ICA 700 Y Search Results

c 565-2

Abstract: 3X050-10-7 2X03-X-X
Contextual Info: Pulse-FEE A T E C H N I T R O L C O M P A N Y FE 2 X Series Current compensated Noise Supression Chokes Inductances compensées d'antiparasitage Key Features Electrical spe cificatio n a t 25°C L±30% mH Caractéristiques Basic Part N o 3,3 6,8 10 15 18

CD4022A

Abstract: CD4001A
Contextual Info: CD4022A Types CMOS Divide-By-8 Counter/Divider With 8 Decoded Outputs The R C A^C D 4022A types consist o f a 4stage divide-by-8 Johnson counter, associ­ ate decode o u tp u t gating and a C A R R Y ­ OUT BIT. The counter is cleared to its zero c o u n t by a high RESET signal. The counter

S0700KC17Y

Abstract: S0500KC25D S0700KC17D GTO thyristor WESTCODE H0700KC17D s0700kc S0500KC20Y G1500N G2000VC250 H0700KC17Y
Contextual Info: A broad range of high specification GTO thyristors are available with blocking voltages from 1.7 kV to 6 kV and controllable current ratings to 4000A. O ur GTO th yristo r p o rtfo lio in co rp o ra te s a range o f ad van ced te c h n o lo g ie s such as flo a tin g silicon, buffer layer, fin e geom etry,

3000 watts audio amplifier

Contextual Info: Ra dio Freq uency P o w e r Am plifier: M o d u la to r M A X I M U M R A T IN G S A N D T Y P IC A L ^ l ll ll ll ll ll ll ll l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l l ^

st 9935

Abstract: A9935 HPMA-9986 and/ic 9935 a 8 pin
Contextual Info: T tip l HEW LETT wL'KM P A C K A R D I Silicon Bipolar Monolithic Amplifiers HPM A-9900 H PM A -9935 HPM A-9970 HPM A-9985 HPM A-9986 Technical D ata F ea tu re s H PM A -9900 • 15.6 d B O p e n L o o p G a in T y p ic a l a t 1 G H z • 14.6 dB m P jjjg T y p ic a l a t

RCA 40251

Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
Contextual Info: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use

Contextual Info: TELEFUNKEN Semiconductors BPV 11 F Silicon NPN Phototransistor Description BPV 11 F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p y 900nm . The

7z mosfet

Contextual Info: S P E C I F I C A T I O N DEVICE NAME TYPE NAME : P o w e r M O S F E T Z S K 2 6 4 6 — 01 SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric CoJLicL DRAWN CHECKE Y 0257-R-004a

HPMA-0335

Abstract: HPMA-0311 HPMA-0300 HPMA-0370
Contextual Info: A m p lifie r s VJ HEWLETT PACKARD Silicon Bipolar Monolithic Amplifiers Technical Data F eatu res HPMA-0300 • 3 dB B an d w id th : DC to 2.8 GHz • 12.0 dB G ain a t 1 GHz • U n co n d itio n ally S table (k >1 • C ascadab le 50 O hm G ain B lock

monsanto LED

Abstract: Monsanto MV5054-1 MV5054-2 MV5054-3 MV5050 MV5051 MV5052 MV5053 MV5055
Contextual Info: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source

Contextual Info: ES3AB thru ES3MB CbvriSEMT^ — m i n c 3.0 Amps. Super Fast Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes 5YNSEMI SEMICONDUCTOR Features ♦ ♦ ♦ ♦ ♦ ♦ G la ss p a s s iv a te d chip S u p e r fa s t s w itch in g for high e ffic ie n c y

TEMT1000

Abstract: TEMT1020 TEMT1030 TEMT1040 TSML1000
Contextual Info: TEMT1000, TEMT1020, TEMT1030, TEMT1040 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES TEMT1000 TEMT1020 • • • • • TEMT1030 • • • TEMT1040 16757 • • Package type: surface mount Package form: GW, RGW, yoke, axial

Contextual Info: TEMT1000, TEMT1020, TEMT1030, TEMT1040 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES TEMT1000 TEMT1020 • • • • • TEMT1030 • • • TEMT1040 16757 • • Package type: surface mount Package form: GW, RGW, yoke, axial

Lithium-Ion cell fuel gauging with dallas second

Abstract: DS2438
Contextual Info: Application Note 131 Lithium-Ion Cell Fuel Gauging with Dallas Semiconductor Devices www.dalsemi.com 2000 Dallas Semiconductor DS2438 DS2760 BATTERY: 59% Voltage, Current, and Temperature Measurements. Cell Characterization Data. Accurate Capacity Estimation.

PC4560

Contextual Info: SEC /uPC4560 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER NEC Electronics Inc. D escrip tio n Pin C o n fig u ra tio n T he //PC4560 is a dual o p e ra tio n a l a m p lifie r w ith im proved slew rate and g a in -b a n d w id th p ro d u ct when c o m pared to the yuPC4559 w ith u n ity gain freq u e n cy

Contextual Info: TEMT1000, TEMT1020, TEMT1030, TEMT1040 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant TEMT1000 FEATURES TEMT1020 • • • • • TEMT1030 • • • • • TEMT1040 16757 Package type: surface mount Package form: GW, RGW, yoke, axial

Contextual Info: MODELS IM-2A-ER and IM-2B-ER Inductors M ilitary/Established Reliability MIL-C-39010 Qualified, M 39010/08/09 FE A T U R E S MIL-C-39010/08 Phenolic Core MIL-C-39010/09 (Iron Core) ELE C T R IC A L S P E C IF IC A T IO N S D E N S IT Y S P E C IF IC A T IO N S

MV5056

Abstract: TIL209A MV5054-2 MV5050 MV5051 MV5052 MV5053 MV5054-1 MV5054-3 MV5055
Contextual Info: 1-4 LED V isib le Lam ps C o n t’d Max F orw a rd C u rre n t mA 100 T yp ica l Lum inous in te n s ity m cd T yp ica l F o rw a rd V olta ge @ Ip = 20 mA V Data Sheet Page No. 2.0 @ 20 mA 1.7 2-25 D evice No. Lens C h a ra c te ris tic MV5050 Clear Point Source

ci 94vo

Abstract: cc 156g 155G HER158G er151
Contextual Info: HER151G - HER158G T A IW A N S E M IC O N D U C T O R s 1.5 A M P S . G ia s s P a s s iv a t e d H ig h E f f ic ie n t R e c t ifie r s RoHS D O -15 CO M PLIANCE Features ❖ -Y•> «fr❖ -Y- <&■ •J£2jM i T W & ZJ DA G la s s p a s s iv a te d c h ip j u n o tio n .

IR 10D 6g

Abstract: 6H60 FND 570
Contextual Info: evE R L IG H T 0 . 5 6 In c h 1 4 . 2 m m 1 D ig it H Y B R ID A IR -G A P S M D D IS P L A Y A lln G a P R ed (6 3 0 n m ) F N D 6 H 6 0 .S M D , A lln G a P R ed (6 4 2 n m ) F N D 6 R 6 0 .S M D , P R E L IM IN A R Y A lln G a P Y e llo w F N D 6 Y 6 0 .S M D ,

Contextual Info: TEMT1000, TEMT1020, TEMT1030, TEMT1040 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant TEMT1000 FEATURES TEMT1020 • • • • • TEMT1030 • • • • • TEMT1040 16757 Package type: surface mount Package form: GW, RGW, yoke, axial

CA2818

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line W ideband Linear A m p lifie rs 18.5 dB 1-200 MHz 900 mWATT WIDEBAND LINEAR AMPLIFIERS . . . desig n ed fo r a m p lifie r a p p lica tio n s in 50 to 100 o h m system s re q u irin g w id e b a n d w id th , lo w n oise and lo w d is to rtio n . This h y b rid p ro vid e s e xcelle nt gain s ta b ility

IC10C

Abstract: F MARKING 6PIN FC-601
Contextual Info: saH y o 5/6-Pin CPs FC Series The Sanyo 5/6-pin chip packs are small-sized packages that facilitate higher-density mounting. We have various Packings that meet automatic mounting requirements. ale FETs for LF Amp General-purpose Amp, Differential Amp Applications

Contextual Info: Dual Digit LED Displays 7-Segment Part No. Digit Size 0.40" Dual-Digit 0.43" Dual-Digit 0.50" Dual-Digit Common Anode Common Cathode BD-E401ND-A BD-E405ND-A BD-E405NE-A BD-E402ND-A BD-E403ND-A BD-F401ND-A BD-F405ND-A BD-F405NE-A BD-F402ND-A BD-F403ND-A BD-E404ND-A