ICM 7200 Search Results

Contextual Info: APTGT100TA120TPG Triple phase leg Fast Trench + Field Stop IGBT3 Power Module VBUS3 VBUS2 NTC1 G1 G5 G3 E1 E5 E3 U V W G2 G4 G6 E2 E4 E6 NTC2 0/VBUS1 0/VBUS2 0/VBUS3 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD

JS335020

Contextual Info: POüJEREX INC K 1SE mmatEX m 72=i4fc>21 000317=] 2 • 7 ^ 3 ?-fô Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Major Ratings and Characteristics at Te = 25°C (Tj Maximum = 150?C)

Contextual Info: SKiiP 83 ANB 08 Absolute Maximum Ratings | Conditions 1 Values Units 800 75 1200 7200 V A A A2s 600 ±20 5 0 /3 5 100/70 V V A A 600 5 0 /3 0 100/60 - 5 5 . . . + 150 - 5 5 . . . + 125 2500 V A A Bridge Rectifier Vrrm Theatsink — 80 °C Id tp = 10 ms; sin. 180 °, T¡ = 25 °C

JD335010

Abstract: JD334510 BP107 PRX713 TW-300
Contextual Info: POWEREX INC 3 *1 1 D 7 S ' ? M b 2 1 G G O M ’S T M fi I P R X J^OWEHEX JD334510 JD33501Q Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Dual Cascade

ID121215

Abstract: cm100dy-28 IEF21KA2 ID121230 cm50dy-28 ID126030
Contextual Info: PO UE REX m INC / 3TE ]> m a t • TSTMbEl 0GD37S3 6 * P R X Powerex, Inc., HIIHs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14

1000 volt ampere current MOSFET

Contextual Info: POWEREX BTE INC D 7 2 ci 4 b S l QQOMbQb fOWERCY IPRX JT371K75 Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 T - i ñ ' S t Split-Dual Cascode

Transistor ge 718

Contextual Info: POWEREX 3 =]E INC m u e D • ? 2 S M b 21 0 0 D M S Û 2 1' H P R X JS634530 JS635030 r Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 T - 3 1 '3 1

Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBN75N170A VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXBN75N170A

Abstract: IXBN 75N170A transistor 600 volts.50 amperes
Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 42A 6.00V 60ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC90 IXBK75N170A IXBX75N170A VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXBK75N170A

Abstract: IXBX75N170 PLUS247 IXBX75N170A G1040 100Z
Contextual Info: Advance Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170A IXBX75N170A VCES IC90 VCE sat tfi(typ) = = ≤ = 1700V 65A 6.00V 60ns TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IRG7PH46UPBF

Abstract: 600v 20a IGBT driver ir igbt 1200V 40A 96305 igbt 40A 600V C-150 9630
Contextual Info: PD - 96305 IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

irg7ph46

Abstract: 600v 20a IGBT driver tr marking code 25h irg7ph46uep marking code 117A IRG7PH46UPBF 8200 T igbt driver applications
Contextual Info: PD - 96305A IRG7PH46UPbF IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • C Low VCE ON trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient

sdc 7500

Abstract: st 9548 GT 1081 TI-XIO1100 PX1011A switch mode power supply handbook 8600 gt avalon vhdl byteenable design of dma controller using vhdl marking 2188
Contextual Info: PCI Express Compiler User Guide 101 Innovation Drive San Jose, CA 95134 www.altera.com Compiler Version: Document Date: 10.0 July 2010 Copyright 2010 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other

Contextual Info: < IGBT MODULES > CM1400DUC-24NF HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .….… 1 4 0 0 A Collector-emitter voltage VCES .… 1 2 0 0 V Maximum junction temperature T j m a x .

600v 100a

Abstract: APTGT100X120E3
Contextual Info: APTGT100X120E3 3 Phase bridge Trench IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes

600v 100a

Abstract: DIODE T25 APTGT100X120TE3
Contextual Info: APTGT100X120TE3 3 Phase bridge Trench IGBT Power Module VCES = 1200V IC = 100A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes

Contextual Info: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

Contextual Info: APT30GS60BRDL G 600V, 30A, VCE(ON) = 2.8V Typical Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower

VS-GT175DA120U

Contextual Info: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

VS-GT175DA120U

Contextual Info: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

VS-GT175DA120U

Abstract: A 3150 igbt driver
Contextual Info: VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 175 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

600v 100a

Abstract: APTGT100H120
Contextual Info: APTGT100H120 Full - Bridge Fast Trench + Field Stop IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control VBUS Q3 G3 Q2 Features • Fast Trench + Field Stop IGBT® Technology

Contextual Info: APTGT100A1202G VCES = 1200V IC = 100A @ Tc = 80°C Phase leg Fast Trench + Field Stop IGBT3 Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 16 15 14 13 12 11 17 18 10 9 Features