary Data Sheet - Rev. 0 FEATURES • • • • • • • 1.25 Gb/s Differential Output TIA 3.3V Operation Automatic Gain Control 850nm Photodetector with 100 µm x 100 µm Active Area

HP7004A

Abstract: 1417K4A SLLU007A TLK2500 HP83480 BERT 240-1018-1-ND lucent laser 2.5 Gbps
Contextual Info: TLK2500 Serdes EVM Kit Setup and Usage User’s Guide March 2000 Mixed Signal Products SLLU007A IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information

AMT8504

Contextual Info: AMT8504 1.25 Gb/s Integrated 850 nm MSM-TIA Preliminary Data Sheet - Rev 0 FEATURES • Differential Output TIA · 3.3V Operation · Automatic Gain Control · Integrated 850nm MSM detector & TIA · 100m m Detector Diameter · TO-46 Ultra Flat Window or Lens

DTH11

Contextual Info: AMT8300T46F AMT8300T46L 2.5 Gb/s 850 nm Detector Preamp Advanced Product Information - Rev 1 FEATURES • · · · · 2.5 Gb/s Differential Output TIA 3.3V Operation Automatic Gain Control 850 nm Photodetector TO-46 Ultra Flat Window or Ball Lens Package APPLICATIONS

HP8341B

Abstract: HP4145 hp11612a 8970B TRANSISTOR noise figure measurements footprint transistor Plessey
Contextual Info: On Wafer Noise Measurement Using Bipolar Transistor RF Test Structures S.D. Connor Bipolar Characterization Group, Central R&D, G.E.C. Plessey Semiconductors, Tweedale Way, Oldham, Lancs OL9 7LA, England. Abstract:- We present here a technique for on wafer noise we measurements using bipolar R.F. cell structures. Measurements were taken