IDT71V Search Results

CY7C1350

Abstract: IDT71V546 MCM63Z736
Contextual Info: fax id: 1103 CY7C1350 PRELIMINARY 128Kx36 Pipelined SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V546, MT55L128L36P and MCM63Z736 • Supports 143-MHz bus operations with zero wait

7C1351-40

Abstract: 7C1351-50 7C1351-66 CY7C1351 IDT71V547 MCM63Z737
Contextual Info: fax id: 1102 CY7C1351 PRELIMINARY 128Kx36 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices IDT71V547, MT55L128L36F and MCM63Z737 • Supports 66-MHz bus operations with zero wait states

Contextual Info: 1 28K x | dt Integrated De vice T echnology, Inc. 36, 256K x 18, PRELIMINARY 3.3V SYNCHRONOUS SRAMS mTTiv? WITH ZBT™ FEATURE, BURST IDT71V3557 COUNTER AND FLOW-THROUGH OUTPUTS IDT71V3559 FEATURES: • 128K x 36, 256 K x 18 m em ory configurations. • S upports high perform ance system speed - 1 0 0 MHz

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: : I dt 3.3V CMOS STATIC RAM 1 MEG 64Kx 16-BIT) PRELIMINARY IDT71V016SA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — 10/12/15/20ns • One Chip Select plus one Output Enable pin

Contextual Info: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Commercial (0° to 70°C) and Industrial (-4CTC to 85°C) • Equal access and cycle times — Commercial and Industrial: 15/20ns

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71V024L Integrated D e v ic e T e ch n o lo g y, Inc. FEATURES: DESCRIPTION: • • • • • • • The ID T71V024L is a 1,048,576-bit very low-pow er Static RAM organized as 1 2 8 K x 8 . It is fabricated using ID T’s highreliability CMOS technology. This state-of-the-art technology,

Contextual Info: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, FLOW-THROUGH OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT i :$*&&* 4« *»»« tK fc « * 'S * * * * ; 4ÎK «« ^ iL j; PRELIMINARY IDT71V2577 IDT71V2579 IDT71V3577 IDT71V3579 FE A TU R E S :

Contextual Info: 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, PIPELINED OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT D E S C R IP T IO N : FE A TU R E S : • 128K x 36,256K x 18 memory configurations • Supports high system speed: - PRELIMINARY IDT71V2576

Contextual Info: 3.3V CMOS STATIC RAM 32Kx 16-BIT PRELIMINARY IDT71V008 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 32K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times — Commercial: 10/12/15/20ns • One Chip Select plus one Output Enable pin

Contextual Info: J d t 3.3V CMOS STATIC RAM 4 MEG 512K X 8-BIT) ADVANCE r o V424S IDT71V424L I n t e g r a t e d D e i/ ic e T e c h n o l o g y , I n c . FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access The IDT71V321 is a high-speed 2K x 8 Dual-Port Static RAMs with internal interrupt logic for interprocessor com ­

Contextual Info: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation

Contextual Info: Æ SW ««K B » 128K X 36, 256K X 18, 3.3V SYNCHRONOUS SRAMS WITH 2.5V I/O OPTION, FLOW-THROUGH OUTPUTS, BURST COUNTER, SINGLE CYCLE DESELECT D E S C R IP T IO N : The IDT71Vx577/579 are high-speed SRAMs organized as 128K x 36/ 256K x 18. The IDT71Vx577/579 SRAMs contain write, data, address

71V424

Abstract: 71V424S15 IDT71V424 512K x 8 bit Low Power CMOS Static RAM
Contextual Info: ADVANCE INFORMATION IDT71V424 3.3V CMOS STATIC RAM 4 MEG 512K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 512K x 8 advanced high-speed CMOS Static RAM • JEDEC Center Power / GND pinout for reduced noise • Equal access and cycle times

IDT71V3576

Abstract: IDT71V3578
Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V3576 IDT71V3578 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:

DSC-3211

Abstract: IDT71V016 SO44-2
Contextual Info: PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Commercial (0˚ to 70˚C) and Industrial (-40˚C to 85˚C) • Equal access and cycle times

IDT71V2556

Abstract: IDT71V2558
Contextual Info: 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs Preliminary IDT71V2556 IDT71V2558 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ cycle, and two cycles later the associated data cycle occurs, be it read

IDT71V67602

Abstract: IDT71V67802
Contextual Info: 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Advance Information IDT71V67602 IDT71V67802 256K x 36/512K x 18. The IDT71V676/78 SRAMs contain write, data,

6116 CMOS RAM

Abstract: 6116 static RAM chip 71V428 IDT71V428 IDT71V428L IDT71V428S
Contextual Info: IDT71V428S IDT71V428L 3.3V CMOS Static RAM 4 Meg 1M x 4-Bit Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 1M x 4 advanced high-speed CMOS Static RAM JEDEC Center Power / GND pinout for reduced noise Equal access and cycle times — Commercial and Industrial: 10/12/15ns

IDT71V256SA

Abstract: IDT71V256SB 71V256
Contextual Info: 3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K 32K x 8-BIT IDT71V256SB Integrated Device Technology, Inc. FEATURES DESCRIPTION • Ideal for high-performance processor secondary cache • Fast access times: — 12/15/20ns • Inputs are 2.5V and LVTTL compatible: VIH = 1.8V

71V2578

Contextual Info: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA Description 128K x 36, 256K x 18 memory configurations

INTEGRATED DEVICE TECHNOLOGY 71V432

Contextual Info: 32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 processor interfaces. The pipelined burst architecture provides costeffective 3-1-1-1 secondary cache performance for processors up to

71V124SA

Abstract: 71V124 IDT71V124
Contextual Info: IDT71V124 3.3V CMOS Static RAM 1 Meg 128K x 8-Bit Revolutionary Pinout Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description 128K x 8 advanced high-speed CMOS static RAM JEDEC revolutionary pinout (center power/GND) for reduced noise Commercial (0°C to +70°C) and Industrial (–40°C to