4B75OAA Search Results

Contextual Info: «HYUNDAI HYM564404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT _ DESCRIPTION The HYM564404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5116404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01

Contextual Info: HYUNDAI HY5117410 Series SEMICONDUCTOR 4M X 4-bit CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5117410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5117410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced

Contextual Info: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F

Contextual Info: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.

Contextual Info: ♦HY UNDAI SEMICONDUCTOR HYM59256A Series 256K X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM59256A is a 256K x 9-bit Fast page mode CMOS DRAM module consisting of two HY534256 in 20/26 pin SOJ and one HY53C256 in 18 pin PLCC on a 30 pin glass-epoxy printed circuit board. 0.2^«F decoupling capacitor

hy57v168010a

Abstract: hy57v168010 HY57V164010 hy57v168010altc HY57V161610 hy57v16801 hy57v161610a MDQ13 M1023 OV9653
Contextual Info: 16Mbit Synchronous DRAM Series 'HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 are high speed 3.3 Volt synchronous dynamic RAMs

512Kx1+DRAM

Contextual Info: HY514100B Series •HYUNDAI 4M X 1 -b lt CMOS DRAM PRELIMINARY DESCRIPTION The HY5141OOB is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. th e HY514100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

Contextual Info: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also

Contextual Info: HYM540A410 M-Series •HYUNDAI 4M x 40-bit C M O S DRAM MODULE P R ELIM IN A R Y DESCRIPTION The HYM540A410 is a 4M x 40-bit Fast page mode C M O S DRAM module consisting of ten HY5117400 in 24/28 pin SO J or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22jiF decoupling capacitor is mounted for

Contextual Info: •HYUNDAI H Y 5 2 1 6 2 5 7 256K x S e r ie s 16-bit Video RAM with 2WE Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.