HYB3117400 Search Results

smd marking AAAA

Abstract: bt 330 HYB3116400 HYB3117400 400BJ 4Mx4 DRAM
Contextual Info: 3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT L -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 -60 -70 tRAC

Contextual Info: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

HYB3116400

Abstract: HYB3117400 HYB5116400 HYB5117400
Contextual Info: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

thv8

Abstract: HYB39S16800T 16m x 4 hyb
Contextual Info: SIEMENS SIMM-Modules Product View S IM M -M odules Product View SIMM-Modules non-parity 2M X 32 FPM EDO FPM G = Gold leaded Semiconductor Group 26 EDO SIEMENS SIMM-Modules Product View 4M x 3 2 8M FPM EDO 32 FPM L-SIM-72-12 HYM 324020S/GS X EDO L-SIM-72-15

400BJ

Contextual Info: 3.3V 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh HYB 3116400BJ/BT L -50/-60/-70 HYB 3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 ˚C operating temperature Performance:

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

Contextual Info: SIEMENS 3.3V 4M X 4-Bit Dynamic RAM 2k & 4k-Refresh HYB 311 6400BJ/BT L -50/-60/-70 HYB 3117400BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 ^RAC RAS access time

Contextual Info: SIEM ENS 3.3V 4M X 4-Bit Dynamic RAM 2k & 4k-Refresh HYB 3116400BJ/BT L -50/-60/-70 HYB 3117400BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ÍRAC RAS access time

HYB39S16400T

Abstract: hyb39s16800t 314100BJBJL 3165805AT Siemens Multibank DRAM HYB5118160BS 4K x 1 DRAM
Contextual Info: SIEMENS 4M Product View 4M Product View 4M DRAM 1M X 4 4M X 1 256kX 16 HVB 314100BJ/BJL HYB 314400BJ/BJL HYB314405BJ/BJL HYB 314171BJ/BJL HYB 314175BJ/BJL HYB 514100BJ/BJL HYB 514400BJ/BJL HYB 514405BJ/BJL HYB 314265BJ/BJL HYB 514171 BJ/BJL HYB 514175BJ/BJL