223FL7T2 Search Results

EVK31-050

Abstract: EVL31-050 EVM31-050 EVF31T-050A EVK71-050 etk85-050 EV1234M EVG31-050 ET1266M ETL81-050
Contextual Info: 2 2 3 8 7 9 2 C O LLM E R SEM ICO N D UCTO R IN C From ¡=UJT1 vüEK SfpE- 74 74C 0 0 7 4 8 D Ty D E | 223fl7T2 0 0 0 0 7 4 6 3 | The Leader in Power Transistor Technology ?3 ^7 f* mm* WÉ tÈÊÊÏÊ, • 200 A and 300 A Thesè 1200V {V0Ex <SUS } Darlington Powfcr

transistor darlington package to.3

Abstract: 2SC2625 I251 2SC2246 fl251 2sd920 2SC2243 sewing motor 2sd930 2SC2542
Contextual Info: “C D L L M E R S E M I C 0 N í üC T 0 R INC 74 DfT|223fl7T2 D 0 D G h 3 7 S Katings and Specifications 2238792 C O L L M E R S E M IC O N D U C T O R 74C 00637 IN C V ~ CÛiüMR SEMICOMOUCTÜ 14368 PROTON ROAD DALLAS, TEXAS 7S244 USMUWl 214-233-1589 High speed switching transistors

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

IG8T

Abstract: WE VQE 11 E Z4020 FUJI ELECTRIC CO.,LTD
Contextual Info: Ratings and characteristics of Fuji IGBT 1 IVI B M 5 1 1. Out Iine Drawing 6 2. Equivalent circuit C :Co Ilector r.ONNFCTION © CATE © COLLECTOR © EMITTER 3 @ < > 3. Absolute maximum ratings C Tc=25°C Symbo1s 1terns Ratings Units Col lector-Einitter Voltage

2SK897-M

Abstract: 897m 2sk897
Contextual Info: 2 S K 8 9 7 -M S IP M O S FU JI P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET • Features ■ Outline Drawings • High speed sw itching • Low on-resistance • No secondary breakdow n • Low driving p o w er • High voltage ■A pplications

diode mark L2

Abstract: ERA83-004
Contextual Info: ERA83-004 1A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f Color code ; W hite • Ultra small package, possible for 5mm V pitch automatic insertion V o lta g e class • Super high speed switching • High reliability by planer design

cnc schematic

Abstract: A2214 3D7D 82307 SC 2630 2SK1505-M
Contextual Info: 2SK1505-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High cu rren t • Low on-resistance • N o secondary breakdow n • Low driving p o w er • High fo rw a rd T ran scon d u ctan ce

D83M-004

Abstract: d83m d83m004 tfk 545 d83m00 g30a ESAD83M-004 VM48 TFK 102
Contextual Info: E S A D 8 3 M -0 0 4 3 oa ê±/j Outline Drawings SCHOTTKY BARRIER DIODE : Features Insulated package by fully m o ld in g . • teVF m m m & fa Connection Diagram Low V F S up er h ig h speed s w itc h in g . High reliability by planer design . : A pplications

SM 91A

Contextual Info: SPECIFICATION SILICON DIODE TYPE NAME : E RW O 4 - 0 6 0 SPEC. No. DATE : F u j i E l e c t r i c Co., Ltd. This Sp ecification is subject to change without notice. DATE NAME APPROVED DRAWN Fuji Electric Co^Lici. CHECKED 1/6 Y 0257-R-004a 22307^2 DDDSTbû 5T7

Contextual Info: S P E C 1 F 1 CAT 1 0 N DEVICE NAME 1G B T TYPE NAME 1M B 0 8 - 1 2 0 SPEC. No. M S 5 F 3 5 2 8 DATE_ :_ Jun.-25-1996 F u j i E l e c t r i c Co., Ltd. This S p e c ific a tio n is subject to change without notice, DATE NAME APPROVED Fuji Electric C o ^ U d .

1004P

Abstract: KBPC10005P KBPC1010P
Contextual Info: KBPC10005P Thru KBPC1010P 10 AM P SILICO N BR ID G E REC TIFIER • FE A TU R ES • • • • Rating to 1000V PRV Ideal for printed circuit board Surge overload rating to 150 Amperes peak Reliable low cost construction utilizing molded plastic technique results in inexpensive product

20kv diode

Abstract: ESJA53-20A HIGH VOLTAGE DIODE 20kv L#IF4
Contextual Info: 1, SCOPE This specification provide the ratings and the requirements for high voltage si Iicon diode ESJA53-20A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

F3525

Abstract: D4270 FUJI IGBT
Contextual Info: SPEC I F I CATION DEVICE NAME :_I G B T IYPE NAME :_1 M B C 0 3 - 1 ? 1 SgEC- No._ ;_M S 5 F 3 5 2 5 PATE_ :_ Jun. -25-199fi F uj i Juh CHECKED - 3 $ NAME -'% APPROVED F u ji E le c tr ic Cc4_t<± (T. '[«fc-AOUfcll V

6MBI50FA-060

Abstract: M603 6MBI50FA060
Contextual Info: 6MBI50FA-060 Fuji Pow er Module 50A IGBT MODULE ( F series) • Features • Low Saturation Voltage • Voltage Drive • All Screw Terminals for Automated Assembly ■ A p p lications • In v erte r fo r M o to r Drive • AC and DC Servo D rive A m p lifie r

fuji ipm

Abstract: ipm application note fuji 6MBP30RH060 fuji capacitor ipm application fuji 30a GDGS532 A05 zener fin heat sink igbt fuji igbt transistor modules fuji transistor modules
Contextual Info: Thla matarla! and ha Information haraln I» lha preparly of Fuji Glaatrlc Co,Lid. Thay ahailba nalthar reproduced, ooplad, lant, or disclosed In any way whatsoever for tha vie of any third party nor uaad for tha manufacturing purpose* w ithout tha expre»» written oonaant of Fuji EiectrlQ Co,Ltd.

welding machines schematics

Abstract: M604 IC151 VCE-600V
Contextual Info: fMüßDe 6-Pack IGBT 600 V 15 A 6 M B Ì f 5 fM W Ô IGBT MODULE F series Outline Drawings • F e a tu re s • Low S a tu ratio n V oltage • Voltage Drive • V a rie ty o f P ow er Capacity Series ■ A p p lic a tio n s • Inverter fo r M otor Drive

ERB83-004

Abstract: h03 diode
Contextual Info: E R B 8 3 - 0 4 i 7 A 4 "%— K v 'a y h ^ — : Outline Drawings SCHOTTKY BARRIER DIODE 5.0 : Features • vF Low V I M arking f * 5 - 3 —K : W Color code : ^ Super high speed sw itching. High reliability by planer design. A b rid g e d ty p e name

IG8T

Abstract: 54B diode
Contextual Info: 6-Pack IGBT 1200 V 8A FUJI IGBT MODULE L series O utline D raw ings • Features 2-<6f5.4 • High Speed S w itch in g • Low Saturation Voltage • Voltage Drive ■ A p plica tio n s i mi m in « > [. i • Inverter for Motor Drive e k • AC and DC S ervo Drive A m p lifie r

Contextual Info: S P E C DEVICE NAME I F I C A T I O N :_ | G B T TYPE NAME 1 M B C 1 0 - 0 6 0 SPEC. No. M S : DATE 5 F 3 5 1 9 Jun.-25-1996 F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE D RA W N CHECKED -35 NAME APPROVED

HIGH VOLTAGE DIODE kv

Abstract: ESJA54-08A 1d0c esJA54
Contextual Info: DATE NAME CHECKED OWG.NO. ThU Mild lh« nlotmalkon liar tin I* Hie |»r«|>efly c l Fuji Eleelrle C o.,lid. Thay «itali bn n«lll«*r reproduced. cuplet , te n l, or dlscloaetf In any way whulanavar lor Ihn ni« of nny Uürd party nor ui«d lor Ih» mftfUifftCtuHr»(| purpo»«i wllh<ml