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HARTING Technology Group IFR320 Electronic Component
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IFR320 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IFU320 Abstract: ifr320 fu320 Contextual Info: IRFR320, IR FU320 S e m iconductor Data Sheet 3.1 A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	IRFR320, FU320 IRFU320 IFU320 ifr320 fu320	PDF
ifu320 Abstract: ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 IRFR320 IRFR3209A TA17404 TB334	PDF
ifu320 Abstract: ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifu320 ifr320 irfu320 TB334 IRFR320 IRFR3209A TA17404	PDF
IFR320 Contextual Info: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF320, IRF321, IRF322, IRF323 RF322, IFR320	PDF
ifr320 Contextual Info: IRF320, IRF321 IRF322, IRF323 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	Original	IRF320, IRF321 IRF322, IRF323 TA17404. ifr320	PDF
IFR320 Abstract: IRF322 IRF320 Contextual Info: IRF320, IRF321 IRF322, IRF323 HARRIS S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V • High Input Im pedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRF320, IRF321 IRF322, IRF323 TA17404. IRF321, RF322, IFR320 IRF322 IRF320	PDF
ifr320 Abstract: IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202 Contextual Info: IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRF320, IRF321, IRF322, IRF323 ifr320 IRF320 IRF322 TB334 IRF321 IRF323 TA17404 irf3202	PDF
ifu320 Abstract: IFR321 ifr320 IRFU320 Contextual Info: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 H A R R IS SEMICONDUCTOR 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1 A, 350V and 400V These are N-Channel enhancement mode silicon gate	OCR Scan	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 ifu320 IFR321 ifr320 IRFU320	PDF
Contextual Info: P *3 3 S IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 2.6A and 3.1 A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 2.6A and 3.1 A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 RFR322,	PDF
ifr320 Abstract: ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334 Contextual Info: IRFR320, IRFU320 Data Sheet 3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	IRFR320, IRFU320 TA17404. ifr320 ifu320 irfu320 IRFR320 IRFR3209A TA17404 TB334	PDF
ifu320 Abstract: IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320 Contextual Info: IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 S E M I C O N D U C T O R 2.6A and 3.1A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.6A and 3.1A, 350V and 400V These are N-Channel enhancement mode silicon gate	Original	IRFR320, IRFR321, IRFR322, IRFU320, IRFU321, IRFU322 TA17404. ifu320 IFR321 ifr320 IRFR322 IFU321 IRFU322 IRFR320 IRFR321 IFR322 irfu320	PDF