HSG1003VE Search Results
HSG1003VE Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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HSG1003VE- |
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TRANS GP BJT NPN 35V 0.035A 4CMPAK T/R | Original | 503.54KB | 38 | ||
HSG1003VE-E |
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TRANS GP BJT NPN 35V 0.035A 4CMPAK T/R | Original | 503.54KB | 38 |
HSG1003VE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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IC 751 1124
Abstract: str 1195 HSG1002 HSG1003 str 1229 FR 2407 IC str 1229 HSG1003VE
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Original |
HSG1003 REJ03G0197-0100Z IC 751 1124 str 1195 HSG1002 HSG1003 str 1229 FR 2407 IC str 1229 HSG1003VE | |
HSG1003Contextual Info: HSG1003 SiGeHBT High Frequency Low Noise Amplifier REJ03G0197-0200 Rev.2.00 Jan.25.2005 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.65 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 19 dB typ. , NF = 0.75 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz |
Original |
HSG1003 REJ03G0197-0200 Unit2607 HSG1003 | |
Contextual Info: HSG1003 SiGeHBT High Frequency Low Noise Amplifier REJ03G0197-0200 Rev.2.00 Jan.25.2005 Features • High power gain and low noise figure ; • MSG = 21 dB typ. , NF = 0.65 dB typ. at VCE = 2 V,IC = 5 mA, f = 1.8 GHz MSG = 19 dB typ. , NF = 0.75 dB typ. at VCE = 2 V,IC = 5 mA, f = 2.4 GHz |
Original |
HSG1003 REJ03G0197-0200 Emitt-900 Unit2607 | |
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
Original |
do-900 Unit2607 | |
HSG1003
Abstract: 789 0321 456 789
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Original |
d-900 Unit2607 HSG1003 789 0321 456 789 |