IC 3A Search Results

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT788B ISSUE 3 - OCTOBER 1995 FEATURES * Low equivalent on-resistance; RCE sat 93mΩ at 3A * Gain of 300 at IC=2 Amps and Very low saturation voltage 1.8 IC/IB=200 IC/IB=100 IC/IB=10 1.8 Tamb=25°C

2SC4130

Abstract: FM20 transistor+2sC4130
Contextual Info: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj

2SD2141 equivalent

Abstract: 2SD2141 FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SD1796

Abstract: relay 12v 3a datasheet FM20
Contextual Info: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A

STK392-110

Abstract: STK392-040 stk392 210 stk*392-110 STK392-220 STK392-010 STK392_110 ENN5170 51704
Contextual Info: Ordering number:ENN5170 Thick Film Hybrid IC STK392-110 3-Channel Convergence Correction Circuit IC max = 3A Overview Package Dimensions The STK392-110 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers in

Sanyo

Contextual Info: Ordering number:ENN5170 Thick Film Hybrid IC STK392-110 3-Channel Convergence Correction Circuit IC max = 3A Overview Package Dimensions The STK392-110 is a convergence correction circuit IC for video projectors. It incorporates three output amplifiers in

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

2sc3835

Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA V V V(BR)CEO IC=50mA 120min 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A

2SC4468

Abstract: 2SA1695
Contextual Info: 2SC4468 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1695 10max µA V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A

2SC3835

Abstract: DSA0016507
Contextual Info: 2SC3835 Silicon NPN Triple Diffused Planar Transistor Switching Transistor µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 70(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A 1.2max

2SD2014

Abstract: 2SB1257 FM20 S8010
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SC3890

Abstract: FM20
Contextual Info: 2SC3890 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=3A 10 to 30 IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A

2SC4467

Abstract: transistor 2SC4467 2SA1694
Contextual Info: 2SC4467 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1694 2SC4467 Unit ICBO VCB=160V 10max µA VCEO 120 V IEBO VEB=6V 10max µA VEBO 6 V V(BR)CEO IC 8 A hFE 120min IC=50mA V VCE=4V, IC=3A 50min∗ 19.9±0.3 Symbol A VCE(sat) IC=3A, IB=0.3A

2SD2141

Abstract: 2SD2141 equivalent FM20 DMS-10
Contextual Info: Equivalent circuit 2SD2141 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 380±50 V IEBO VEBO 6 V V BR CEO 6(Pulse10) A hFE IC Symbol Conditions VCB=330V 10max µA VEB=6V 20max mA IC=25mA 330 to 430 V 1500min VCE=2V, IC=3A 1 A VCE(sat) IC=4A, IB=20mA

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA

2SC3856

Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492
Contextual Info: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A

2SC3680

Contextual Info: 2SC3680 Silicon NPN Triple Diffused Planar Transistor High Voltage Switching Transistor V IEBO VEB=7V 100max µA V V V(BR)CEO IC=10mA 800min 7(Pulse14) A hFE VCE=4V, IC=3A 10 to 30 IB 3.5 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A

2SC3834

Abstract: transistor 1022
Contextual Info: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor 100max µA V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A 0.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=0.3A

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

U20 diode sm

Abstract: C181-C187 C69 diode sm RMC 0805 1.2M C159C Motorola R97 P13B3125Q PTC111 IC 93c46 bcr beckman resistor
Contextual Info: 0700F _BoM Location QTY Part Descripition U21 IC/SM 74LVC04AD SOIC14 3.3V 1 U4 IC/SM 74LVC08 3.3V TSSOP-14 2 U22 IC/SM 74LVC14 3.3V TSSOP-14 1 U7,U8 IC/SM 74LVTH273 TSSOP-20 3.3V 2 U14,U15 IC/SM 74LVC573 SOIC20 No Bus H 2 U3 IC/SM 74C32 TSSOP-14 1 U27 IC/SM 3.3V Quad Switch(QSOP16)

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

lf817

Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V

KTA1243

Contextual Info: SEMICONDUCTOR KTA1243 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. B C FEATURES A ᴌhFE=100ᴕ320 VCE=-2V, IC=-0.5A . ᴌhFE=70(Min.) (VCE=-2V, IC=-4A). ᴌLow Collector Saturation Voltage. N E K : VCE(sat)=-0.5V (IC=-3A, IB=-75mA).