HYUNDAI DRAWING Search Results
HYUNDAI DRAWING Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register. |
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HY5216256 256Kx 16-bit 16bits 4b750à 1VC01-00-MAY95 525mil 64pin 4b750flà | |
P55i
Abstract: B0000h-BFFFF
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16Kbytes, HY29F800 16-bit 16-bit) P-55I, T-55I, R-551 P-55E, T-55E, P55i B0000h-BFFFF | |
Contextual Info: »HYUNDAI HYCFL002 Series 2MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL002 is the Flash memory card consisting of four 5V-only 4Mbit 512Kx8 Rash memory chips in a metal plate housing. Tiie Hyundai Flash memory card is optimized for the application of data and file storage in the |
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HYCFL002 x8/x16 512Kx8) 4b750Afl 0D03T4b 1FC08-01-MAR96 4b750flfl | |
Contextual Info: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the |
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HYCFL001 x8/x16 512Kx8) 01-MAR96 4b750flfl DDD315S 1FC08-01-MAR96 | |
Contextual Info: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in |
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HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl | |
Contextual Info: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current |
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HY29F080 S-128 HY29F080 | |
Contextual Info: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in |
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x8/x16 HYCFLF16004 16Mbit 4b750flfl 1FC08-01-MAR96 | |
Contextual Info: •HYUNDAI HY29F002 Series 256K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase • - Minimizes system-level power requirements • • • Uses software commands, pinouts, and packages following industry standards for |
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HY29F002 C-45I, T-451, R-451 P-45E, C-45E, T-45E, R-45E P-551, C-551, | |
Contextual Info: •HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands |
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HY29F040 32-Pin HY29F040 120ns P-121, T-121, R-121 P-12E, | |
Contextual Info: - H Y U N D H Y 5 2 1 6 2 5 6 A I S e r ie s 256K X 16-bit Video RAM with 2CAS Introduction O verview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register. |
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16-bit 16bits asynchronou84 1VC01-00-MAY95 HY5216256 525mil 64pin | |
C551
Abstract: HY29F040A P55i
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HY29F040A 32-Pin HY29F040A C551 P55i | |
Contextual Info: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a |
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HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I, | |
Contextual Info: “H Y U N D A I HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 120 ns access time • Compatible with JEDEC-Standard Commands |
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HY29F040 120ns P-121, T-121, R-121 P-12E, T-12E, R-12E P-151, | |
h9740
Abstract: B897 T9934 l9735 l9731 L9726 74100 B8948 JESD22-B100 PT 9732
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DU128 PQ132 PK128 723643Z ASAT-HK/T11567 PN100 70V261Z H52742 71215Y ASAT-HK/T11531 h9740 B897 T9934 l9735 l9731 L9726 74100 B8948 JESD22-B100 PT 9732 | |
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Contextual Info: «HYUNDAI HY29F040 Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 120 ns access tim e Compatible with JEDEC-Standard Comm ands |
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HY29F040 32-Pin P-121, T-121, R-121 P-12E, | |
Z134Contextual Info: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • S.O V 10% Read, Program, and Erase - Minimizes system-ievel power requirements • High performance - 55 ns access time • Internal Programming Algorithms |
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HY29F080 G-55I, T-55I, R-55I G-55E, T-55E, R-55E G-70I, T-701, Z134 | |
Contextual Info: •HYUNDAI HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEYFEATURES • 5.0 V * 10% Read, Program, and Erase - • • • Uses software commands, pinouts, and packages following industry standards for single power supply Flash memory |
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HY29F040A R-551 P-55E, T-55E, R-55E P-701, C-701, T-701, R-701 P-70E, | |
E-1330
Abstract: epson e-1330 HG19501NY-EWS e1330 epson e1330 Hyundai LCD 256x128 lcd hyundai topway 128 AP12
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CONFIRM19501NY-EWS 14-C1 13XP2 HG19501NY-EWS E-1330 epson e-1330 HG19501NY-EWS e1330 epson e1330 Hyundai LCD 256x128 lcd hyundai topway 128 AP12 | |
h9740
Abstract: k1917 B934 L9726 Y9846 H9817 n9831 l9735 9806 9826 320
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72201X H54480G T11747 7280Q 60210D D00725 P23419G 42V509Z P23393G 71V124T h9740 k1917 B934 L9726 Y9846 H9817 n9831 l9735 9806 9826 320 | |
K2837
Abstract: h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726
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61245L 63344N K26795 A17844 A17838 7280Q D01802 43574K 42646H K2837 h9910 pj 899 diode l9845 k1917 B897 74100 ipc 9850 74FST163245 L9726 | |
h9910
Abstract: 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A
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61245L 63344N K26795 A17844 A17838 7280Q D01802 43574K 42646H h9910 74FST163245 B897 PL84 K2837 9806 h9910 datasheet ipc 9850 pj 899 diode JEDEC-22-A113-A | |
H9723
Abstract: h9740 L9727 H9703 PJ 966 IV L9718 L9726 IC L9712 K961 L9712
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61543N K12871L PK100 71V632Z 2821W H51143 Y9681 7007Z ASAT-HK/T11052 7280Q H9723 h9740 L9727 H9703 PJ 966 IV L9718 L9726 IC L9712 K961 L9712 | |
k1917
Abstract: L9726 JESD22-B100 9806 cga 624 Monitor Hyundai Service TSOP 173 g JEDEC-22-A113 K1573 74FST163245
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723612Z 71215Y 72225S 2211W Y10648 Y10746 Y10662 T11844 61823N k1917 L9726 JESD22-B100 9806 cga 624 Monitor Hyundai Service TSOP 173 g JEDEC-22-A113 K1573 74FST163245 | |
Contextual Info: >43 Y l l N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 55 ns access time Internal Programming Algorithms |
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HY29F080 44-Pin 40-Pin G0071b5 |