HVC133 Search Results

SMD MARKING P3

Abstract: marking SMD P3 transistor marking p3 smd rf transistor marking HVC133 smd marking c1 Diode marking P3
Contextual Info: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVC133 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low capacitance. C=1.0pF max max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=0.7 A b s o lu te M a x im u m R a tin g s T a = 2 5

Hitachi DSA00773

Abstract: HVC133
Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423A Z Rev 1 September 1996 Features • • • Low capacitance.(C1=1.0pF max) Low forward resistance. (rf=0.7Ω max) Ultra small Flat Package (UFP) is suitable for surface mount design.

IR1 DIODE

Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC131 HVC132 HVC133 HVM121WK HVM131S HVM131SR HVM132 HVM132WK HVM14 HVM14S HVM14SR HVM187S HVM187WK HVU131 HVU132 HVU133 HVU187 HVC200A HVC202A HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B

Contextual Info: H ITACHI HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching HITACHI ADE-208-423A Z Rev 1 September 1996 Features • Low capacitance.(C1=1 .OpF max) • Low forward resistance. (rf=0.7Q max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: Product specification HVC133 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low capacitance. C=1.0pF max max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=0.7 A b s o lu te M a x im u m R a tin g s T a = 2 5

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

Hitachi DSA002719

Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423A Z Rev 1 Features • Low capacitance.(C1 = 1.0pF max) • Low forward resistance. (rf = 0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching HITACHI ADE-208-423A Z Rev 1 Features • Low capacitance.(Cl = l.OpF max) • Low forward resistance, (rf = 0.7Cl max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: HVC133-Silicon Epitaxial Planar Pin Diode for High Frequency Switching Features Outline • Low capacitance. Cl=1.0pF max • Low forward resistance. 0f=0.7i2 max) • iiltra small Elat Package (UFP) is suitable for surface mount design.

HITACHI RF APPLICATION

Abstract: HVC133 DSA003642
Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B Z Rev. 2 Feb. 2000 Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Hitachi DSA002789

Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423A Z Rev 1 Features • Low capacitance.(C1 = 1.0pF max) • Low forward resistance. (rf = 0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

HVC133A

Contextual Info: HVC133A Silicon Epitaxial Planar Pin Diode for Antenna Switching REJ03G0170-0100Z Rev.1.00 Jan.21.2004 Features • An optimal solution for antenna switching in mobile phones. • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max)

Contextual Info: HVC133 ⋅ HVD133 ⋅ HVU133 Silicon Epitaxial Planar Pin Diode for High Frequency Switch Features • Low capacitance. C1 = 1.0 pF max • Low forward resistance. (rf = 0.7 Ω max) • Suitable for surface mount design by small size package line up. Ordering Information

HVC133

Abstract: Hitachi DSA0047
Contextual Info: HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B Z Rev. 2 Feb 2000 Features • Low capacitance.(C1=1.0pF max) • Low forward resistance. (rf=0.7Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

"ADE-508-010A"

Abstract: MIL-P-28809A Hitachi DSA0076 HITACHI DIODE HVB14S HVC132 HVD131 HVD132 HVM14 HVM14SR
Contextual Info: Hitachi PIN Diodes HITACHI ADE-508-010A 4/20/00 Causions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s

smd zener diode color code

Abstract: smd glass zener diode color codes smd glass diode color codes 358B 8 PIN IC smd zener color codes Zener diode smd marking code .18 6G zener diode 10 pages project on zener diode colour code diode zener HRC0203A
Contextual Info: Diodes for Mobile Communications Application Note ADE-508-016 Rev.0 Aug. 2001 Hitachi Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in

XM0830SJ

Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
Contextual Info: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

diode 368b

Abstract: HUV131 HUV132 HVC376B 358B diode varicap 5.8 Ghz hvc365 cross HVC 3-12 varicap diode c05 10 48 diode
Contextual Info: Tune your Circuits Mobile Phone Applications Hitachi’s range of Varicap and PIN diodes addresses the needs of todays mobile phone development engineers. A small package, wide tuning range, low operating voltage and low noise have made these diodes one of

HSK277

Contextual Info: INDEX .83 .217 .221 .85 .87 .89 .91 .93 . 95 .97 .99 .457 .227 .229 .231 .233 .459 . 101 . 103 . 105 .235 .237 .239 .241 . 107 . 109 .461 .243 .481 . 283 .285 .287 .290 .293 . 296 .298 . 300 . 303 . 305 .307 .309 .311 .313 . 315

BGT24MTR11

Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
Contextual Info: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: Section 3 Hitachi PIN Diode Product Line Table 3-1 and table 3-2 list the main applications and electrical characteristics of Hitachi PIN diodes, and figure 3-1 shows dimensional drawings of the packages used. Table 3-1 Attenuator Product Line • Electrical Characteristics Ta = 25°C

HVC133

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid