I55 FET Search Results

100-P

Abstract: BUK553-60A BUK553-60B T0220AB
Contextual Info: P H IL I PS I N T E R N A T I O N A L bSE D HI 7 1 1 0 6 2 b Dab 4 EE b Philips Semiconductors T5b • PHIN Product Specification PowerMOS transistor BUK553-60A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: 2SK2019-01 F U JI P O W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • =eatures • H g h speed switching 03.6±O.2 • L j w on-resistance *5*0.2 • l\o secondary breakdown • L dw driving power • I-igh voltage Gale

Contextual Info: B U R R -B R O W N ' [ 3521 SERIES 3522 SERIES 1 NOT RECOMMENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input OPERATIONAL AMPLIFIERS FEATURES • ULTRA-LOW DRIFT. 1MV /° C max • LOW INITIAL OFFSET VOLTAGE. 25 0MV, max • LOW BIAS CURRENT, Ip A . max • LOW NOISE

3522k

Abstract: bb3500 3522J BB3500E 3522L PDS-472 BB-3500 3521K 3521J 3521L
Contextual Info: 3521 SERIES 3522 SERIES BURR-BROWN EM M 1 N O T R ECO M M ENDED FOR NEW DESIGNS Ultra-Low Drift - FET Input O PER A TIO N AL AM PLIFIERS FEATURES • ULTRA-LOW DRIFT, 1MV/°C max • LOW INITIAL OFFSET VOLTAGE. 250MV, max • LOW BIAS CURRENT, IpA. max • LOW NOISE

2SK820

Abstract: SF121 transistor DK qj 2sk820ii upcll K71E
Contextual Info: M O S F ie ld E ffe c t P o w e r T ra n s is to r 2SK820 N W ' ^ < 7 -M O S FET I i f f l 2S K 820Ü , N f i - i - ; i / X > / N > ' X y > l ' f P ' , 7 - M 0 S F E T T t < , v j- y r m iM , if# x 4 -y f - > g , ïtç ig - x m m ^ - f i • mm i HUS

2SK831

Abstract: T108 T460 2SK83
Contextual Info: M o s h = 7 > > ^ M O S Field E ffe c t P o w e r T ra n s is to r N f - t ^ /N° 7 - M O S FET i i f f l 2SK831 ü , t ì s t a f f i < , N - f -v x X / > h -i •/ - f > ¿ 'I i t t i - « B ' ' OT7 — M O S F E T T ' + > 1 , r H I T O m : mm) «5 3.2 + 0.2

mosfet 500v 4A

Abstract: Mosfet application note fairchild FDD5N50NZTM
Contextual Info: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FFH60UP60S, FFH60UP60S3 tm Features 60A, 600V Ultrafast Rectifier • High Speed Switching, rrt < 80ns • High Reverse Voltage and High Reliability The FFH60UP60S and FFH60UP60S3 are ultrafast rectifiers with low forward voltage drop. it is a silicon nitride passivated ionimplanted epitaxial planar construction.

fairchild pin 1 marking

Abstract: FFH60UP60S
Contextual Info: FFH60UP60S, FFH60UP60S3 tm Features 60A, 600V Ultrafast Rectifier • High Speed Switching, trr < 80ns The FFH60UP60S and FFH60UP60S3 are ultrafast rectifiers with low forward voltage drop. it is a silicon nitride passivated ionimplanted epitaxial planar construction.

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

Contextual Info: UniFET-IITM FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features Description • RDS on = 1.38 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: UniFET-IITM FDD3N50NZ N-Channel MOSFET 500V, 2.5A, 2.5 Features Description • RDS on = 2.1 ( Typ.)@ VGS = 10V, ID = 1.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: RHRP860_F085 September 2011 Data Sheet 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

UR620C

Abstract: RURD620CCS9A RURD620CCS9A-F085 UR620
Contextual Info: _ RURD620CCS9A_F085 August 2011 Data Sheet 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: _ RURD620CCS9A_F085 Data Sheet August 2011 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

TA49059

Abstract: rhrp TA4905
Contextual Info: RHRP860_F085 Data Sheet September 2011 8A,600V Hyperfast Diodes Features The RHRP860_F085 is hyperfast diodes with soft recovery characteristics trr < 30ns . It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

FDB8441

Contextual Info: FDB8441 N-Channel PowerTrench MOSFET 40V, 120A, 2.5mΩ Features Applications „ Typ rDS on = 1.9mΩ at VGS = 10V, ID = 80A „ Automotive Engine Control „ Typ Qg(10) = 215nC at VGS = 10V „ Powertrain Management „ Low Miller Charge „ Solenoid and Motor Drivers

Contextual Info: FDP047N10 N-Channel PowerTrench MOSFET 100V, 164A, 4.7mW Description General Description • RDS on = 3.9mW ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advance PowerTrench process that has been especially

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDD390N15

Contextual Info: FDD390N15A N-Channel PowerTrench MOSFET 150V, 26A, 40mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 26A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

JESD22-A113F

Abstract: Fdb020n08 N_CHANNEL MOSFET 100V MOSFET
Contextual Info: FDB024N08BL7 N-Channel PowerTrench MOSFET 80V, 229A, 2.4mΩ Features Description • RDS on = 1.7mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: FDMC86520L N-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mΩ Features General Description „ Max rDS on = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node

diode sd pd

Contextual Info: FQD4P25TM_WS / FQU4P25 October 27, 2011 FQD4P25TM_WS / FQU4P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.