IC TSOP28 Search Results

MSM51V16400

Contextual Info: O K I Semiconductor MSM51 V16400 4,194,304-W ord x 4-B it DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a new generation dynam ic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V16400 is OKI's CMOS silicon gate process technology.

5116100

Contextual Info: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit D YN AM IC R A M : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116100 is a new generation dynam ic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.

Contextual Info: TEm ic TSOP28 S e m i c o n d u c t o r s Photo Modules for PCM R em ote Control Systems Available types for different carrier frequencies . Type . . fo. TSOP2830 30 kHz TSOP2833 . fo. 33 kHz TSOP2836 36 kHz TSOP2837

RILP0108ESP-xSR

Abstract: RILP0108ESA-xSR R1LV0816A r1lv0808 RILP0108ESA-xSI RILP0108ESF-xSR RILP0108E M5M5256DFP-70LLI M5M5256D M5M5V108D
Contextual Info: Renesas Memories General Presentation October 2010 Renesas Low Power SRAM Renesas Electronics Corporation Mixed Signal IC Business Div. Analog & Power Devices Business Unit 10/01/2010 1-1 Rev.2.00 2010. Renesas Electronics Corporation. All rights reserved.

Contextual Info: O K I Semiconductor MSM51V17100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V171CX is OKI's CMOS silicon gate process technology.

Contextual Info: Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices

A11E

Abstract: A1E transistor
Contextual Info: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.

Contextual Info: Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices

5117805

Contextual Info: O K I Semiconductor_ MSM5117805A_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117805A is a 2,097,152-word x 8-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117805A achieves high integration, high-speed operation, and low-power

1710070

Contextual Info: O K I Semiconductor MSM51 V17100 16 Meg x 1-Bit DYNAMIC RAM DESCRIPTION The MSM51V17100 is a 16 M egabit dynam ic m emory organized a s 16,777,216 w ord by 1 bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V17100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit. The technology used to fabricate the M SM 51V17100 is OKI's CMOS silicon gate process technology.

70513

Contextual Info: Ordering number : ENN*7051 CMOS IC LC35W256GM, GT-70U 256K 32768-words x 8-bit SRAM with OE and CE control pins Preliminary Overview Package Dimensions The LC35W256GM-70U and LC35W256GT-70U are 32768-words by 8-bit asynchronous silicon gate low supply voltage CMOS SRAMs. These devices adopt a

7B424

Abstract: MSM5117100
Contextual Info: O K I Sem iconductor M SM5117100 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCR IPTIO N The MSM5117100 is a new generation dynam ic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM5117100 is OKI's CMOS silicon gate process technology.

MSM51V16100

Contextual Info: O K I Semiconductor MSM5 1 V16100 _ 16,777,216-W ord x 1 -B it DYN AM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V16100 is OKI's CMOS silicon gate process technology.

dip28-300

Abstract: bt 450 DIP28- 600
Contextual Info: Ordering number : EN5804A CMOS IC LC3564B, BS, BM, BT-70/10 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a

DIP28

Abstract: LC35256D-10 LC35256DM LC35256DT dt70 Dt10 3221-TSOP28
Contextual Info: Ordering number : EN5823 CMOS IC LC35256D-10, LC35256DM, DT-70/10 Dual Control Pins: OE and CE 256K 32768-word x 8-bit SRAM Overview Package Dimensions The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS

Contextual Info: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

LC35256

Abstract: 3221-TSOP28
Contextual Info: Ordering number : ENN*6302 CMOS IC LC35256FM, FT-55U/70U 256K 32768 words x 8 bits SRAM Control Pins: OE and CE Preliminary Overview Package Dimensions The LC35256FM and LC35256FT are asynchronous silicon-gate CMOS SRAMs with a 32K-word by 8-bit structure. These are full-CMOS devices with 6 transistors

Contextual Info: O K I Semiconductor MSM51V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE T YPE DESCRIPTION The MSM51V16100 is a new generation dynam ic organized as 16,777,216-w ord x 1-bit, The technology u sed to fabricate theM SM 51 V16100 is OKI's CM O S silicon gate process technology.

A13514

Abstract: 70U30
Contextual Info: Ordering number : ENN6635A CMOS IC LC3564CM, 3564CT-55U/70U 64K 8192-word x 8-bit SRAM with OE, CE1, and CE2 Control Pins Overview The LC3564CM and LC3564CT-55U/70U are 8192-word × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor

MSM51V16400

Contextual Info: O K I Semiconductor MSM51V16400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16400 is a n e w generation dynam ic organized as 4,194,304-w o rd x 4-bit. The technology used to fabricate the MSM51V16400 is O K I's C M O S silicon gate process technology.

Contextual Info: O K I Semiconductor MSM51V17400 4,194,304-Word x 4-Bit D Y N A M IC RA M : FAST PAG E M O D E TYPE DESCRIPTION The MSM51V17400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM51V17400 is OKI's CMOS silicon gate process technology.

MSM5117800

Abstract: TSOP28-P-400
Contextual Info: O K I Semiconductor MSM5 1 17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117800 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 8-bit configuration. The technology used to fabricate the MSM5117800 is OKI's CMOS silicon gate process technology.

tsop 338 IR

Contextual Info: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17800 is a 2,097,152-w ord x 8-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 51V17800 achieves high integration, high-speed operation, and low-power