HY534256A Search Results

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

DRAM 256kx4

Abstract: HY534256A HY534256AJ HY534256ALJ dram memory 256kx4 256KX4
Contextual Info: HY534256A 256Kx4, Fast Page mode DESCRIPTION This family is a 1M bit dynamic RAM organized 262,144 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: HHYUIIPIH > — • HY534256A 2S6Kx4, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic R A M o rg a n iz e d 2 6 2 ,1 4 4 x 4 - b it c o n fig u ra tio n w ith F a st P age m o de CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: HYUNDAI H Y 534256A SEMICONDUCTOR S e rie s 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynam ic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide w ide operating

Contextual Info: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

SSO36

Abstract: HY534256ALS-60 HY534256A HY534256ALJ HY534256ALS WP133
Contextual Info: HY534256A Series "H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ic 7493 pin diagram

Abstract: TAA111
Contextual Info: •HYUNDAI HY534256A Series 2S6KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY5116400BT

Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
Contextual Info: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC

512X4

Abstract: AC07 H133 HY534256A ci 28448
Contextual Info: PRELIMINARY M 1 C 1 2 0 0 A -JA N 9 2 DESCRIPTION FEATURES The HY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI CMOS process, the HY534256A offers a fast page mode for high bandwide operation, fast

Contextual Info: HYUNDAI SEMICONDUCTOR H Y M 532512A 512K X S e r ie s 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532512A is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for each

Contextual Info: HY534256A Series ‘H Y U N D A I 256K x 4-bit CMOS DRAM DESCRIPTION ORDERING INFORMATION The HY534256A Series is a high performance CMOS fast dynamic RAM organized 262,144 x 4-bit configuration. The HY534256A utilized Hyundai CMOS silicon gate process technology as well as

5v RAS 0610

Abstract: RAS 0610 ah2j sh 604
Contextual Info: HY534256A Series -HYUNDAI 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: •HYUNDAI HY534256A 256Kx4, Fast Page mode DESCRIPTION T h is f a m ily is a 1 M b it d y n a m ic R A M o r g a n iz e d 2 6 2 , 1 4 4 x 4 - b it c o n f ig u r a t io n w ith F a s t P a g e m o d e C M O S DR AM s. Fast Page m ode offers high speed of random access m em ory w ith in the sam e row. The circu it and p ro cess design

Contextual Info: •HYUNDAI H YM 532512A SEMICONDUCTOR S e r ie s S12K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532512A is a 512K x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22|aF decoupling capacitor is mounted for each

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM532256A Series 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted fo r each DRAM.

RAS 0610

Abstract: 5v RAS 0610
Contextual Info: •HYUNDAI HY534256A Series SEMICONDUCTOR 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the new generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

HY534256A

Abstract: HY534256AJ HY534256ALJ
Contextual Info: •HYUNDAI HY534256A 256Kx4, Fast Page mode DESCRIPTION T h is fa m ily is a 1 M b it d y n a m ic RAM o rg a n iz e d 2 6 2 ,1 4 4 x 4 -b it c o n fig u ra tio n w ith F a s t P a g e m o d e C M O S DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

Contextual Info: HY534256A Series “ H Y U N D A I 256KX 4-bit CMOS DRAM DESCRIPTION ITie HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

ci 28448

Contextual Info: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION HY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI

BEDO RAM

Abstract: hy5118160b HY512264 HY5117404 HY5118164B
Contextual Info: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE

HY514260

Abstract: HY5117404A 164-04A 4m 300mil
Contextual Info: I' PRODUCT AVAILABILITY DRAM PRODUCT 1Mbit 2M bit 4Mbit DESCRIPTION PACKAGE OPTION ACCESS TIME ns - As of '96.3Q OPERATI!« CURRENT (mA,MAX) STA»IDBY CURI*ENT (rtiA, MAX) TTL CMOS AVAILABILITY 1M x 1 F a s t Pa ge HY531000A SOJ 60/7 0/80 85/7 5/65 2 1

r4kf

Abstract: HY53C464LS fr4k HY53C256LS HY531000J
Contextual Info: «HYUNDAI QUICK REFERENCE DRAM ORGANIZATION PARTNUMBER SPEEDfiw FEATURES PACKAGE 256K bit 256Kx 1) HY53C256S HY53C256LS HY53C256F HY53C256LF HY53C464S HY53C464LS HY53C464F HY53C464LF HY531000S HY531000J HY531000AS HY531000ALS HY531000AJ HY531000AU HY534256S

Contextual Info: PART NUMBER HYUNDAI DRAM PART NUMBERING HY XX X XX XXXX X XX XX - XX T HYUNDA I_! Memory Produrts : ! 7 !' T T | PRODUCT GROUP 51’ DRAM PROCESS & POWER SUPPLY BLANK CMOS 5 0V V CMOS, 3.3V DATA WIDTH for 1M BLANK : x1 4 x4 DENSITY for 4M/16M

AUO-PL321.60

Abstract: HY51V18164B HY514264 HY514260
Contextual Info: -HYUNDAI QUICK REFERENCE GUIDE DRAM ORDERING INFORMATION ORGANIZATION 1M bit 1Mx1 PART NUMBER HY531000AS HY531000ALS HY531000AJ HY531000ALJ SPEED(ns) 60/70/80 60/70/80 60/70/80 60/70/80 FEATURES F/P F/P, L-part F/P F/P, L-part PACKAGE 1Spin PDIP 18pin PDIP