IF91 Search Results

813-IF91.25M-02A

Abstract: 91.25 SAW Filter IF SAW Filter
Contextual Info: Oscilent Corporation PRODUCT SPECIFICATION REV A January 2011 Oscilent Controlled Document Ordering Code / Part Number Product Description 813-IF91.25M-02A 91.25MHz IF SAW Filter 2.08MHz Bandwidth Specification Contents o Mechanical Dimensions o Test Circuit

IRFR9110

Abstract: irfu9110 irfu9220 IRFR91109A TA17541 TB334 TC227
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

ST-0121

Abstract: ssc-32 cross D6t IF241 16.384MHZ sfe 5,5 ma sfe 5,5 mb MT90826 MT90826AG MT90826AL
Contextual Info: MT90826 H ITIA!fI M I T E L Quad Digital Switch Advanced Information S E M IC O N D U C T O R Features DS5197 • 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mb/s • Per-channel variable or constant throughput delay • Accept ST-BUS stream s o f 2.048Mb/s,

IF33

Abstract: of161 MT90826 MT90826AG MT90826AL MT90826AL1 MT90826AV STI10 STo26
Contextual Info: MT90826 Quad Digital Switch Data Sheet Features • January 2006 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mbps Ordering Information MT90826AL MT90826AG MT90826AV MT90826AL1 MT90826AG2 160 Pin MQFP Trays 160 Ball PBGA Trays 144 Ball LBGA

IF9120

Abstract: IRFR9120 IRFR91209A IRFU9120 kp158 623E3 4411E
Contextual Info: IRFU9120, IRFR9120 S E M I C O N D U C T O R 5.6A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Package • 5.6A, 100V JEDEC TO-251AA SOURCE DRAIN GATE • rDS ON = 0.600Ω • Temperature Compensating PSPICE Model

MT90863

Abstract: MT90863AG MT90863AL MT90863AL1 IC1 4047
Contextual Info: MT90863 3 V Rate Conversion Digital Switch Data Sheet Features May 2006 • 2,048 x 512 and 512 x 512 switching among backplane and local streams • Rate conversion between 2.048, 4.096 and 8.192 Mb/s • Optional sub-rate switch configuration for 2.048 Mb/s streams

IF9120

Abstract: TA17501 IRFR9120 IRFR91209A IRFU9120 TB334
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field

IF9110

Abstract: IRFR9110 2-03E6 TA17541 irfu9110
Contextual Info: IRFU9110, IRFR9110 ¡31 H a r r i s mu S E M I C O N D U C T O R m “ * m w j mm mm m mw r m m w 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs January 1996 Packaging Features JEDEC TO-251AA • 3.1 A, 100V SOURCE • r DS ON = 1 -2 0 0 i i

SAB 81 C 51 P

Contextual Info: MT90826 Quad Digital Switch Data Sheet Features • • • • • • • • • • • • • December 2002 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mb/s Per-channel variable or constant throughput delay Accept ST-BUS streams of 2.048Mb/s,

IC1 4047

Abstract: ST015
Contextual Info: MT90863 3V Rate Conversion Digital Switch Data Sheet Features • • • • • • • • • • • • • • February 2003 2,048 x 512 and 512 x 512 switching among backplane and local streams Rate conversion between 2.048, 4.096 and 8.192Mb/s Optional sub-rate switch configuration for

IF33

Abstract: if141 if202 IF281 MT90826 MT90826AG MT90826AL MT90826AL1 MT90826AV STI10
Contextual Info: MT90826 Quad Digital Switch Data Sheet Features August 2005 • 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mbps • Per-channel variable or constant throughput delay • Accepts 32 ST-BUS streams of 2.048 Mbps, 4.096 Mbps, 8.192 Mbps or 16.384 Mbps

sab 1793

Abstract: 16.384MHZ OF100 sfe 5,5 ma sfe 5,5 mb MT90826 MT90826AG MT90826AL ST013 IF-312
Contextual Info: MT90826 Quad Digital Switch Advanced Information Features • • • • • • • • • • • • DS5197 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mb/s Per-channel variable or constant throughput delay Accept ST-BUS streams of 2.048Mb/s,

Contextual Info: MT90826 Quad Digital Switch Features • • • • • • • • • • • • • DS5197 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mb/s Per-channel variable or constant throughput delay Accept ST-BUS streams of 2.048Mb/s, 4.096Mb/s, 8.192Mb/s, or 16.384 Mb/s

s276

Abstract: fr9110 PLIC 9110
Contextual Info: & IRFU9110, IRFR9110 M A « 3.1 A, 100V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D e ce m b e r 1995 Features Packaging JEDEC T O -251A A • 3.1 A, 100V • r DS ON = 1 -200i i • Temperature Compensating PSPICE Model DRAIN (FLANGE)

IF9120

Abstract: IRFR9120 irfu9120 IRFR91209A TB334 4411E
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs January 2002 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

IF33

Abstract: if141 IF63 IF192 if91 IF302 IF303 IF311 IF283 IF281
Contextual Info: MT90826 Quad Digital Switch Data Sheet Features • • • • • • • • • • • • • December 2002 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384 Mb/s Per-channel variable or constant throughput delay Accept ST-BUS streams of 2.048Mb/s,

IF201

Abstract: if-201
Contextual Info: MT90826 Quad Digital Switch Data Sheet Features • • • • • • • • • • • • • May 2003 4,096 x 4,096 channel non-blocking switching at 8.192 or 16.384Mbps Per-channel variable or constant throughput delay Accepts 32 ST-BUS streams of 2.048Mbps,

STIO21

Contextual Info: MT90863 3V Rate Conversion Digital Switch Advance Information Features • • • • • • • • • • • • • • DS5034 2,048 x 512 and 512 x 512 switching among backplane and local streams Rate conversion between 2.048, 4.096 and 8.192Mb/s

irfu9220

Abstract: irfu9110 la 4001 IRFR9110 IRFR91109A TA17541 TB334
Contextual Info: IRFR9110, IRFU9110 Data Sheet 3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. These are P-Channel enhancement mode silicon gate power

4411E

Abstract: IF9120
Contextual Info: IRFR9120, IRFU9120 Data Sheet 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs July 1999 3987.4 Features • 5.6A, 100V These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are

IF9120

Contextual Info: IRFR9120, IRFU9120 H A R R IS X Semiconductor 5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs September 1998 Description Features 5.6 A, 100 V These are advanced power MOSFETs designed, tested, and guaranteed to withstand a specific level of energy in the ava­

Contextual Info: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware µPD70F3187 Document No. U16580EE2V0UD00 Date Published June 2006 NEC Electronics Corporation 2006 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN

MT90863

Abstract: MT90863AG1 MT90863AL1 BMS200
Contextual Info: MT90863 3V Rate Conversion Digital Switch Advance Information Features • • • • • • • • • • • • • • DS5034 2,048 x 512 and 512 x 512 switching among backplane and local streams Rate conversion between 2.048, 4.096 and 8.192Mb/s

MT90863

Abstract: MT90863AG MT90863AL DLE11 if141
Contextual Info: MT90863 3V Rate Conversion Digital Switch Data Sheet Features • • • • • • • • • • • • • • February 2003 2,048 x 512 and 512 x 512 switching among backplane and local streams Rate conversion between 2.048, 4.096 and 8.192Mb/s Optional sub-rate switch configuration for