I8 SOT23 Search Results

transistor j109

Abstract: transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110
Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.

transistor j109

Abstract: MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110
Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.

Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 G S Mark: I8 TO-92 D NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.

I8 SOT23

Abstract: FMMT495 F10Q
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IS S U E 3 - N O V E M B E R 1995 P A R T M A R K IN G D E TA IL • FMMT495 O 495 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL Collector-Base Voltage Colleetor-Em itter Voltage VALUE U N IT

W18 sot23

Abstract: ic w83 SOT343R bfp280tw SOT-343 BFP181TW
Contextual Info: Tem ic Semiconductors :m> # T 050I3 T050 (4) SOT23 60 Part Number v CEO Icnrax Plot 8t Tgjnti i s V mA # mW °C # SOT143 # SOT323 SOT343 Electrical characteristics ff at Ic hre a tlc and Gp at Ic and f VCE mA V MHz | raA dB mA MHz F at f and Ic dB MHz mA

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

W1p TRANSISTOR

Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Contextual Info: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF

Si3443DV

Abstract: P-Channel 200V MOSFET TSOP6 93795B
Contextual Info: PD- 93795B Si3443DV HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel -2.5V Rated D A D 1 6 2 5 3 4 VDSS = -20V D G D S RDS on = 0.065Ω Top View Description These P-channel MOSFETs from International Rectifier

2D 1002 diode

Abstract: d3s marking DIODE D3S 90 MARKING tAN SOT-23 diode MARKING tAN SOT-23
Contextual Info: PD - 9 .1508C International IOR Rectifier IR L M S 1 5 0 3 HEXFET Power MOSFET • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • N-Channel MOSFET V dss = 3 0 V RDS(on) = 0 .1 0 Î2 Description Fifth Generation H EXFETsfrom International Rectifier

Contextual Info: ; S v m Se m i ; 5YM5EMI SEMICONDUCTOR SOT -23 Plastic Encapsulate Transistors SOT — 23 BCX19LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation Pen : 0.225 W (Tamb=25 °C) 2. I Collector current Icm : 1.3 0.5 r~ m A -E Collector base voltage

IRLML2402

Abstract: EIA-541 7.5v voltage regulator SOT 23
Contextual Info: PD - 91257D IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier

transistor pnp ecg 180

Abstract: Transistor 123AP 123AP transistor BU 102A transistor fet ecg transistor. ECG 123AP 4511 gm Bt 2313 transistor t18 FET ecg 123 transistor
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type D escription and A p plicatio n • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at T c = 25°C Unless Otherwise Noted) C ollector To Base V olts C ollector To E m itter V olts Base to E m itter V olts

Bt 2313

Abstract: Transistor 123AP transistor t18 FET transistor BD 263 transistor ECG 152 transistor ecg 226 123ap Philips ECG 152 ic 2429 ECG24
Contextual Info: PHILIPS E C G INC S4E D Transistors icont'd ECG Type Description and Application • bbSBTEfl DDDTIH? &12 ■ E C G Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Collector To Emitter Volts b v Ceo Base to Emitter Volts

Contextual Info: SyrnSEMi SOT -23 Plastic Encapsulate Transistors 5YM5EMI SEMICONDUCTOR SOT — 23 MMBTA42LT1 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation PCM : 03 W (Tamb=25 °C) Collector current Icm : 0.3 A Collector base voltage V ( br ) cbo

IRLMS5703

Contextual Info: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Micro6 Package

Abstract: IRLMS5703
Contextual Info: PD - 91413E IRLMS5703 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET D D G Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

Contextual Info: PD - 93756E IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET *  VDSS = -12V  ' RDS(on) = 0.05Ω 6  Description These P-Channel MOSFETs from International Rectifier

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo

Contextual Info: INTEG R ATED CIRCUITS T O K O 38 Voltage Regulator ICs Surface Mounting u* X * 4ß TK112MDAM Series /TK112 DAU Series Features • Small difference between input and output voltages. (0.16V at lo = 60mA) • High precision output voltage (±2.4% or ±80mA)

Contextual Info: MMBFJ270 MMBFJ270 P-Channel Switch G • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. S SOT-23 D Mark: 61S 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25°C unless otherwise noted

MMBFJ270

Abstract: I8 SOT23 process 88
Contextual Info: MMBFJ270 MMBFJ270 P-Channel Switch • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 88. G S SOT-23 D Mark: 61S 1. Drain 2. Gate 3. Source Absolute Maximum Ratings* Ta=25°C unless otherwise noted

diode marking 355 SOT23

Abstract: mosfet ir 840
Contextual Info: PD - 94947B IRLML6302PbF l l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free HEXFET Power MOSFET *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω

diode sot-23 marking AG

Abstract: diode marking 355 SOT23 XF SOT-23 MJ marking sot23
Contextual Info: PD - 94974A IRLML2803PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free D VDSS = 30V G RDS(on) = 0.25Ω S Description

HEADER 2X7 2.54MM

Abstract: MAX232A SO-16 BEYSCHLAG RS-486 R37-R39 SM0603 JP35 TSSOP-56 LED green sot halo TGSP
Contextual Info: Project name: EASY22504-R1 V1.1 Board Quantity: 1 Nr. Partnumber 1 C1.C7, C9.C20, C26.C41 2 C8, C24 3 C25 4 C22, C23 5 D9, D12.D15 6 D24.D29 7 D10, D11 F1.F4, F15.F20, F25.F28, F33, F34 8 9 F9, F10, F35.F40 F5.F8, F11.F14, F21.F24, F29.F32 10