HYUNDAI TV HY 22 F CIRCUIT Search Results

Contextual Info: ‘ HYUNDAI HYM532220A E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532220A is a 2M x 32-bit Fast Page mode CMOS ORAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII and an AND gate in 16 pin SOP on a 72 pin giass-epoxy printed circuit board. 0.22nFdecoupling

Hyundai Semiconductor

Abstract: hy27c64-20 HY27C64A
Contextual Info: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

HY29F002

Abstract: 29F002T hyundai tv hy 22 f circuit 29F002 HY29F002T PDIP32 PLCC32 TSOP32 hyundai tv circuits P55i
Contextual Info: HY29F002 2 Megabit 256K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current

Contextual Info: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current

29F080

Abstract: HY29F080T90 1N3064 HY29F080 PSOP44 7915 full pack hyundai tv hy 22 f circuit 3611-1
Contextual Info: HY29F080 Series 8 Megabit 1M x 8 , 5-volt Only, Flash Memory KEY FEATURES n 5-Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as low as 55 ns n Low Power Consumption – 15 mA typical active read current

hyundai tv hy 22 f circuit

Abstract: c 144 ESS HYM5C9256
Contextual Info: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin

29F080

Abstract: yura hyundai tv hy 22 f circuit 1N3064 HY29F080 PSOP44
Contextual Info: HY29F080 8 Megabit 1M x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 15 mA typical active read current

Contextual Info: " H Y U N D A I ” • Il H li fl • H Y 6 7 V 3 2 1 0 0 /1 0 1 32K X 32 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 32K x 32 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge

CRL4

Abstract: s8100
Contextual Info: HYU N DA I E L E C T R O N I C S 3^E J> • Mb7SGflö G0003flfl 2 « H Y N K 1M X 8-Bit CMOS DRAM MODULI1?”. M431201B-APR91 DESCRIPTION FEATURES T c a - 2 . ?> tRAC tCAC tpc HYM581000-60 60 20 40 HYM S81000-70 70 20 40 H YM581000-80 80 20 45 HYM 581000-10

Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

29F040A

Abstract: hyundai HY29F040A 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits HY29F040AT
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

hyundai HY29F040A

Abstract: 29f040a 1N3064 HY29F040A PLCC32 TSOP32 hyundai tv circuits
Contextual Info: HY29F040A 4 Megabit 512K x 8 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current

HYM591000M

Contextual Info: HY UN DA I E L E C T R O N I C S SIE D •HYUNDAI SEMICONDUCTOR • 4L>75Gfifi TS3 H H Y N K HYM591000 1MX9-Bit C MOS DRAM MODULE M 4 4 1 2 0 1 C -J A N 9 2 18 DESCRIPTION FEATURES The HYM591000M is a 1M words by 9 bits dynamic RAM module and consists of nine

Contextual Info: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also

Contextual Info: HYUNDAI HY29F080 Series 8 M eg ab it 1M x 8 , 5 -v o lt O n ly, Flash M em o ry KEY FEATURES 5-Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as low as 55 ns Low Power Consumption - 15 mA typical active read current

programming 29F400

Abstract: PSOP44
Contextual Info: HY29F400 4 Megabit 512K x 8/256K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte

programming 29F400

Abstract: HY29F400 PSOP44 29f400 psop
Contextual Info: HY29F400 4 Megabit 512Kx8/256Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte

programming 29F400

Abstract: HY29F400 PSOP44 programming 29F400 PSOP
Contextual Info: HY29F400 4 Megabit 512Kx8/256Kx16 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 45 ns n Low Power Consumption – 20 mA typical active read current in byte

HY29F800b

Abstract: HY29F800TT90 29F800 equivalent 29f800
Contextual Info: HY29F800 8 Megabit 1M x 8/512K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

HY29F800

Abstract: PSOP44 HY29F800TT90 DQ021
Contextual Info: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

C551

Abstract: HY29F040A P55i
Contextual Info: “H Y U N D A I HY29F040A Series 512K x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • • • • • • 5.0 V ± 10% Read, Program , and Erase - Minimizes system-level power requirements High perform ance - 55 ns access tim e Com patible with JEDEC-Standard Comm ands

HY29F800TT-90

Abstract: hy29f800tt HY29F800 PSOP44 29F800 code
Contextual Info: HY29F800 8 Megabit 1M x 8/512K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

Contextual Info: HYUNDAI HY2BFD4D Series _ 512K II B-bit CMOS 5V/12V, Buoi Bloch Flash Mwnory Preliminary DESCRIPTION The HY2BFD40 b o o l b lo ck flash m em ory is a very high performance 4 M bit m em ory organized as 512 Mbytes ol B bits each. Seven separately erasable blocks including a Hardware-Lockable boat b lo ck | 15,304 byTBs"J7two

EV02

Contextual Info: “HYUNDAI HY51 V65164,HY51 V64164 4M x 16-bit CMOS DRAM with Extended Data Out PRELIM IN A R Y DESCRIPTION ORDERING INFORMATION T his 'a m ily is a 64M bit dynam ic RAM organized 4,194 304 x 16-bit configuration with Extended Data Out m ode CM O S DRAMs. Extended Data O ut mode